arXiv subjects

Zhi-Xun Shen

Publications and source records attributed to Zhi-Xun Shen.

142 records · Page 8Linked to original sources

arXiv2012

Observation of Temperature-Induced Crossover to an Orbital-Selective Mott Phase in A$_{x}$Fe$_{2-y}$Se$_2$ (A=K, Rb) Superconductors

In this work, we study the A$_{x}$Fe$_{2-y}$Se$_2$ (A=K, Rb) superconductors using angle-resolved photoemission spectroscopy. In the low temperature state, we observe an orbital-dependent renormalization for the bands near the Fermi level in which the dxy bands are heavily renormliazed compared to the dxz/dyz bands. Upon increasing temperature to above 150K, the system evolves into a state in which the dxy bands have diminished spectral weight while the dxz/dyz bands remain metallic. Combined with theoretical calculations, our observations can be consistently understood as a temperature induced crossover from a metallic state at low temperature to an orbital-selective Mott phase (OSMP) at high temperatures. Furthermore, the fact that the superconducting state of A$_{x}$Fe$_{2-y}$Se$_2$ is near the boundary of such an OSMP constraints the system to have sufficiently strong on-site Coulomb interactions and Hund's coupling, and hence highlight the non-trivial role of electron correlation in this family of iron superconductors.

cond-mat.supr-con↗

arXiv2012

Pseudogap, Superconducting Gap, and Fermi Arc in High-Tc Cuprates Revealed by Angle-Resolved Photoemission Spectroscopy

We present an overview of angle-resolved photoemission spectroscopy (ARPES) studies of high-temperature cuprate superconductors aiming at elucidating the relationship between the superconductivity, the pseudogap, and the Fermi arc. ARPES studies of underdoped samples show a momentum dependence of the energy gap below Tc which deviates from a simple d-wave form, suggesting the coexistence of multiple energy scales in the superconducting state. Hence, two distinct energy scales have been introduced, namely, the gap near the node (characterized by Delta_0) and in the anti-nodal region (characterized by Delta^*). Dichotomy between them has been demonstrated from the material, doping, and temperature dependence of the energy gap. While Delta^* at the same doping level is approximately material independent, Delta_0 shows a strong material dependence tracking the magnitude of Tc,max. The anti-nodal gap does not close at Tc in contrast to the gap near the node which follows something closer to a BCS-like temperature dependence. An effective superconducting gap Delta_sc defined at the end point of the Fermi arc is found to be proportional to Tc's in various materials.

cond-mat.supr-con↗

arXiv2011

Widespread spin polarization effects in photoemission from topological insulators

High resolution spin- and angle-resolved photoemission spectroscopy (spin-ARPES) was performed on the three-dimensional topological insulator Bi$_2$Se$_3$ using a recently developed high-efficiency spectrometer. The topological surface state's helical spin structure is observed, in agreement with theoretical prediction. Spin textures of both chiralities, at energies above and below the Dirac point, are observed, and the spin structure is found to persist at room temperature. The measurements reveal additional unexpected spin polarization effects, which also originate from the spin-orbit interaction, but are well differentiated from topological physics by contrasting momentum and photon energy and polarization dependencies. These observations demonstrate significant deviations of photoelectron and quasiparticle spin polarizations. Our findings illustrate the inherent complexity of spin-resolved ARPES and demonstrate key considerations for interpreting experimental results.

cond-mat.mtrl-sci↗

arXiv2011

Imaging of the Coulomb driven quantum Hall edge states

The edges of a two-dimensional electron gas (2DEG) in the quantum Hall effect (QHE) regime are divided into alternating metallic and insulating strips, with their widths determined by the energy gaps of the QHE states and the electrostatic Coulomb interaction. Local probing of these submicrometer features, however, is challenging due to the buried 2DEG structures. Using a newly developed microwave impedance microscope, we demonstrate the real-space conductivity mapping of the edge and bulk states. The sizes, positions, and field dependence of the edge strips around the sample perimeter agree quantitatively with the self-consistent electrostatic picture. The evolution of microwave images as a function of magnetic fields provides rich microscopic information around the ν= 2 QHE state.

