arXiv subjects

Zhi Shiuh Lim

Publications and source records attributed to Zhi Shiuh Lim.

15 recordsLinked to original sources

arXiv2026

Cladding Layer Enhanced GHz Bulk Acoustic Wave Resonance in Sodium Niobate Thin Films on Silicon

Bulk acoustic wave resonators (BAWR) and bandpass filters operating at GHz frequency are the workhorse of (Vo-)LTE telecommunication and broadband internet. In line with the Singapore Green Plan 2030 for innovating environmentally friendly products, we fabricated lead-free BAWR with sodium niobate (NaNbO3) piezoelectric on silicon with a high electromechanical coupling factor up to 31.3% operating at ~4 GHz. We disclose our crucial strategy where the NaNbO3 layer is cladded between two thin layers of high band gap insulators, which satisfies two primary objectives, i.e. leakage current mitigation and crack avoidance. In addition, we also verified the efficacy of reducing lattice parameters of the cladding layers in promoting vertically distorted tetragonal phase NaNbO3 and producing stronger BAWR signals.

cond-mat.mtrl-sci↗

arXiv2026

Ni-O hybridization-driven electronic reconstruction across the superconducting dome in an infinite-layer nickelate

Superconductivity in infinite-layer nickelates has drawn wide interest as a cuprate analogue, yet how the electronic structure evolves with hole doping remains unsettled. Here we map the doping- and temperature-dependent unoccupied states of the La-based infinite-layer nickelate La1-xCaxNiO2 using O K-edge and Ni L-edge x-ray absorption spectroscopy. Superconductivity occurs for 0.18<=x<=0.27. Near x~0.20-0.23, low-energy spectral weight redistributes: Ni3d-dominated states decrease while O2p-hybridized states increase, indicating an orbital-selective crossover in Ni-O covalency. This crossover coincides with a sign reversal of the Hall coefficient and precedes the reduction of the superconducting critical temperature at higher doping. By directly linking transport anomalies and the superconducting dome to a measurable Ni-O orbital reorganization, our results provide a key step toward a unified, orbital-resolved phase diagram for infinite-layer nickelates and a practical route to engineer superconductivity via hybridization control.

cond-mat.supr-con↗

arXiv2026

Hole-doped superconductivity above 100 K in infinite-layer cuprate thin films

Since the discovery of superconductivity in (La,Ba)2CuO2 (Ref.~\cite{bednorz1986possible}), a broad family of structurally distinct cuprate superconductors has been proposed or engineered to elucidate the physics of high-temperature superconductivity~\cite{chu2015hole,plakida2010high}. Among them, the infinite-layer cuprate has the simplest structure, consisting only of the essential ingredients for superconductivity: CuO$_2$ square planes separated by spacer ions~\cite{siegrist1988parent}. Despite being proposed nearly 40 years ago, the hole-doped superconductivity via chemical substitution in this compound has not yet been achieved, a fundamental open question in the field. Here, we report the observation of superconductivity in the hole-doped infinite-layer cuprate thin film. Measurements of resistivity and magnetic-field response in Sr1-xRbxCuO2 single-crystal thin films show superconducting transitions with a high onset temperature of 100 K. Hole doping is achieved via the synergistic effect of rubidium substitution and apical oxygen incorporation, as evidenced by structural analysis and transport measurements. As the parent structure of the cuprate family~\cite{chu2015hole}, hole-doped infinite-layer cuprate provides a unique platform for revisiting key puzzles in cuprate superconductors~\cite{keimer2015quantum,tsuei2000pairing,armitage2010progress,dagotto1994correlated}, including strange metal~\cite{proust2019remarkable,taillefer2010scattering} and electron-hole symmetry~\cite{tohyama2004asymmetry,segawa2010zero,lee2014asymmetry}, while bridging to cuprate-nickelate symmetry~\cite{li2019superconductivity,zeng2022superconductivity,chow2025bulk,lechermann2020late}.

cond-mat.supr-con↗

arXiv2024

Room Temperature Strong Orbital Moments in Perpendicularly Magnetized Magnetic Insulator

