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Zhenqi Hua

Publications and source records attributed to Zhenqi Hua.

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Competing Chern states revealed by quasiparticle charging in moiré rhombohedral graphene

Moiré materials realize a versatile platform for exploring the physics of fractional Chern insulators (FCIs). The recently observed evolution from FCIs to an extended quantum anomalous Hall background upon lowering the electronic temperature in moiré rhombohedral graphene (mRG)8 raises a fundamental question: Is it caused by a failure to equilibrate the edge states of an FCI or by a genuine phase transition in the bulk from an FCI to a generalized anomalous Hall crystal? Here we address this question by probing quasiparticle charging in a mesoscopic mRG antidot device and by bulk resistance measurements, both of which are bulk-sensitive and free from complications from edge states. Tunneling to the mRG antidot reveals quasiparticles carrying one electron charge for both Chern states at filling factors ν=1 and 2/3 at low temperatures. Temperature dependence measurements of the bulk resistance near ν=2/3 further suggest a thermodynamic phase transition from an FCI to a generalized anomalous Hall crystal at temperatures below about 150mK. The results clearly exclude the edge state equilibration scenario and favor the phase transition scenario. Our work establishes mesoscopic probes as a powerful approach to uncover competing ground states in moiré materials and provides a basis for probing fractionalized excitations in FCIs.

cond-mat.mes-hall

Multi-Knob Switchable Chiral Superconductivity Quartet in Rhombohedral Graphene

Chiral superconductors break orbital time-reversal symmetry and may host topological quasiparticles with non-Abelian statistics. In rhombohedral graphene, superconductivity develops from a spin-valley-polarized quarter-metal (QM) parent state and features unique magnetic hysteresis of resistance that indicates orbital time-reversal-symmetry-breaking. Exploring and controlling the full spin-valley flavors of such superconductivity could enable novel superconducting and topological devices, but have remained unexplored. Here we report transport measurements on rhombohedral hexalayer graphene (R6G), which reveal a new superconducting state (SCH) that is induced by an out-of-plane magnetic field, in addition to chiral superconductivity (CSC) similar to those observed in thinner layers. This SCH state emerges above 0.8 T, persists up to 1.6 T and can be switched on/off by magnetic field $H_\perp$, carrier density $n$, and gate displacement field $D$. Quantum oscillations and anomalous Hall measurements show that SCH stems from a field-induced quarter-metal (QM$'$) parent phase, which carries orbital magnetization opposite to that of the zero-field QM. Across the full $(n, D, H_\perp)$ parameter space, superconductivity can be realized from all four spin-valley isospin flavors, establishing a switchable chiral-superconductor quartet in R6G. We interpret the parent-state switching as arising from competition between a Kane-Mele-like spin-valley splitting and magnetic-field coupling to spin-valley-dependent magnetic moments. Our work establishes rhombohedral graphene as a multi-knob platform for different isospin-polarized superconductivities, which enables programmable superconducting networks with possible Majorana modes along domain walls.

cond-mat.supr-con

Evidence of Metallic Wigner Crystal in Rhombohedral Graphene

When the Coulomb interaction dominates over kinetic energy, electrons can crystallize into a Wigner crystal (WC). This paradigmatic correlated electronic phase has been realized in two-dimensional electron gases with parabolic band dispersion and completely flat Landau levels under high magnetic fields. Beyond these conventional contexts of electron crystallization, more exotic electron crystals have been postulated but remain unexplored. For example, a metallic Wigner crystal (mWC), in which itinerant carriers coexist with a pinned electron lattice, has been proposed theoretically but considered difficult to realize. Non-parabolic electron bands and quantum geometry may facilitate mWC and other novel topological electron crystals. Here we report transport evidence for WC and mWC in rhombohedral tetra-, penta-, and hexalayer graphene in the charge density range 0.3-0.5x10^12 cm^-2. By flattening the conduction band with a gate-controlled displacement field D, we observe an insulating state at nonzero charge density that shows nonlinear, hysteretic current-voltage relations, signatures of a pinned WC, that are absent from the lower-density insulator. Further increasing D reveals transport dominated by hole-like carriers with density up to only 15% of the nominal electron density, consistent with mWC. This mWC state is closely tied to the WC state, as both collapse simultaneously with increasing temperature or bias voltage. The mWC state shows quantum Hall onset near 0.4 T and disobeys the Streda relation, indicating compressible charge exchange between itinerant holes and the transport-inert WC background. Our results establish rhombohedral graphene as a platform for exploring novel electron crystals, as well as possible nontrivial topology, and new collective modes.

