Monolithic integration of diverse crystalline thin films on diamond for near-junction thermal management
The pursuit of extreme miniaturization and high power in 6G RF front-ends has cast thermal dissipation as the central challenge. Here, we have demonstrated the monolithic integration of functionally distinct single-crystal thin films, including \b{eta}-Ga2O3, Si, GaN, and LiTaO3, onto a single diamond substrate using a multi-step transfer printing technique. Focusing on the critical \b{eta}-Ga2O3/diamond interface, we achieve an exceptional interfacial thermal conductance (ITC) of 149 MW m-2 K-1 through ultra-high vacuum (UHV) annealing, creating an atomically sharp interface featuring covalent bonding. Vibrational electron energy-loss spectroscopy (EELS) analysis combining with molecular dynamics (MD) simulations reveal that distinctive interfacial phonon modes at the \b{eta}-Ga2O3/diamond heterointerface dominate ultrahigh ITC. We experimentally demonstrate that by improving the ITC, the thermal resistance (Rth) of a diamond-based \b{eta}-Ga2O3 MOSFET is driven to a record-low value of 1.58 K mm W-1, underscoring the critical role of interface engineering in near-junction thermal management for diamond-integrated devices. This work demonstrates a scalable, diamond-based monolithic integration platform designed to solve the near-junction thermal challenges in high-power RF front-ends.