The balance between the orbital and spin magnetic moments in a magnetic system is the heart of many intriguing phenomena. Here, we show experimental evidence of a large orbital moment, which competes with its spin counterpart in a ferrimagnetic insulator thulium iron garnet, Tm3Fe5O12. Leveraging element-specific X-ray magnetic circular dichroism (XMCD), we establish that the dominant contribution to the orbital moment originates from 4f orbitals of Tm. Besides the large Tm orbital moment, intriguingly, our results also reveal a smaller but evident non-zero XMCD signal in the O K edge, suggesting additional spin-orbit coupling and exchange interactions with the nearest neighbour Fe atoms. The unquenched orbital moment is primarily responsible for a significant reduction in g-factor, typically 2 in transition metals, as determined independently using ferromagnetic resonance spectroscopy. Our findings reveal a non-linear reduction in the g-factor from 1.7 at 300 K to 1.56 at 200 K in Tm3Fe5O12 thin films. These results provide critical insights into the role of the f orbitals in long-range magnetic order and stimulate further exploration in orbitronics.

cond-mat.mtrl-sci↗

arXiv2024

CMOS-compatible photonic integrated circuits on thin-film ScAlN

Scandium aluminum nitride (ScAlN) has recently emerged as an attractive material for integrated photonics due to its favorable nonlinear optical properties and compatibility with CMOS fabrication. Despite the promising and versatile material properties, it is still an outstanding challenge to realize low-loss photonic circuits on thin-film ScAlN-on-insulator wafers. Here, we present a systematic study on the material quality of sputtered thin-film ScAlN produced in a CMOS-compatible 200 mm line, and an optimized fabrication process to yield 400 nm thick, fully etched waveguides. With surface polishing and annealing, we achieve micro-ring resonators with an intrinsic quality factor as high as $1.47\times 10^5$, corresponding to a propagation loss of 2.4 dB/cm. These results serve as a critical step towards developing future large-scale, low-loss photonic integrated circuits based on ScAlN.

physics.optics↗

arXiv2024

On the origin of topotactic reduction effect for superconductivity in infinite-layer nickelates

Topotactic reduction utilizing metal hydrides as reagents emerges as an effective approach to achieve exceptionally low oxidization states of metal ions and unconventional coordination networks. This method opens avenues to the development of entirely new functional materials, with one notable example being the infinite-layer nickelate superconductors. However, the reduction effect on the atomic reconstruction and electronic structures -- crucial for superconductivity -- remains largely unresolved. We design two sets of control Nd$_{0.8}$Sr$_{0.2}$NiO$_2$ thin films and implement secondary ion mass spectroscopy to highlight the absence of reduction-induced hydrogen intercalation. X-ray absorption spectroscopy shows a significant linear dichroism with dominant Ni 3d$_{x2{-}y2}$ orbitals on superconducting samples, indicating a Ni single-band nature of infinite-layer nickelates. Consistent with the superconducting $T_c$, the Ni 3d orbitals asymmetry manifests a dome-like reduction duration dependence. Our results unveil the critical role of reduction in modulating the Ni-3d orbital polarization and its impact on the superconducting properties.

cond-mat.supr-con↗

arXiv2023

Oxygen Octahedral Tilt Controlled Topological Hall Effect in Epitaxial and Freestanding SrRuO3/SrIrO3 Heterostructures

The fabrication technique of freestanding oxide flakes by epitaxial lift-off has made significant contributions to the multifunctional oxide thin film research. Several highly impactful work have recently demonstrated the robustness of freestanding oxide flakes retaining their desirable properties after detachment from the substrate by dissolving away the water-soluble Sr3Al2O6 buffer layer. Firstly, in epitaxial SrRuO3/SrIrO3 systems showing Hall-humps reminiescence of Topological Hall Effect, first-principle calculations revealed that octahedral tilts can modify the sign of Dzyaloshinskii-Moriya interaction and avoid cancellation in a symmetric trilayer structure. Secondly, freestanding flakes of the trilayer is also able to retain the Hall-humps across a wide temperature range. The behaviour of humps' peak field does not vary with field direction rotation away from surface normal, consistent to a micromagnetic simulation result of Néel-type magnetic Skyrmions. The layer-resolved octahedral tilts in the freestanding heterostructures also crucially controls the occurrence of Hall-humps, consistent to the insight from the epitaxial ones. This work offers a new perspective to understanding Hall-humps in perovskite oxides, as well as demonstrates the fabrication of oxide heterostructure membranes with high interfacial quality.

