arXiv subjects

Zhenqiang Ma

Publications and source records attributed to Zhenqiang Ma.

25 records · Page 2Linked to original sources

arXiv2018

Lattice-mismatched semiconductor heterostructures

Semiconductor heterostructure is a critical building block for modern semiconductor devices. However, forming semiconductor heterostructures of lattice-mismatch has been a great challenge for several decades. Epitaxial growth is infeasible to form abrupt heterostructures with large lattice-mismatch while mechanical-thermal bonding results in a high density of interface defects and therefore severely limits device applications. Here we show an ultra-thin oxide-interfaced approach for the successful formation of lattice-mismatched semiconductor heterostructures. Following the depiction of a theory on the role of interface oxide in forming the heterostructures, we describe experimental demonstrations of Ge/Si (diamond lattices), Si/GaAs (zinc blende lattice), GaAs/GaN (hexagon lattice), and Si/GaN heterostructures. Extraordinary electrical performances in terms of ideality factor, current on/off ratio, and reverse breakdown voltage are measured from p-n diodes fabricated from the four types of heterostructures, significantly outperforming diodes derived from other methods. Our demonstrations indicate the versatility of the ultra-thin-oxide-interface approach in forming lattice-mismatched heterostructures, open up a much larger possibility for material combinations for heterostructures, and pave the way toward broader applications in electronic and optoelectronic realms.

physics.app-ph↗

arXiv2018

Accelerating vapor condensation with daytime radiative cooling

Vapor condensation plays a crucial role in solar water-purification technologies. Conventional condensers in solar water-purification systems do not provide sufficient cooling power for vapor condensation, limiting the water production rate to $0.4 L m^{-2} hour^{-1}$. On the other hand, radiative dew condensation, a technique used by existing radiative dew condensers, only works at nighttime and is incompatible with solar water-purification technologies. Here, we develop daytime radiative condensers that reflect almost all solar radiation, and can thus create dew water even in direct sunlight. Compared to state-of-art condensers, our daytime radiative condenser doubles the production of purified water over a 24-hour period. The integration of our daytime radiative condenser with solar water-purification systems can increase the water production rate in sunlight from $0.4 L m^{-2} hour^{-1}$ to more than $1 L m^{-2} hour^{-1}$.

physics.app-ph↗

arXiv2017

229 nm UV LEDs using p-type silicon for increased hole injection

Ultraviolet (UV) light emission at 229 nm wavelength from diode structures based on AlN/Al0.77Ga0.23N quantum wells and using p-type Si to significantly increase hole injection was reported. Both electrical and optical characteristics were measured. Owing to the large concentration of holes from p-Si and efficient hole injection, no efficiency droop was observed up to a current density of 76 A/cm2 under continuous wave operation and without external thermal management. An optical output power of 160 uW was obtained with corresponding external quantum efficiency of 0.027%. This study demonstrates that by adopting p-type Si nanomembrane contacts as hole injector, practical levels of hole injection can be realized in UV light-emitting diodes with very high Al composition AlGaN quantum wells, enabling emission wavelengths and power levels that were previously inaccessible using traditional p-i-n structures with poor hole injection efficiency.

physics.app-ph↗

arXiv2017

UVC LEDs on Bulk AlN Substrates Using Silicon Nanomembranes for Efficient Hole Injection

As UV LEDs are explored at shorter wavelengths (< 280 nm) into the UVC spectral range, the crystalline quality of epitaxial AlGaN films with high Al compositions and inefficient hole injection from p-type AlGaN severely limit the LED performance and development. In this work, we report on 237 nm light emission with a record light output power of 265 uW from AlN/Al0.72Ga028N multiple quantum well UVC LEDs using bulk AlN substrates and p-type silicon nanomembrane contact layers for significantly improved AlGaN film quality and hole injection, respectively. No intensity degradation or efficiency droop was observed up to a current density of 245 A/cm2, which is attributed to the low dislocation density within AlGaN films, the large concentration of holes from p-Si, and efficient hole-transport to the active region. Additionally, the emission peak at 237 nm is dominant across the electroluminescence spectrum with no significant parasitic emissions observed. This study demonstrates the feasibility of using p-Si as a hole injector for UVC LEDs, which can be extended to even shorter wavelengths where hole injection from chemically doped AlGaN layers is not feasible.

physics.app-ph↗

arXiv2016

Thermal Diffusion Boron Doping of Single-Crystal Diamond

With the best overall electronic and thermal properties, single crystal diamond (SCD) is the extreme wide bandgap material that is expected to revolutionize power electronics and radio-frequency electronics in the future. However, turning SCD into useful semiconductors requires overcoming doping challenges, as conventional substitutional doping techniques, such as thermal diffusion and ion implantation, are not easily applicable to SCD. Here we report a simple and easily accessible doping strategy demonstrating that electrically activated, substitutional doping in SCD without inducing graphitization transition or lattice damage can be readily realized with thermal diffusion at relatively low temperatures by using heavily doped Si nanomembranes as a unique dopant carrying medium. Atomistic simulations elucidate a vacancy exchange boron doping mechanism that occur at the bonded interface between Si and diamond. We further demonstrate selectively doped high voltage diodes and half-wave rectifier circuits using such doped SCD. Our new doping strategy has established a reachable path toward using SCDs for future high voltage power conversion systems and for other novel diamond based electronic devices. The novel doping mechanism may find its critical use in other wide bandgap semiconductors.

cond-mat.mtrl-sci↗

arXiv2015

Thermal Diffusion Doping of Single Crystal Diamond

With the best overall electronic and thermal properties, single-crystal diamond (SCD) is the extreme wide bandgap material that is expected to revolutionize power electronics and radio-frequency electronics in the future. However, turning SCD into useful semiconductors faces doping challenges, as conventional substitutional doping techniques, such as thermal diffusion and ion-implantation, are not easily applicable to SCD. Here we report a simple and easily accessible doping strategy demonstrating that electrically activated, substitutional boron doping in natural SCD without any phase transitions or lattice damage which can be readily realized with thermal diffusion at relatively low temperature. For the boron doping, we employ a unique dopant carrying medium: heavily doped Si nanomembranes. We further demonstrate selectively doped high-voltage diodes and half-wave rectifier circuits using such doped SCD. Our new doping strategy has established a reachable path toward using SCDs for future high-voltage power conversion systems and for other novel diamond-based electronics.

cond-mat.mes-hall↗

arXiv2014

Nanopatterning by Laser Interference Lithography: Applications to Optical Devices

A systematic review, covering fabrication of nanoscale patterns by laser interference lithography (LIL) and their applications for optical devices are provided. LIL is a patterning method with simple, quick process over a large area without using a mask. LIL is a powerful technique for the definition of large-area, nanometer-scale, periodically patterned structures. Patterns are recorded in a light-sensitive medium that responds nonlinearly to the intensity distribution associated with the interference of two or more coherent beams of light. The photoresist patterns produced with LIL are the platform for further fabrication of nanostructures and growth of functional materials which are the building blocks for devices. Demonstration of optical and photonic devices by LIL is reviewed such as directed nano photonics and surface plasmon resonance (SPR) or large area membrane reflectors and anti-reflectors. Perspective on future directions for LIL and emerging applications in other fields are presented.

cond-mat.mes-hall↗