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Zhida Song

Publications and source records attributed to Zhida Song.

At least 19 recordsLinked to original sources

Emergent Vibronic Spectral Hierarchy in a Kagome Flat-Band Insulator

Electron-phonon coupling is usually understood in terms of electronic quasiparticles interacting with dispersive lattice vibrations. Much less is known about the complementary limit in which the relevant phonon mode is itself localized or weakly dispersive. Here we investigate this regime in the kagome compound Rb$_{2}$Ni$_{3}$S$_{4}$, which undergoes an unconventional insulating transition near $T^{*} \approx$ 260-280~K. Combining polarization-resolved Raman spectroscopy with temperature-dependent x-ray diffraction, scanning tunneling microscopy, and electrical, thermal, and magnetic measurements, we show that the transition involves electronic localization without a conventional structural or magnetic order parameter. Raman spectra reveal a giant Franck-Condon progression associated with a nearly dispersionless 333.7~cm$^{-1}$ phonon, decorated by an equally spaced comb-like fine structure with a characteristic spacing of 40.6~cm$^{-1}$. The comb spacing is insensitive to magnetic field, whereas its spectral weight is strongly field tunable. Rather than treating either hierarchy alone as pure phonon effect, we interpret their nested coexistence as evidence for a strongly coupled electron-vibrational manifold involving a localized lattice coordinate. These results identify dispersionless phonons as an active route to vibronic correlations in solids and suggest that such electron-vibrational self-trapping is closely associated with the insulating phase of Rb$_{2}$Ni$_{3}$S$_{4}$.

cond-mat.str-el

Field-induced asymmetric band flattening and ideal quantum geometry in rhombohedral graphene

Rhombohedral graphene exhibits an exceptionally diverse array of correlated phases that depend sensitively on the displacement field. Compiling reported phases into a unified phase diagram reveals a pronounced field-dependent electron-hole asymmetry: correlated states on the hole-doped side emerge at small displacement fields, whereas the fractional quantum anomalous Hall effect (FQAHE) is observed exclusively on the electron-doped side under large displacement fields. This stark asymmetry highlights the need to understand how flat bands evolve with displacement fields. Here, we directly visualize the field-induced electron-hole asymmetric band flattening in rhombohedral pentalayer graphene (R5G) using nanospot angle-resolved photoemission spectroscopy with electrostatic gating. Beyond gap opening and spectral weight redistribution indicative of layer polarization, the gating field drives a strongly asymmetric modification of the flat bands: the flat valence band (FVB) evolves into an M-shaped dispersion at high field, whereas the flat conduction band (FCB) progressively flattens with increasing field. Comparison with calculations identifies critical parameters governing the band curvature of R5G, from which the resulting finite Berry curvature and near-ideal quantum geometry support the emergence of topological phases under electron doping at large fields. These results establish a direct link between the asymmetric phase diagram, band structure evolution, and quantum geometry, providing a microscopic framework for understanding correlated and topological phases in rhombohedral graphene.

cond-mat.mes-hall

Chern number reversal and emergent superconductivity in rhombohedral graphene induced by in-plane magnetic fields

Rhombohedral graphene with topological flat bands offers an ideal platform for realizing correlated and topological quantum phases. Here we investigate hBN aligned eight-layer rhombohedral graphene moire superlattices, which host a robust quantum anomalous Hall (QAH) state alongside three unconventional superconducting phases. For electron-doped carriers away from the moire potential, we observe QAH Chern number reversal driven by the displacement fields and in plane magnetic fields. For hole-doped carriers near the moire superlattice, the three superconducting phases exhibit distinctively different in plane magnetic field responses: one is weakly enhanced, the second is strongly suppressed, and the third exclusively induced by in plane magnetic field. The isotropic in plane magnetic field response in the QAH regime points to interplay between orbital magnetism and spin-orbit coupling, and the field-emergent superconductivity provides compelling evidence for spin-triplet pairing. Our work demonstrates a highly versatile platform for coexisting topological and superconducting states, and highlights in plane magnetic field as a powerful in-situ control knob for engineering novel quantum devices.