cond-mat.mtrl-sci↗

arXiv2023

A Robust High-temperature Multiferroic Device with Tunable Topological Hall Effect

We fabricated Pt/La0.5Ba0.5MnO3 ultrathin films with integration to the PbZr0.2Ti0.8O3 ferroelectric. Strong Topological Hall Effect can be measured across a wide temperature range, which can be turned on and off corresponding to the ferroelectric polarization switching driven by short voltage pulses, indicating creation and annihilation of magnetic Skyrmions. However, its magnetoelectric coupling polarity was found to be opposite to the earlier consensus, which involves a phase transition between ferromagnetic and A-type antiferromagnetic in manganites due to electrostatic doping into the eg-orbitals by the ferroelectric bound charges. In our case, we propose a novel yet complementary picture where the transition occurs between C-type antiferromagnetic and ferromagnetic. The distinction between the earlier consensus and our picture lies at the tetragonal distortion of the manganite unit cell, resulting in an opposite magnetoelectric coupling polarity. We support the perceived relationship between the phase transition and tuning of Topological Hall Effect by micromagnetic simulations.

cond-mat.mtrl-sci↗

arXiv2023

Scanning SQUID-on-tip microscope in a top-loading cryogen-free dilution refrigerator

The scanning superconducting quantum interference device (SQUID) fabricated on the tip of a sharp quartz pipette (SQUID-on-tip) has emerged as a versatile tool for nanoscale imaging of magnetic, thermal, and transport properties of microscopic devices of quantum materials. We present the design and performance of a scanning SQUID-on-tip microscope in a top-loading probe of a cryogen-free dilution refrigerator. The microscope is enclosed in a custom-made vacuum-tight cell mounted at the bottom of the probe and is suspended by springs to suppress vibrations caused by the pulse tube cryocooler. Two capillaries allow in-situ control of helium exchange gas pressure in the cell that is required for thermal imaging. A nanoscale heater is used to create local temperature gradients in the sample, which enables quantitative characterization of the relative vibrations between the tip and the sample. The spectrum of the vibrations shows distinct resonant peaks with maximal power density of about 27 nm/Hz$^{1/2}$ in the in-plane direction. The performance of the SQUID-on-tip microscope is demonstrated by magnetic imaging of the MnBi$_2$Te$_4$ magnetic topological insulator, magnetization and current distribution imaging in a SrRuO$_3$ ferromagnetic oxide thin film, and by thermal imaging of dissipation in graphene.

cond-mat.mes-hall↗

arXiv2022

Experimental Evidence of t2g Electron-Gas Rashba Interaction Induced by Asymmetric Orbital Hybridization

We report the control of Rashba spin-orbit interaction by tuning asymmetric hybridization between Ti-orbitals at the LaAlO3/SrTiO3 interface. This asymmetric orbital hybridization is modulated by introducing a LaFeO3 layer between LaAlO3 and SrTiO3, which alters the Ti-O lattice polarization and traps interfacial charge carriers, resulting in a large Rashba spin-orbit effect at the interface in the absence of an external bias. This observation is verified through high-resolution electron microscopy, magneto-transport and first-principles calculations. Our results open hitherto unexplored avenues of controlling Rashba interaction to design next-generation spin-orbitronics.

cond-mat.mtrl-sci↗

arXiv2022

Skyrmionics in correlated oxides

While chiral magnets, metal-based magnetic multilayers, or Heusler compounds have been considered as the material workhorses in the field of skyrmionics, oxides are now emerging as promising alternatives, as they host special correlations between the spin-orbital-charge-lattice degrees of freedom and/or coupled ferroic order parameters. These interactions open new possibilities for practically exploiting skyrmionics. In this article, we review the recent advances in the observation and control of topological spin textures in various oxide systems. We start with the discovery of skyrmions and related quasiparticles in bulk and heterostructure ferromagnetic oxides. Next, we emphasize the shortcomings of implementing ferromagnetic textures, which have led to the recent explorations of ferrimagnetic and antiferromagnetic oxide counterparts, with higher Curie temperatures, stray-field immunity, low Gilbert damping, ultrafast magnetic dynamics, and/or absence of skyrmion deflection. Then, we highlight the development of novel pathways to control the stability, motion, and detection of topological textures using electric fields and currents. Finally, we present the outstanding challenges that need to be overcome to achieve all-electrical, nonvolatile, low-power oxide skyrmionic devices.