cond-mat.mes-hall↗

arXiv2011

Ambipolar Field Effect in Topological Insulator Nanoplates of (BixSb1-x)2Te3

Topological insulators represent a new state of quantum matter attractive to both fundamental physics and technological applications such as spintronics and quantum information processing. In a topological insulator, the bulk energy gap is traversed by spin-momentum locked surface states forming an odd number of surface bands that possesses unique electronic properties. However, transport measurements have often been dominated by residual bulk carriers from crystal defects or environmental doping which mask the topological surface contribution. Here we demonstrate (BixSb1-x)2Te3 as a tunable topological insulator system to manipulate bulk conductivity by varying the Bi/Sb composition ratio. (BixSb1-x)2Te3 ternary compounds are confirmed as topological insulators for the entire composition range by angle resolved photoemission spectroscopy (ARPES) measurements and ab initio calculations. Additionally, we observe a clear ambipolar gating effect similar to that observed in graphene using nanoplates of (BixSb1-x)2Te3 in field-effect-transistor (FET) devices. The manipulation of carrier type and concentration in topological insulator nanostructures demonstrated in this study paves the way for implementation of topological insulators in nanoelectronics and spintronics.

cond-mat.str-el↗

arXiv2011

Cryogenic Microwave Imaging of Metal-Insulator Transition in Doped Silicon

We report the instrumentation and experimental results of a cryogenic scanning microwave impedance microscope. The microwave probe and the scanning stage are located inside the variable temperature insert of a helium cryostat. Microwave signals in the distance modulation mode are used for monitoring the tip-sample distance and adjusting the phase of the two output channels. The ability to spatially resolve the metal-insulator transition in a doped silicon sample is demonstrated. The data agree with a semi-quantitative finite-element simulation. Effects of the thermal energy and electric fields on local charge carriers can be seen in the images taken at different temperatures and DC biases.

cond-mat.mes-hall↗

arXiv2011

Rapid Surface Oxidation as a Source of Surface Degradation Factor for Bi2Se3

Bi2Se3 is a topological insulator with metallic surface states residing in a large bulk bandgap. It is believed that Bi2Se3 gets additional n-type doping after exposure to atmosphere, thereby reducing the relative contribution of surface states in total conductivity. In this letter, transport measurements on Bi2Se3 nanoribbons provide additional evidence of such environmental doping process. Systematic surface composition analyses by X-ray photoelectron spectroscopy reveal fast formation and continuous growth of native oxide on Bi2Se3 under ambient conditions. In addition to n-type doping at the surface, such surface oxidation is likely the material origin of the degradation of topological surface states. Appropriate surface passivation or encapsulation may be required to probe topological surface states of Bi2Se3 by transport measurements.

cond-mat.mtrl-sci↗

arXiv2010

Microwave imaging of mesoscopic percolating network in a manganite thin film

Many unusual behaviors in complex oxides are deeply associated with the spontaneous emergence of microscopic phase separation. Depending on the underlying mechanism, the competing phases can form ordered or random patterns at vastly different length scales. Using a microwave impedance microscope, we observed an orientation-ordered percolating network in strained Nd0.5Sr0.5MnO3 thin films with a large period of 100 nm. The filamentary metallic domains align preferentially along certain crystal axes of the substrate, suggesting the anisotropic elastic strain as the key interaction in this system. The local impedance maps provide microscopic electrical information of the hysteretic behavior in strained thin film manganites, suggesting close connection between the glassy order and the colossal magnetoresistance effects at low temperatures.

cond-mat.mes-hall↗

arXiv2010

Ultra-thin Topological Insulator Bi2Se3 Nanoribbons Exfoliated by Atomic Force Microscopy