cond-mat.str-el

Entangled Moire Chern Insulator in Rhombohedral Graphene

Graphene-based moire superlattices exhibit novel quantum phenomena driven by pronounced interactions, leading to topological corrected states like orbital Chern insulators exhibiting quantum anomalous Hall effect (QAHE). Typically, intrinsic Chern insulators are stabilized at odd moir\'e fillings, as even fillings often result in valley-balanced, topologically trivial states at zero magnetic field. In our work, we report the observation of an intrinsic Chern insulator with C = 1 state at moire filling v = 2 in rhombohedral octalayer graphene (R8G)/hBN moire superlattice. Observing such Chern insulators in particular with C = 1 at v = 2 is intriguing, as each moir\'e band carries Chern number C = 1 or -1. We further demonstrate such a state can originate from the entanglement between the low-energy moire flat bands and high-energy remote bands according to the Hartree-Fock calculation. Our findings extend the known topological phase diagram of rhombohedral multilayer graphene (RMG) moire systems and establish this platform as highly promising for investigating strong electron correlations and multiband hybridized transport.

cond-mat.mes-hall

Fractional High-Chern Insulator in Twisted Rhombohedral Graphene

The realization of fractional Chern insulators opens up the possibility of exploring fractionally charged excitations and anyonic statistics in the absence of a magnetic field. A central question is whether lattice-based systems can give rise to radically new states, distinct from those observed in traditional fractional quantum Hall systems. In this work, we investigate a new type of moir\'e flat band system composed of Bernal bilayer graphene and rhombohedral tetralayer graphene. We discover an unprecedented richness of quantum anomalous Hall insulators with Chern numbers from C = 1 to C = 7 at v = 1 and around v = 3. Remarkably, we observe an exotic fractional Chern insulator with C = 7/3 around v = 2/3 which is beyond all known fractional Chern insulators described by either the Jain sequence or current high Chern theory. Our work expands the understanding of fractionally charged excitations beyond the Landau level basis and offers a new moire platform for exploring anyons.

cond-mat.mes-hall

Programmable Quantum Anomalous Hall Insulator in Twisted Crystalline Flatbands

The isospin flavors in condensed matters can be continuously broken, forming various symmetry-broken quantum states. In moir\'e crystals, the competition between different isospin configurations can be effectively tuned by the twist angles and staciking orders. Here we report twisted double rhombohedral-trilayer-gaphene as a new twisted crystalline flatbands system showing rich moir\'e dependent topological phenomena. In devices with small twist angles, programmable Chern insulators with Chern number C = 3 at integer moir\'e filling v = 1 have been observed. We have further revealed an exotic hidden order which can quench the Chern insulator as well as multiple first-order transitions between different symmetry-broken phases. Interestly, in the device with a slightly larger twist angle, multiple Chern insulators with C = 1 at fractional moir\'e fillings including v = 1/4, 1/3 and 1/2 have been observed, whereas the Chern insulator at v = 1 is abscent. Our study demonstrated the twisted flatbands form rhombohedral-multilayer-graphene as a new platform to study tunable high Chern insulators as well as new devices for quantum storage and computation.

cond-mat.mes-hall

Stable Real-Space Invariants and Topology Beyond Symmetry Indicators

We introduce stable real-space invariants (SRSIs), topological invariants defined from adiabatic deformations between Wannier states, generalizing previously discovered local and composite real-space invariants. SRSIs are $\mathbb{Z}$- and $\mathbb{Z}_n$-valued ($n=2,4$) linear combinations of Wannier state multiplicities characterizing the stable equivalence of atomic insulators. We enumerate all SRSIs in nonmagnetic space groups with and without spin-orbit coupling. $\mathbb{Z}$SRSIs are in one-to-one correspondence with momentum-space symmetry data and thus determine symmetry indicators of topology (SIs). $\mathbb{Z}_n$SRSIs capture real-space information beyond momentum-space symmetry data and SIs. Applying SRSIs to split elementary band representations (EBRs) whose symmetry data decomposes into positive sums of other EBR symmetry data, we diagnose the topology of all 211 cases across 51 space groups except for 8 exceptions in 5 space groups. Our results solidify Topological Quantum Chemistry beyond SIs and momentum-space symmetry data. Finally, we use SRSIs to diagnose an obstructed atomic insulator in a realistic material.

