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Zhenyuan Shang

Publications and source records attributed to Zhenyuan Shang.

6 recordsLinked to original sources

An ultralow-loss integrated photonic platform for discrete-variable quantum information processing

Photonic integrated circuits offer a scalable and robust route toward quantum information technologies by consolidating photon sources and linear optical networks onto compact, wafer-manufacturable chips. Although silicon photonics has enabled diverse discrete-variable quantum breakthroughs -- spanning multiphoton entanglement, quantum networking, and photonic qubit fusion for quantum computing -- scaling these platforms beyond proof-of-principle demonstrations remains severely constrained by a critical system-level bottleneck. Optical loss compounds rapidly across photon generation, routing, and state analysis, causing multiphoton generation probabilities to plummet exponentially as circuit depth and complexity grow. Here we overcome this rate-loss barrier by demonstrating a monolithic, ultralow-loss silicon nitride (Si$_3$N$_4$) integrated photonic platform engineered for high-performance discrete-variable quantum information processing. Our architecture seamlessly integrates narrowband photon-pair sources with low-loss qubit-fusion circuits and reconfigurable state-analysis interferometers. The on-chip sources prepare Einstein-Podolsky-Rosen (EPR) states with a fidelity of 0.9875(3) and exhibit near-unity photon indistinguishability, yielding a heralded Hong-Ou-Mandel interference visibility of 0.990(6). By executing on-chip fusion of two EPR states, we synthesize and characterize four-photon Greenberger-Horne-Zeilinger states with a record fidelity of 0.943(8) and a fourfold count rate of 27 Hz -- more than two orders of magnitude higher than previous silicon-photonic implementations. Combined with standard CMOS-compatible fabrication on 150-mm-diameter wafers, these results establish ultralow-loss Si$_3$N$_4$ integrated photonics as a definitive, manufacturable platform for deployable, large-scale quantum information processors.

quant-ph

Kramers-Kronig causality in integrated photonics: The spectral tension between ultraviolet transition and mid-infrared absorption

Dispersion engineering via geometric confinement is essential to integrated photonics, enabling phenomena such as soliton microcombs, supercontinua, parametric oscillators, and entangled photons. However, prevailing methodologies rely on semi-empirical Sellmeier models that assume idealized material purity, neglecting the pronounced dispersion shifts induced by residual impurities like hydrogen-related bonds. Here, we demonstrate that these residual bonds fundamentally alter the dispersion landscape spanning from the ultraviolet (UV) to the mid-infrared (MIR) spectra. Specifically, they introduce MIR vibrational absorption while simultaneously modifying UV electronic transition, shifting the bandgap and UV pole. We show that the spectral tension between these UV and MIR modifications dictates the group velocity dispersion from the visible to the near-infrared (NIR) via the Kramers-Kronig causality. We experimentally validate this phenomenon through systematic characterization of broadband loss and dispersion in ultralow-loss silicon nitride photonic integrated circuits. By rigorously incorporating these effects, we bridge the gap between empirical fitting and predictive physical modelling. Our study resolves long-standing discrepancies in dispersion engineering, providing precision control essential for next-generation integrated photonics.

physics.optics

Metrology-grade mid-infrared spectroscopy for multi-dimensional perception

The mid-infrared spectral window is essential for molecular fingerprinting and atmospheric sensing, yet unlocking its full potential is currently constrained by a fundamental instrumental trade-off: existing systems cannot simultaneously deliver broad bandwidth, high photon flux, and metrological frequency fidelity. Here, we resolve this bottleneck by demonstrating a metrology-grade spectroscopic system based on difference frequency generation, driven by widely tunable, near-infrared diode lasers traceable to atomic standards. Our system achieves continuous tunability across the 3-3.7 $μ$m atmospheric window and delivers output power exceeding 45 mW with an absolute frequency accuracy of 7.2 MHz. We harness this convergence to overcome a critical barrier in integrated photonics, unambiguously identifying and eliminating hydrogen-induced absorption in silicon nitride microresonators to achieve an 88-fold reduction in optical loss. We further reveal multi-phonon absorption in the silica cladding as the fundamental limit to mid-infrared integrated photonics. Finally, we demonstrate the system's versatility through scattering-resilient LiDAR capable of penetrating optically dense fog, and dual-modality sensing that simultaneously retrieves target distance and chemical composition. By unifying the rigor of frequency metrology with the versatility of broadband sensing, this architecture establishes a new paradigm for multi-dimensional perception in complex environments.

physics.optics

Intraresonance frequency combs in Kerr microresonators

For more than 20 years, optical microresonators have served as the backbone of integrated nonlinear photonics, exploiting Kerr nonlinearity to generate octave-spanning frequency combs, enable quantum effects, and drive optical parametric oscillators. Since the inception of microresonator-based nonlinear optics, related studies have focused primarily on regimes in which photons with distinct resonant modes can interact. Although multiple comb lines can occupy a single resonance during the Kerr comb formation process, their mutual interactions have remained largely unexplored. Here we demonstrate a Kerr comb formation that is confined to a single resonance of a microresonator via dual-pumping. MHz-scale comb-line spacing reveals previously unobserved Kerr-comb dynamics, featuring parametrically driven phase multistability that can be observed directly in the temporal domain. Two laser pumps serve as phase-coupled references for heterodyne read-out, simplifying the measurements.

physics.optics

Hybrid-integrated dark-pulse microcombs towards visible light spectrum

Leveraging hybrid integration, we demonstrate dark-pulse formation at 780-nm wavelength band in integrated Si$_3$N$_4$ microresonators driven by high-power AlGaAs-based chip-scale lasers. The device outputs coherent frequency combs with electronically detectable repetition rates down to 20 GHz, paving a route to efficient and compact atom-chip interfaces for spectroscopy, metrology and sensing.

physics.optics

Space compatibility of emerging, wide-bandgap, ultralow-loss integrated photonics

Integrated photonics has revolutionized optical communication, sensing, and computation, offering miniaturized and lightweight solutions for spacecraft with limited size and payload. Novel chip-scale instruments based on ultralow-loss integrated photonic platforms, including lasers, frequency combs and atomic traps, have been developed for space applications. Therefore, quantifying the space compatibility of ultralow-loss photonic integrated circuits (PICs), particularly their radiation resistance, is critical. This study experimentally evaluates the radiation resistance of ultralow-loss Si$_3$N$_4$, 4H-SiC, and LiNbO$_3$ PICs under intense $γ$-ray and high-energy proton irradiation. Results show that proton irradiation with $1.1 \times 10^{10}$ $\mathrm{p/cm^2}$ total flux does not significantly increase optical loss or alter the refractive index of these PICs, while $γ$-ray irradiation with 1.2 Mrad accumulated dose only marginally increases their optical loss. These findings provide preliminary evidence of the excellent space compatibility of ultralow-loss Si$_3$N$_4$, 4H-SiC, and LiNbO$_3$ PICs, highlighting their potential for compact and lightweight space systems.

physics.optics