arXiv subjects

Zhi-Guo Tao

Publications and source records attributed to Zhi-Guo Tao.

4 recordsLinked to original sources

arXiv2026

Nonadiabatic Molecular Dynamics on Real-time Excited-State Surfaces via Machine Learning Hamiltonians

Simulating the coupled, nonequilibrium dynamics of electrons and nuclei is a central challenge in chemistry, physics, and materials science, governing phenomena from photocatalysis to quantum information. The primary bottleneck has been the lack of a general, accurate, and efficient method for modeling the complete excited-state landscape: the potential energy surfaces, forces, and non-adiabatic couplings for multiple electronic states. While machine learning has revolutionized ground-state simulations and shown promise for excited states in molecules, a unified framework that solves the complete multi-state problem for general condensed matter systems has remained elusive. Here we introduce on-the-fly N${^2}$AMD (Neural network NAMD), a machine learning framework that makes on-the-fly NAMD in solids a reality. By employing an equivariant neural network to predict the system Hamiltonian, the framework delivers excited-state energies, forces, and non-adiabatic coupling vectors at a fraction of the cost of ab initio calculations. Crucially, it allows simulations with hybrid functional accuracy, a level of approach previously inaccessible for NAMD. We showcase its capabilities with three topical examples: correcting order-of-magnitude errors in carrier dynamics predicted by conventional procedure in a MoS$_2$/WS$_2$ heterostructure, simulating previously inaccessible photoinduced ferroelectric switching, and capturing real-time polaron formation in TiO$_2$ at the hybrid-functional level. On-the-fly N${^2}$AMD moves beyond the limitations of equilibrium theory, establishing a new paradigm for the predictive, first-principles design of materials operating far from equilibrium.

physics.comp-ph↗

arXiv2024

Advancing Nonadiabatic Molecular Dynamics Simulations for Solids: Achieving Supreme Accuracy and Efficiency with Machine Learning

Non-adiabatic molecular dynamics (NAMD) simulations have become an indispensable tool for investigating excited-state dynamics in solids. In this work, we propose a general framework, N$^2$AMD which employs an E(3)-equivariant deep neural Hamiltonian to boost the accuracy and efficiency of NAMD simulations. The preservation of Euclidean symmetry of Hamiltonian enables N$^2$AMD to achieve state-of-the-art performance. Distinct from conventional machine learning methods that predict key quantities in NAMD, N$^2$AMD computes these quantities directly with a deep neural Hamiltonian, ensuring supreme accuracy, efficiency, and consistency. Furthermore, N$^2$AMD demonstrates excellent generalizability and enables seamless integration with advanced NAMD techniques and infrastructures. Taking several extensively investigated semiconductors as the prototypical system, we successfully simulate carrier recombination in both pristine and defective systems at large scales where conventional NAMD often significantly underestimates or even qualitatively incorrectly predicts lifetimes. This framework not only boosts the efficiency and precision of NAMD simulations but also opens new avenues to advance materials research.

physics.comp-ph↗

arXiv2023

Photo-accelerated hot carrier transfer at MoS2/WS2:a first-principles study

Charge transfer in type-II heterostructures plays important roles in determining device performance for photovoltaic and photocatalytic applications. However, current theoretical studies of charge transfer process don't consider the effects of operating conditions such as illuminations and yield systemically larger interlayer transfer time of hot electrons in MoS2/WS2 compared to experimental results. Here in this work, we propose a general picture that, illumination can induce interfacial dipoles in type-II heterostructures, which can accelerate hot carrier transfer by reducing the energy difference between the electronic states in separate materials and enhancing the nonadiabatic couplings. Using the first-principles calculations and the ab-initio nonadiabatic molecular dynamics, we demonstrate this picture using MoS2/WS2 as a prototype. The calculated characteristic time for the interlayer transfer (60 fs) and the overall relaxation (700 fs) processes of hot electrons is in good agreement with the experiments. We further find that illumination mainly affects the ultrafast interlayer transfer process but has little effects on the relatively slow intralayer relaxation process. Therefore, the overall relaxation process of hot electrons has a saturated time with increased illumination strengths. The illumination-accelerated charge transfer is expected to universally exist in type-II heterostructures.

cond-mat.mtrl-sci↗

arXiv2023

Defect theory under steady illuminations and applications

Illumination has been long known to affect semiconductor defect properties during either growth or operating process. Current theories of studying the illumination effects on defects usually have the assumption of unaffected formation energies of neutral defects as well as defect transition energy levels, and use the quasi-Fermi levels to describe behaviors of excess carriers with conclusions at variance. In this work, we first propose a method to simulate steady illumination conditions, based on which we demonstrate that formation energies of neutral defects and defect transition energy levels are insensitive to illumination. Then, we show that optical and thermal excitation of electrons can be seen equivalent with each other to reach a steady electron distribution in a homogeneous semiconductor. Consequently, the electron distribution can be characterized using just one effective temperature T' and one universal Fermi level E_F' for a homogeneous semiconductor under continuous and steady illuminations, which can be seen as a combination of quasi-equilibrium electron system with T' and a lattice system with T. Using the new concepts, we uncover the universal mechanisms of illumination effects on charged defects by treating the band edge states explicitly in the same footing as the defect states. We find that the formation energies of band edge 'defect' states shift with increased T' of electrons, thus affecting the E_F', changing defect ionic probabilities, and affecting concentrations of charged defects. We apply our theory to study the illumination effects on the doping behaviors in GaN:Mg and CdTe:Sb, obtaining results in accordance with experimental observations. More interesting experimental defect-related phenomena under steady illuminations are expected to be understood from our theory.

physics.comp-ph↗