cond-mat.mes-hall

Moir\'e enhanced flat band in rhombohedral graphene

The fractional quantum anomalous Hall effect (FQAHE) is a fascinating emergent quantum state characterized by fractionally charged excitations in the absence of magnetic field,which could arise from the intricate interplay between electron correlation, nontrivial topology and spontaneous time-reversal symmetry breaking. Recently, FQAHE has been realized in aligned rhombohedral pentalayer graphene on BN superlattice (aligned R5G/BN), where the topological flat band is modulated by the moir\'e potential. However, intriguingly, the FQAHE is observed only when electrons are pushed away from the moir\'e interface. The apparently opposite implications from these experimental observations, along with different theoretical models, have sparked intense debates regarding the role of the moir\'e potential. Unambiguous experimental observation of the topological flat band as well as moir\'e bands with energy and momentum resolved information is therefore critical to elucidate the underlying mechanism. Here by performing nanospot angle-resolved photoemission spectroscopy (NanoARPES) measurements, we directly reveal the topological flat band electronic structures of R5G, from which key hopping parameters essential for determining the fundamental electronic structure of rhombohedral graphene are extracted. Moreover, a comparison of electronic structures between aligned and non-aligned samples reveals that the moir\'e potential plays a pivotal role in enhancing the topological flat band in the aligned sample. Our study provides experimental guiding lines to narrow down the phase space of rhombohedral graphene, laying an important foundation for understanding exotic quantum phenomena in this emerging platform.

cond-mat.mes-hall

Commensurate and Incommensurate Chern Insulators in Magic-angle Bilayer Graphene

The interplay between strong electron-electron interaction and symmetry breaking can have profound influence on the topological properties of materials. In magic angle twisted bilayer graphene (MATBG), the flat band with a single SU(4) flavor associated with the spin and valley degrees of freedom gains non-zero Chern number when C2z symmetry or C2zT symmetry is broken. Electron-electron interaction can further lift the SU(4) degeneracy, leading to the Chern insulator states. Here we report a complete sequence of zero-field Chern insulators at all odd integer fillings (v = +-1, +-3) with different chirality (C = 1 or -1) in hBN aligned MATBG which structurally breaks C2z symmetry. The Chern states at hole fillings (v = -1, -3), which are firstly observed in this work, host an opposite chirality compared with the electron filling scenario. By slightly doping the v = +-3 states, we have observed new correlated insulating states at incommensurate moir\'e fillings which is highly suggested to be intrinsic Wigner crystals according to our theoretical calculations. Remarkably, we have observed prominent Streda-formula violation around v = -3 state. By doping the Chern gap at v = -3 with notable number of electrons at finite magnetic field, the Hall resistance Ryx robustly quantizes to ~ h/e2 whereas longitudinal resistance Rxx vanishes, indicating that the chemical potential is pinned within a Chern gap, forming an incommensurate Chern insulator. By providing the first experimental observation of zero-field Chern insulators in the flat valence band, our work fills up the overall topological framework of MATBG with broken C2z symmetry. Our findings also demonstrate that doped topological flat band is an ideal platform to investigate exotic incommensurate correlated topological states.

cond-mat.mes-hall

Ring states in topological materials

Ingap states are commonly observed in semiconductors and are often well characterized by a hydrogenic model within the effective mass approximation. However, when impurities are strong, they significantly perturb all momentum eigenstates, leading to deep-level bound states that reveal the global properties of the unperturbed band structure. In this work, we discover that the topology of band wavefunctions can impose zeros in the impurity-projected Green's function within topological gaps. These zeros can be interpreted as spectral attractors, defining the energy at which ingap states are pinned in the presence of infinitely strong local impurities. Their pinning energy is found by minimizing the level repulsion of band eigenstates onto the ingap state. We refer to these states as ring states, marked by a mixed band character and a node at the impurity site, guaranteeing their orthogonality to the bare impurity eigenstates and a weak energy dependence on the impurity strength. We show that the inability to construct symmetric and exponentially localized Wannier functions ensures topological protection of ring states. Linking ring states together, the edge or surface modes can be recovered for any topologically protected phase. Therefore, ring states can also be viewed as building blocks of boundary modes, offering a framework to understand bulk-boundary correspondence.

