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Zhenyang Zhong

Publications and source records attributed to Zhenyang Zhong.

2 recordsLinked to original sources

High-Order Regularity and a Fully Discrete Fourier Spectral Method for a Partially Dissipative Viscoelastic Timoshenko System with Memory

This paper investigates a class of partially dissipative viscoelastic Timoshenko systems with memory, where dissipation is induced by a Volterra-type memory term acting only on the shear variable. The well-posedness of weak and strong solutions is established on finite time intervals, including existence, uniqueness, stability, and higher-order regularity under compatibility conditions consistent with mixed boundary conditions. For the numerical approximation, a Fourier spectral fully discrete scheme is constructed: sine and cosine basis expansions are used in space for unknowns satisfying Dirichlet and Neumann boundary conditions, respectively; in time, a central difference scheme is applied to the second-order derivatives, and the composite trapezoidal rule is used to approximate the memory convolution term. Based on a discrete energy method, the positivity of the constructed discrete energy is proved, and the error estimate for the fully discrete scheme with second-order convergence in time and \(q\)-th order in space is established for any q \in \mathbb{N}. Numerical experiments are given to verify the theoretical convergence rates and to compare the dynamic responses of the local and nonlocal models, demonstrating that the memory term effectively captures energy dissipation and vibration attenuation behavior in viscoelastic materials.

math.NA

Positioning of self-assembled Ge islands on stripe-patterned Si (001) substrates

Self-assembled Ge islands were grown on stripe-patterned Si (001) substrates by solid source molecular beam epitaxy. The surface morphology obtained by atomic force microscopy (AFM) and cross-sectional transmission electron microscopy images (TEM) shows that the Ge islands are preferentially grown at the sidewalls of pure Si stripes along [-110] direction at 650o C or along the trenches, whereas most of the Ge islands are formed on the top terrace when the patterned stripes are covered by a strained GeSi buffer layer. Reducing the growth temperature to 600oC results in a nucleation of Ge islands both on the top terrace and at the sidewall of pure Si stripes. A qualitative analysis, based on the growth kinetics, demonstrates that the step structure of the stripes, the external strain field and the local critical wetting layer thickness for the islands formation contribute to the preferential positioning of Ge islands on the stripes.

cond-mat.mtrl-sci