cond-mat.mes-hall

Tunable interplay of orbital and spin magnetization in trigonal tellurium

Orbital effects, despite their fundamental significance and potential to engender novel physical phenomena and enable new applications, have long been underexplored compared to their spin counterparts. Recently, surging interest in the orbital degree of freedom has led to the discovery of a plethora of orbital-related effects, underscoring the need for a deeper understanding of their roles in quantum materials. Here, we report systematic experimental evidence consistent with orbital magnetization and spontaneous rotational symmetry breaking in trigonal Tellurium, an elemental semiconductor with a unique helical crystal structure that serves as a natural platform for investigating orbital effects. Detailed angular dependent linear and nonlinear magnetotransport measurements, supported by symmetry-guided Boltzmann transport analysis, support the interpretation of coexistence of current-induced spin polarization and orbital magnetization. With the goal of disentangling the interplay between spin and orbital degrees of freedom through electrostatic gating, this work establishes a general framework for understanding orbital magnetization in chiral crystals and beyond, paving the way for its utilization in orbitronics and spintronics.

cond-mat.mtrl-sci

Realizing a topological diode effect on the surface of a topological Kondo insulator

Introducing the concept of topology into material science has sparked a revolution from classic electronic and optoelectronic devices to topological quantum devices. The latter has potential for transferring energy and information with unprecedented efficiency. Here, we demonstrate a topological diode effect on the surface of a three-dimensional material, SmB6, a candidate topological Kondo insulator. The diode effect is evidenced by pronounced rectification and photogalvanic effects under electromagnetic modulation and radiation at radio frequency. Our experimental results and modeling suggest that these prominent effects are intimately tied to the spatially inhomogeneous formation of topological surface states (TSS) at the intermediate temperature. This work provides a manner of breaking the mirror symmetry (in addition to the inversion symmetry), resulting in the formation of pn-junctions between puddles of metallic TSS. This effect paves the way for efficient current rectifiers or energy-harvesting devices working down to radio frequency range at low temperature, which could be extended to high temperatures using other topological insulators with large bulk gap.

cond-mat.str-el

Signatures of Chiral Superconductivity in Rhombohedral Graphene

Chiral superconductors are unconventional superconducting states that break time reversal symmetry spontaneously and typically feature Cooper pairing at non-zero angular momentum. Such states may host Majorana fermions and provide an important platform for topological physics research and fault-tolerant quantum computing. Despite intensive search and prolonged studies of several candidate systems, chiral superconductivity has remained elusive so far. Here we report the discovery of robust unconventional superconductivity in rhombohedral tetra- and penta-layer graphene in the absence of moiré superlattice effects. We observed two superconducting states in the gate-induced flat conduction bands with Tc up to 300 mK and charge density ne as low as 2.4*1011 cm-2 in three tetralayer and two pentalayer devices. Spontaneous time-reversal-symmetry-breaking (TRSB) due to electron's orbital motion is found, and several observations indicate the chiral nature of these superconducting states, including: 1. In the superconducting state, Rxx shows magnetic hysteresis in varying out-of-plane magnetic field B, which is absent from all other superconductors; 2. the superconducting states are immune to in-plane magnetic field and are developed within a spin- and valley-polarized quarter-metal phase; 3. the normal states show anomalous Hall signals at zero magnetic field and magnetic hysteresis. We also observed a critical B of up to 1.4 Tesla, higher than any graphene superconductivity reported so far and indicates a strong-coupling superconductivity close to the BCS-BEC crossover. Our observations establish a pure carbon material for the study of topological superconductivity, and pave the way to explore Majorana modes and topological quantum computing.