cond-mat.mes-hall

Tunable Fractional Chern Insulators in Rhombohedral Graphene Superlattices

Fractional Chern insulators (FCIs) showing a transport effect with fractionally quantized Hall plateaus emerging under zero magnetic field, provide a radically new opportunity to engineer topological quantum electronics. By construction of topological flat band with moire engineering, intrinsic FCIs have been observed in twisted MoTe2 system and rhombohedral pentalayer graphene/hBN moire superlattices with anomalous Hall resistivity quantization number C <= 2/3 including the gapless composite Fermi-liquid state with C = 1/2. Here, we experimentally demonstrate a new system of rhombohedral hexalayer graphene (RHG)/hBN moire superlattices, which exhibit both integer and fractional quantum anomalous Hall effects with rich tunability including electric displacement field, perpendicular magnetic field and in-plane magnetic field. By tuning the electrical and magnetic fields at 0 < v < 1, we have observed a quantum phase transition showing a sign reversal of the Hall resistivity at finite magnetic fields. Surprisingly, the FCI state at v = 2/3 survives in the phase transitions, exhibiting a robust quantized Hall resistivity across both phases. Finally we have further demonstrated the indispensable role moire potential plays in the formation of the flat Chern band from a theoretical perspective. Our work has established RHG/hBN moire superlattices as a promising platform for exploring quasi-particles with fractional charge and non-Abelian anyons at zero magnetic field.

cond-mat.mes-hall

Correlated Charge Density Wave Insulators in Chirally Twisted Triple Bilayer Graphene

Electrons residing in flat-band system can play a vital role in triggering spectacular phenomenology due to relatively large interactions and spontaneous breaking of different degeneracies. In this work we demonstrate chirally twisted triple bilayer graphene, a new moir\'e structure formed by three pieces of helically stacked Bernal bilayer graphene, as a highly tunable flat-band system. In addition to the correlated insulators showing at integer moir\'e fillings, commonly attributed to interaction induced symmetry broken isospin flavors in graphene, we observe abundant insulating states at half-integer moir\'e fillings, suggesting a longer-range interaction and the formation of charge density wave insulators which spontaneously break the moir\'e translation symmetry. With weak out-of-plane magnetic field applied, as observed half-integer filling states are enhanced and more quarter-integer filling states appear, pointing towards further quadrupling moir\'e unit cells. The insulating states at fractional fillings combined with Hartree-Fock calculations demonstrate the observation of a new type of correlated charge density wave insulators in graphene and points to a new accessible twist manner engineering correlated moir\'e electronics.

cond-mat.mes-hall

Probing fragile topology with a screw dislocation

Fragile topology, akin to twisted bilayer graphene and the exotic phases therein, is a notable topological class with intriguing properties. However, due to its unique nature and the lack of bulk-edge correspondence, the experimental signature of fragile topology has been under debated since its birth. Here, we demonstrate experimentally that fragile topological phases with filling anomaly can be probed via screw dislocations, despite that they do not support gapless edge states. Using a designer hexagonal phononic crystal with a fragile topological band gap, we find that 1D gapless bound modes can emerge at a screw dislocation due to the bulk fragile topology. We then establish a connection between our system and the twisted boundary condition via the gauge invariance principle and illustrate that such an emergent phenomenon is an intrinsic property of fragile topological phases with filling anomaly. We observe experimentally the 1D topological bound states using the pump-probe measurements of their dispersion and wavefunctions, which unveils a novel bulk-defect correspondence of fragile topology and a powerful tool for probing fragile topological phases and materials.

cond-mat.mes-hall

Evolution of flat band and role of lattice relaxations in twisted bilayer graphene

Magic-angle twisted bilayer graphene (MATBG) exhibits correlated phenomena such as superconductivity and Mott insulating state related to the weakly dispersing flat band near the Fermi energy. Beyond its moir\'e period, such flat band is expected to be sensitive to lattice relaxations. Thus, clarifying the evolution of the electronic structure with twist angle is critical for understanding the physics of MATBG. Here, we combine nanospot angle-resolved photoemission spectroscopy and atomic force microscopy to resolve the fine electronic structure of the flat band and remote bands, and their evolution with twist angles from 1.07$^\circ$ to 2.60$^\circ$. Near the magic angle, dispersion is characterized by a flat band near the Fermi energy with a strongly reduced bandwidth. Moreover, near 1.07$^\circ$, we observe a spectral weight transfer between remote bands at higher binding energy and extract the modulated interlayer spacing near the magic angle. Our work provides direct spectroscopic information on flat band physics and highlights the role of lattice relaxations.

