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Zhenlin Pei

Publications and source records attributed to Zhenlin Pei.

2 recordsLinked to original sources

SPORT: Spherical-PSNR-Optimized tRuncaTion for Power-Efficient 360-Degree Video Systems

Memory bandwidth accounts for 30-40% of total power consumption in standalone virtual reality (VR) headsets, yet existing systems typically store the entire 360-degree frame at a uniform resolution regardless of viewer gaze. This paper presents SPORT (Spherical-PSNR Optimized tRuncaTion), a bit-truncation framework that reduces display-path memory power by storing only the most significant bits of pixels outside the user's field of view (FoV). Specifically, a new bit-truncation framework is developed to use weighted-to-spherically-uniform PSNR (WS-PSNR) directly in the optimization constraint, eliminating the metric inconsistency that arises when standard PSNR is used for a WS-PSNR quality target. Also, gaze-predictive tile classification compensates for the 9.33 ms end-to-end pipeline latency, reducing boundary misclassifications by 5.2 percentage points at a cost of only 0.01 ms. In addition, the developed SPORT-B variant, which keeps the FoV lossless, achieves 47.9% memory power saving and 47.9% bandwidth reduction across different 4K video sequences while satisfying all three per-region WS-PSNR thresholds and maintaining SSIM = 1.000 in the attended region. The full adaptive variant SPORT-A reaches 51.6% power saving, 3.1percentage points more than a PSNR-based optimizer at equal measured quality. SPORT is validated on the TrunMEM360 flexible SRAM Application-Specific Integrated Circuit (ASIC) fabricated in SkyWater 130 nm CMOS, confirming byte-exact silicon-software agreement, with WS-PSNR and SSIM matching within 0.1 dB and 0.001. CACTI-based analysis confirms 48.72% DRAM leakage reduction and 36.4%/36.7% read/write energy reduction. The total motion-to-photon latency of 9.33 ms satisfies the 20 ms VR comfort budget with a 53.3% safety margin.

cs.AR

Sneak Path Current Modeling in Memristor Crossbar Arrays for Analog In-Memory Computing

Memristor crossbar arrays have emerged as a key component for next-generation non-volatile memories, artificial neural networks, and analog in-memory computing (IMC) systems. By minimizing data transfer between the processor and memory, they offer substantial energy savings. However, a major design challenge in memristor crossbar arrays is the presence of sneak path currents, which degrade electrical performance, reduce noise margins, and limit reliable operations. This work presents a closed-form analytical framework based on 1.4nm technology for accurately estimating sneak path currents in memristor crossbar arrays. The proposed model captures the interdependence of key design parameters in memristor crossbar arrays, including array size, ON/OFF ratio of memristors, read voltage, and interconnect conditions, through mathematically derived relationships. It supports various practical configurations, such as different data patterns and connection strategies, enabling rapid and comprehensive sneak path current modeling. The sensitivity analysis includes how design parameters influence sneak path current and noise margin loss, underscoring the trade-offs involved in scaling crossbar arrays. Validation through SPICE simulations shows that the model achieves an error of less than 10.9% while being up to 4784 times faster than full circuit simulations. This analytical framework offers a powerful tool for quantitative assessment and pre-design/real-time optimization of memristor-based analog in-memory computing (IMC) architectures.

cs.ET