cond-mat.mtrl-sci↗

arXiv2020

Phase diagram and superconducting dome of infinite-layer $\mathrm{Nd_{1-x}Sr_{x}NiO_{2}}$ thin films

Infinite-layer Nd1-xSrxNiO2 thin films with Sr doping level x from 0.08 to 0.3 were synthesized and investigated. We found a superconducting dome to be between 0.12 and 0.235 which is accompanied by a weakly insulating behaviour in both underdoped and overdoped regimes. The dome is akin to that in the electron-doped 214-type and infinite-layer cuprate superconductors. For x higher than 0.18, the normal state Hall coefficient ($R_{H}$) changes the sign from negative to positive as the temperature decreases. The temperature of the sign changes monotonically decreases with decreasing x from the overdoped side and approaches the superconducting dome at the mid-point, suggesting a reconstruction of the Fermi surface as the dopant concentration changes across the center of the dome.

cond-mat.supr-con↗

arXiv2020

Topological Hall Effect and Skyrmion-like Bubbles at a Charge-transfer Interface

Exploring exotic interface magnetism due to charge transfer and strong spin-orbit coupling has profound application in future development of spintronic memory. Here, the emergence, tuning and interpretation of hump-shape Hall Effect from a CaMnO3/CaIrO3/CaMnO3 trilayer structure are studied in detail. The hump signal can be recognized as Topological Hall Effect suggesting the presence of Skyrmion-like magnetic bubbles; but the debated alternative interpretation where the signal being an artefact between two cancelling Anomalous Hall Effect loops is also discussed. Firstly, by tilting the magnetic field direction, the evolution of Hall signal suggests transformation of the bubbles topology into a more trivial kind. Secondly, by varying the thickness of CaMnO3, the optimal thicknesses for the hump signal emergence are found, suggesting a tuning of charge transfer fraction. Using high-resolution transmission electron microscopy, a stacking fault is also identified, which distinguishes the top and bottom CaMnO3/CaIrO3 interfaces in terms of charge transfer fraction and possible interfacial Dzyaloshinskii-Moriya Interaction. Finally, a spin-transfer torque experiment revealed a low threshold current density of ~10^9 A/m^2 for initiating the motion of bubbles. This discovery opens a possible route for integrating Skyrmions with antiferromagnetic spintronics.

cond-mat.mes-hall↗

arXiv2020

Characteristic Lengths of Interlayer Charge-Transfer in Correlated Oxide Heterostructures

Using interlayer interaction to control functional heterostructures with atomic-scale designs has become one of the most effective interface-engineering strategies nowadays. Here, we demonstrate the effect of a crystalline LaFeO3 buffer layer on amorphous and crystalline LaAlO3/SrTiO3 heterostructures. The LaFeO3 buffer layer acts as an energetically favored electron acceptor in both LaAlO3/SrTiO3 systems, resulting in modulation of interfacial carrier density and hence metal-to-insulator transition. For amorphous and crystalline LaAlO3/SrTiO3 heterostructures, the metal-to-insulator transition is found when the LaFeO3 layer thickness crosses 3 and 6 unit cells, respectively. Such different critical LaFeO3 thicknesses are explained in terms of distinct characteristic lengths of the redox-reaction-mediated and polar-catastrophe-dominated charge transfer, controlled by the interfacial atomic contact and Thomas-Fermi screening effect, respectively. Our results not only shed light on the complex interlayer charge transfer across oxide heterostructures but also provides a new route to precisely tailor the charge-transfer process at a functional interface.

cond-mat.mtrl-sci↗

arXiv2013

Mechanism of Polarization Fatigue in BiFeO3: the Role of Schottky Barrier

By using piezoelectric force microscopy and scanning Kelvin probe microscopy, we have investigated the domain evolution and space charge distribution in planar BiFeO3 capacitors with different electrodes. It is observed that charge injection at the film/electrode interface leads to domain pinning and polarization fatigue in BiFeO3. Furthermore, the Schottky barrier at the interface is crucial for the charge injection process. Lowering the Schottky barrier by using low work function metals as the electrodes can also improve the fatigue property of the device, similar to what oxide electrodes can achieve.

cond-mat.mtrl-sci↗