Ultra-thin topological insulator nanostructures, in which coupling between top and bottom surface states takes place, are of great intellectual and practical importance. Due to the weak Van der Waals interaction between adjacent quintuple layers (QLs), the layered bismuth selenide (Bi2Se3), a single Dirac-cone topological insulator with a large bulk gap, can be exfoliated down to a few QLs. In this paper, we report the first controlled mechanical exfoliation of Bi2Se3 nanoribbons (> 50 QLs) by an atomic force microscope (AFM) tip down to a single QL. Microwave impedance microscopy is employed to map out the local conductivity of such ultra-thin nanoribbons, showing drastic difference in sheet resistance between 1~2 QLs and 4~5 QLs. Transport measurement carried out on an exfoliated (\leq 5 QLs) Bi2Se3 device shows non-metallic temperature dependence of resistance, in sharp contrast to the metallic behavior seen in thick (> 50 QLs) ribbons. These AFM-exfoliated thin nanoribbons afford interesting candidates for studying the transition from quantum spin Hall surface to edge states.

cond-mat.mes-hall↗

arXiv2009

Topological Insulator Nanowires and Nanoribbons

Recent theoretical calculations and photoemission spectroscopy measurements on the bulk Bi2Se3 material show that it is a three-dimensional topological insulator possessing conductive surface states with nondegenerate spins, attractive for dissipationless electronics and spintronics applications. Nanoscale topological insulator materials have a large surface-to-volume ratio that can manifest the conductive surface states and are promising candidates for devices. Here we report the synthesis and characterization of high quality single crystalline Bi2Se3 nanomaterials with a variety of morphologies. The synthesis of Bi2Se3 nanowires and nanoribbons employs Au-catalyzed vapor-liquid-solid (VLS) mechanism. Nanowires, which exhibit rough surfaces, are formed by stacking nanoplatelets along the axial direction of the wires. Nanoribbons are grown along [11-20] direction with a rectangular cross-section and have diverse morphologies, including quasi-one-dimensional, sheetlike, zigzag and sawtooth shapes. Scanning tunneling microscopy (STM) studies on nanoribbons show atomically smooth surfaces with ~ 1 nm step edges, indicating single Se-Bi-Se-Bi-Se quintuple layers. STM measurements reveal a honeycomb atomic lattice, suggesting that the STM tip couples not only to the top Se atomic layer, but also to the Bi atomic layer underneath, which opens up the possibility to investigate the contribution of different atomic orbitals to the topological surface states. Transport measurements of a single nanoribbon device (four terminal resistance and Hall resistance) show great promise for nanoribbons as candidates to study topological surface states.

cond-mat.mes-hall↗

arXiv2009

Quantum Imaging of Topologically Unpaired Spin-Polarized Dirac Fermions

The motion of a relativistic particle is linked to its spin by the Dirac equation. Remarkably, electrons in two-dimensional materials can mimic such Dirac particles but must always appear in pairs of opposite spin chirality. Using topological ideas of chiral boundary electrons wrapping a three-dimensional crystal with tuned spin-orbit coupling, we show that elusive unpaired Dirac fermions exist on the surface of a topological insulator parent matrix, pure antimony. Using scanning tunneling microscopy and angle-resolved photoemission spectroscopy we image coherent quantum interference between these particles, map their helical spin texture, and ultimately observe a transition to a single Dirac fermion distinguished by backscattering suppression via Berry phase interference. The robust dynamics of these unique spin-polarized carriers envisage future applications in spintronics and topological quantum computation.

cond-mat.mes-hall↗

arXiv2009

Aharonov-Bohm interference in topological insulator nanoribbons

Topological insulators represent novel phases of quantum matter with an insulating bulk gap and gapless edges or surface states. The two-dimensional topological insulator phase was predicted in HgTe quantum wells and confirmed by transport measurements. Recently, Bi2Se3 and related materials have been proposed as three-dimensional topological insulators with a single Dirac cone on the surface and verified by angle-resolved photoemission spectroscopy experiments. Here, we show unambiguous transport evidence of topological surface states through periodic quantum interference effects in layered single-crystalline Bi2Se3 nanoribbons. Pronounced Aharonov-Bohm oscillations in the magnetoresistance clearly demonstrate the coverage of two-dimensional electrons on the entire surface, as expected from the topological nature of the surface states. The dominance of the primary h/e oscillation and its temperature dependence demonstrate the robustness of these electronic states. Our results suggest that topological insulator nanoribbons afford novel promising materials for future spintronic devices at room temperature.

cond-mat.mes-hall↗

arXiv2009

Nanoscale Electronic Inhomogeneity in In2Se3 Nanoribbons Revealed by Microwave Impedance Microscopy