cond-mat.mes-hall

Theory of Topological Superconductivity in Doped IV-VI Semiconductors

We theoretically study potential unconventional superconductivity in doped AB-type IV-VI semi-conductors, based on a minimal effective model with interaction up to the next-nearest neighbors. According to the experimental implications, we focus on the spin-triplet channels and obtain the superconducting phase diagram with respect to the anisotropy of the Fermi surfaces and the interaction strength. Abundant nodal and nodeless states with different symmetry breaking appear in the phase diagram, and all the states are time reversal invariant and topologically nontrivial. Specifically, the various nodal superconducting ground states, dubbed as the topological Dirac superconductors, are featured by Dirac nodes in the bulk and Majorana arcs on the surface; among the full-gap states, there exist a mirror-symmetry-protected second-order topological superconductor state favoring helical Majorana hinge cones, and different first-order topological superconductor states supporting 4 surface Majorana cones. The experimental verification of the different kinds of superconducting ground states is also discussed.

cond-mat.supr-con

Fragile topologically flat band in the checkerboard antiferromagnetic monolayer FeSe

By means of the first-principles calculations and magnetic topological quantum chemistry, we demonstrate that the low energy physics in the checkerboard antiferromagnetic (AFM) monolayer FeSe, very close to an AFM topological insulator that hosts robust edge states, can be well captured by a double-degenerate fragile topologically flat band just below the Fermi level. The Wilson loop calculations identify that such fragile topology is protected by the $S_{4z}$ symmetry, which gives rise to an AFM higher-order topological insulator that support the bound state with fractional charge $e/2$ at the sample corner. This is the first reported $S_{4z}$-protected fragile topological material, which provides a new platform to study the intriguing properties of magnetic fragile topological electronic states. Previous observations of the edge states and bound states in checkerboard AFM monolayer FeSe can also be well understood in our work.

cond-mat.mtrl-sci

Evidence for a Monolayer Excitonic Insulator

The interplay between topology and correlations can generate a variety of quantum phases, many of which remain to be explored. Recent advances have identified monolayer WTe2 as a promising material for doing so in a highly tunable fashion. The ground state of this two-dimensional (2D) crystal can be electrostatically tuned from a quantum spin Hall insulator (QSHI) to a superconductor. However, much remains unknown about the gap-opening mechanism of the insulating state. Here we report evidence that the QSHI is also an excitonic insulator (EI), arising from the spontaneous formation of electron-hole bound states (excitons). We reveal the presence of an intrinsic insulating state at the charge neutrality point (CNP) in clean samples and confirm the correlated nature of this charge-neutral insulator by tunneling spectroscopy. We provide evidence against alternative scenarios of a band insulator or a localized insulator and support the existence of an EI phase in the clean limit. These observations lay the foundation for understanding a new class of correlated insulators with nontrivial topology and identify monolayer WTe2 as a promising candidate for exploring quantum phases of ground-state excitons.

cond-mat.mes-hall

Obstructed surface states as the origin of catalytic activity in inorganic heterogeneous catalysts

The discovery of new catalysts that are efficient, sustainable, and low-cost is a major research endeavor for many industrial chemical processes. This requires an understanding and determination of the catalytic origins for the given catalysts, which still remains a challenge. Here we describe a novel method to identify new catalysts based on searching for crystalline symmetry-protected obstructed atomic insulators (OAIs) that have metallic surface states on otherwise semiconducting or insulating compounds. The Wannier charge centers in OAIs are pinned by symmetries at some empty Wyckoff positions so that surfaces that accommodate these sites are guaranteed to have metallic obstructed surface states (OSSs). Beyond the well-studied 2H-MoS2, we further verified our theory on the catalysts, 2H-MoTe2, and 1T'-MoTe2, whose catalytic active sites are consistent with our calculations of obstructed Wannier charge centers (OWCCs) and OSSs. In addition, we have predicted the location of catalytic active sites and confirmed these predictions by exploring the hydrogen evolution reaction on NiPS3 bulk single crystals, which we find to be one of the most promising new catalysts with high activity and, moreover, of low cost. Most importantly, we successfully identified several high-efficient catalysts just by considering the number of OWCCs and the crystal symmetry of the OAIs. Using the real space invariant theory and high-throughput computational methods applied to a database of 34013 topologically trivial insulators, we have identified 1788 unique OAIs (3383 ICSDs), of which 465 are potential high-quality catalysts for heterogeneous reactions. The Miller indices of the active surfaces are also obtained. Our new methodology will facilitate and accelerate the discovery of new catalysts for a wide range of heterogeneous redox reactions, where sustainability, toxicity, and cost must be considered.

cond-mat.mtrl-sci