arXiv subjects

Zhi-Min Liao

Publications and source records attributed to Zhi-Min Liao.

40 records · Page 3Linked to original sources

arXiv2016

Two-Carrier Transport Induced Hall Anomaly and Large Tunable Magnetoresistance in Dirac Semimetal Cd3As2 Nanoplates

Cd3As2 is a model material of Dirac semimetal with a linear dispersion relation along all three directions in the momentum space. The unique band structure of Cd3As2 makes it with both Dirac and topological properties. It can be driven into a Weyl semimetal by the symmetry breaking or a topological insulator by enhancing the spin-orbit coupling. Here we report the temperature and gate voltage dependent magnetotransport properties of Cd3As2 nanoplates with Fermi level near the Dirac point. The Hall anomaly demonstrates the two-carrier transport accompanied by a transition from n-type to p-type conduction with decreasing temperature. The carrier-type transition is explained by considering the temperature dependent spin-orbit coupling. The magnetoresistance exhibits a large non-saturating value up to 2000% at high temperatures, which is ascribed to the electron-hole compensation in the system. Our results are valuable for understanding the experimental observations related to the two-carrier transport in Dirac/Weyl semimetals, such as Na3Bi, ZrTe5, TaAs, NbAs, and HfTe5.

cond-mat.mtrl-sci↗

arXiv2016

Gate-Tunable Tunneling Resistance in Graphene/Topological Insulator Vertical Junctions

Graphene-based vertical heterostructures, particularly stacks incorporated with other layered materials, are promising for nanoelectronics. The stacking of two model Dirac materials, graphene and topological insulator, can considerably enlarge the family of van der Waals heterostructures. Despite well understanding of the two individual materials, the electron transport properties of a combined vertical heterojunction are still unknown. Here we show the experimental realization of a vertical heterojunction between Bi2Se3 nanoplate and monolayer graphene. At low temperatures, the electron transport through the vertical heterojunction is dominated by the tunneling process, which can be effectively tuned by gate voltage to alter the density of states near the Fermi surface. In the presence of a magnetic field, quantum oscillations are observed due to the quantized Landau levels in both graphene and the two-dimensional surface states of Bi2Se3. Furthermore, we observe an exotic gate-tunable tunneling resistance under high magnetic field, which displays resistance maxima when the underlying graphene becomes a quantum Hall insulator.

cond-mat.mes-hall↗

arXiv2016

Aharonov-Bohm oscillations in Dirac semimetal Cd3As2 nanowires

Three-dimensional Dirac semimetals, a three-dimensional analogue of graphene, are unusual quantum materials with massless Dirac fermions, which can be further converted to Weyl fermions by breaking time reversal or inversion symmetry. Topological surface states with Fermi arcs are predicted on the surface and have been observed by angle-resolved photoemission spectroscopy experiments. Although the exotic transport properties of the bulk Dirac cones have been demonstrated, it is still a challenge to reveal the surface states via transport measurements due to the highly conductive bulk states. Here, we show Aharonov-Bohm oscillations in individual single-crystal Cd3As2 nanowires with low carrier concentration and large surface-to-volume ratio, providing transport evidence of the surface state in three-dimensional Dirac semimetals. Moreover, the quantum transport can be modulated by tuning the Fermi level using a gate voltage, enabling a deeper understanding of rich physics residing in Dirac semimetals.

cond-mat.mes-hall↗

arXiv2015

Giant negative magnetoresistance induced by the chiral anomaly in individual Cd3As2 nanowires

Cd3As2 is a newly booming Dirac semimetal with linear dispersion along all three momentum directions and can be viewed as 3D analog of graphene. As breaking of either time reversal symmetry or spatial inversion symmetry, the Dirac semimetal is believed to transform into Weyl semimetal with exotic chiral anomaly effect, while the experimental evidence of the chiral anomaly is still missing in Cd3As2. Here we report the magneto-transport properties of individual Cd3As2 nanowires. Large negative magnetoresistance (MR) with magnitude of -63% at 60 K and -11% at 300 K are observed when the magnetic field is parallel with the electric field direction, giving the evidence of the chiral magnetic effect in Cd3As2 nanowires. In addition, the critical magnetic field BC, where there is an extremum of the negative MR, increases with increasing temperature. As the first observation of chiral anomaly induced negative MR in Cd3As2 nanowires, it may offer valuable insights for low dimensional physics in Dirac semimetals.

cond-mat.mes-hall↗