Driven by interactions due to the charge, spin, orbital, and lattice degrees of freedom, nanoscale inhomogeneity has emerged as a new theme for materials with novel properties near multiphase boundaries. As vividly demonstrated in complex metal oxides and chalcogenides, these microscopic phases are of great scientific and technological importance for research in high-temperature superconductors, colossal magnetoresistance effect, phase-change memories, and domain switching operations. Direct imaging on dielectric properties of these local phases, however, presents a big challenge for existing scanning probe techniques. Here, we report the observation of electronic inhomogeneity in indium selenide (In2Se3) nanoribbons by near-field scanning microwave impedance microscopy. Multiple phases with local resistivity spanning six orders of magnitude are identified as the coexistence of superlattice, simple hexagonal lattice and amorphous structures with 100nm inhomogeneous length scale, consistent with high-resolution transmission electron microscope studies. The atomic-force-microscope-compatible microwave probe is able to perform quantitative sub-surface electronic study in a noninvasive manner. Finally, the phase change memory function in In2Se3 nanoribbon devices can be locally recorded with big signal of opposite signs.

cond-mat.mtrl-sci↗

arXiv2008

Energy gaps in the failed high-Tc superconductor La1.875Ba0.125CuO4

A central issue on high-Tc superconductivity is the nature of the normal-state gap (pseudogap) in the underdoped regime and its relationship with superconductivity. Despite persistent efforts, theoretical ideas for the pseudogap evolve around fluctuating superconductivity, competing order and spectral weight suppression due to many-body effects. Recently, while some experiments in the superconducting state indicate a distinction between the superconducting gap and pseudogap, others in the normal state, either by extrapolation from high-temperature data or directly from La1.875Ba0.125CuO4 (LBCO-1/8) at low temperature, suggest the ground-state pseudogap is a single gap of d-wave form. Here we report angle-resolved photoemission (ARPES) data from LBCO-1/8, collected with improved experimental conditions, that reveal the ground-state pseudogap has a pronounced deviation from the simple d-wave form. It contains two distinct components: a d-wave component within an extended region around the node and the other abruptly enhanced close to the antinode, pointing to a dual nature of the pseudogap in this failed high-Tc superconductor which involves a possible precursor pairing energy scale around the node and another of different but unknown origin near the antinode.

cond-mat.supr-con↗

arXiv2003

Angle-Resolved Photoemission Spectroscopy Studies of Cuprate Superconductors

This paper summarizes experimental results presented at the international conference honoring Prof. C.N. Yang's 80th birthday. I show seven examples that illustrate how one can use angle-resolved photoemission spectroscopy to gain insights into the many-body physics responsible for the rich phase diagram of cuprate superconductors. I hope to give the reader a snapshot of the evolution of this experimental technique from a tool to study chemical bonds and band structure to an essential many-body spectroscopy for one of the most important physics problems of our time.

cond-mat.supr-con↗

arXiv2002

Angle-resolved photoemission spectroscopy of the cuprate superconductors

This paper reviews the most recent ARPES results on the cuprate superconductors and their insulating parent and sister compounds, with the purpose of providing an updated summary of the extensive literature in this field. The low energy excitations are discussed with emphasis on some of the most relevant issues, such as the Fermi surface and remnant Fermi surface, the superconducting gap, the pseudogap and d-wave-like dispersion, evidence of electronic inhomogeneity and nano-scale phase separation, the emergence of coherent quasiparticles through the superconducting transition, and many-body effects in the one-particle spectral function due to the interaction of the charge with magnetic and/or lattice degrees of freedom. The first part of the paper introduces photoemission spectroscopy in the context of strongly interacting systems, along with an update on the state-of-the-art instrumentation. The second part provides a brief overview of the scientific issues relevant to the investigation of the low energy electronic structure by ARPES. The rest of the paper is devoted to the review of experimental results from the cuprates and the discussion is organized along conceptual lines: normal-state electronic structure, interlayer interaction, superconducting gap, coherent superconducting peak, pseudogap, electron self energy and collective modes. Within each topic, ARPES data from the various copper oxides are presented.

cond-mat.supr-con↗