cond-mat.mes-hall

Chirality-Induced Magnet-Free Spin Generation in a Semiconductor

Electrical generation and transduction of polarized electron spins in semiconductors are of central interest in spintronics and quantum information science. While spin generation in semiconductors has been frequently realized via electrical injection from a ferromagnet, there are significant advantages in nonmagnetic pathways of creating spin polarization. One such pathway exploits the interplay of electron spin with chirality in electronic structures or real space. Here, utilizing chirality-induced spin selectivity (CISS), we demonstrate efficient creation of spin accumulation in n-doped GaAs via electric current injection from a normal metal (Au) electrode through a self-assembled monolayer of chiral molecules (α-helix L-polyalanine, AHPA-L). The resulting spin polarization is detected as a Hanle effect in the n-GaAs, which is found to obey a distinct universal scaling with temperature and bias current consistent with chirality-induced spin accumulation. The experiment constitutes a definitive observation of CISS in a fully nonmagnetic device structure and demonstration of its ability to generate spin accumulation in a conventional semiconductor. The results thus place key constraints on the physical mechanism of CISS and present a new scheme for magnet-free semiconductor spintronics.

cond-mat.mes-hall

Intrinsic ion migration dynamics in a one-dimensional organic metal halide hybrid

Metal halide perovskites possess many physical properties amenable to optoelectronic applications, whereas the realization of these potentials has been hampered by their environmental and electronic instabilities. The morphological and molecular low dimensional perovskites and perovskite related materials have shown much promise in enhancing the chemical stability due to their unique molecular structures. Here we report on robust and reproducible four-terminal (4T) electrical measurements in a one-dimensional (1D) organic metal halide hybrid, (R)-α-methylbenzylammonium lead triiodide ((R-α-MBA)PbI3) made possible by its chemical stability. The results reveal a distinct intrinsic ion migration dynamic of single exponential, which underlies the unique 4T I-V characteristics. The dynamic is directly verified by real-time measurements of the transient ionic current. Our observations are consistent with photo-activation and field-assisted ion migration. The elucidated intrinsic ion dynamics may provide the physical basis for understanding and modelling the ubiquitous hysteresis in metal halides based electronic devices and new insights into the dynamics of ion migration in metal halide perovskites and hybrids in general.

physics.app-ph

Interplay of Structural Chirality, Electron Spin and Topological Orbital in Chiral Molecular Spin Valves

Chirality has been a property of central importance in chemistry and biology for more than a century, and is now taking on increasing relevance in condensed matter physics. Recently, electrons were found to become spin polarized after transmitting through chiral molecules, crystals, and their hybrids. This phenomenon, called chirality-induced spin selectivity (CISS), presents broad application potentials and far-reaching fundamental implications involving intricate interplays among structural chirality, topological states, and electronic spin and orbitals. However, the microscopic picture of how chiral geometry influences electronic spin remains elusive. In this work, via a direct comparison of magnetoconductance (MC) measurements on magnetic semiconductor-based chiral molecular spin valves with normal metal electrodes of contrasting strengths of spin-orbit coupling (SOC), we unambiguously identified the origin of the SOC, a necessity for the CISS effect, given the negligible SOC in organic molecules. The experiments revealed that a heavy-metal electrode provides SOC to convert the orbital polarization induced by the chiral molecular structure to spin polarization. Our results evidence the essential role of SOC in the metal electrode for engendering the CISS spin valve effect. A tunneling model with a magnetochiral modulation of the potential barrier is shown to quantitatively account for the unusual transport behavior. This work hence produces critical new insights on the microscopic mechanism of CISS, and more broadly, reveals a fundamental relation between structure chirality, electron spin, and orbital.

cond-mat.mtrl-sci