arXiv subjects

Zhiguo Chen

Publications and source records attributed to Zhiguo Chen.

6 recordsLinked to original sources

arXiv2026

RAD-DPO: Robust Adaptive Denoising Direct Preference Optimization for Generative Retrieval in E-commerce

Generative Retrieval (GR) is rapidly transforming e-commerce search by replacing traditional multi-stage pipelines with the autoregressive decoding of structured Semantic IDs (SIDs). Despite this architectural efficiency, aligning GR models with nuanced, real-world user preferences remains a critical challenge. While Direct Preference Optimization (DPO) offers an efficient alignment solution, its direct application to structured SIDs suffers from three limitations: (i) it penalizes shared hierarchical prefixes, causing gradient conflicts; (ii) it is vulnerable to noisy pseudo-negatives from implicit feedback; and (iii) in multi-label queries with multiple relevant items, it exacerbates a probability "squeezing effect" among valid candidates. To address these issues, we propose RAD-DPO, which introduces token-level gradient detachment to protect prefix structures, similarity-based dynamic reward weighting to mitigate label noise, and a multi-label global contrastive objective integrated with global SFT loss to explicitly expand positive coverage. Extensive offline evaluations and large-scale online A/B testing on JD.com's core search engine demonstrate that RAD-DPO achieves significant improvements in both retrieval precision and training efficiency, proving its robustness for massive industrial deployments.

cs.IR↗

arXiv2025

A Simple and Effective Framework for Symmetric Consistent Indexing in Large-Scale Dense Retrieval

Dense retrieval has become the industry standard in large-scale information retrieval systems due to its high efficiency and competitive accuracy. Its core relies on a coarse-to-fine hierarchical architecture that enables rapid candidate selection and precise semantic matching, achieving millisecond-level response over billion-scale corpora. This capability makes it essential not only in traditional search and recommendation scenarios but also in the emerging paradigm of generative recommendation driven by large language models, where semantic IDs-themselves a form of coarse-to-fine representation-play a foundational role. However, the widely adopted dual-tower encoding architecture introduces inherent challenges, primarily representational space misalignment and retrieval index inconsistency, which degrade matching accuracy, retrieval stability, and performance on long-tail queries. These issues are further magnified in semantic ID generation, ultimately limiting the performance ceiling of downstream generative models. To address these challenges, this paper proposes a simple and effective framework named SCI comprising two synergistic modules: a symmetric representation alignment module that employs an innovative input-swapping mechanism to unify the dual-tower representation space without adding parameters, and an consistent indexing with dual-tower synergy module that redesigns retrieval paths using a dual-view indexing strategy to maintain consistency from training to inference. The framework is systematic, lightweight, and engineering-friendly, requiring minimal overhead while fully supporting billion-scale deployment. We provide theoretical guarantees for our approach, with its effectiveness validated by results across public datasets and real-world e-commerce datasets.

cs.IR↗

arXiv2024

A single-phase epitaxially grown ferroelectric perovskite nitride

The integration of ferroelectrics with semiconductors is crucial for developing functional devices, such as field-effect transistors, tunnel junctions, and nonvolatile memories. However, the synthesis of high-quality single-crystalline ferroelectric nitride perovskites has been limited, hindering a comprehensive understanding of their switching dynamics and potential applications. Here we report the synthesis and characterizations of epitaxial single-phase ferroelectric cerium tantalum nitride (CeTaN3) on both oxides and semiconductors. The polar symmetry of CeTaN3 was confirmed by observing the atomic displacement of central ions relative to the center of the TaN6 octahedra, as well as through optical second harmonic generation. We observed switchable ferroelectric domains in CeTaN3 films using piezo-response force microscopy, complemented by the characterization of square-like polarization-electric field hysteresis loops. The remanent polarization of CeTaN3 reaches approximately 20 uC/cm2 at room temperature, consistent with theoretical calculations. This work establishes a vital link between ferroelectric nitride perovskites and their practical applications, paving the way for next-generation information and energy-storage devices with enhanced performance, scalability, and manufacturability.

cond-mat.mtrl-sci↗

arXiv2023

Discovery of a Single-Band Mott Insulator in a van der Waals Flat-Band Compound

The Mott insulator provides an excellent foundation for exploring a wide range of strongly correlated physical phenomena, such as high-temperature superconductivity, quantum spin liquid, and colossal magnetoresistance. A Mott insulator with the simplest degree of freedom is an ideal and highly desirable system for studying the fundamental physics of Mottness. In this study, we have unambiguously identified such an anticipated Mott insulator in a van der Waals layered compound Nb3Cl8. In the high-temperature phase, where interlayer coupling is negligible, density functional theory calculations for the monolayer of Nb3Cl8 suggest a half-filled flat band at the Fermi level, whereas angle-resolved photoemission spectroscopy experiments observe a large gap. This observation is perfectly reproduced by dynamical mean-field theory calculations considering strong electron correlations, indicating a correlation-driven Mott insulator state. Since this half-filled band derived from a single 2a1 orbital is isolated from all other bands, the monolayer of Nb3Cl8 is an ideal realization of the celebrated single-band Hubbard model. Upon decreasing the temperature, the bulk system undergoes a phase transition, where structural changes significantly enhance the interlayer coupling. This results in a bonding-antibonding splitting in the Hubbard bands, while the Mott gap remains dominant. Our discovery provides a simple and seminal model system for investigating Mott physics and other emerging correlated states.

cond-mat.str-el↗

arXiv2022

Strong nonlinear optical response and transient symmetry switching in Type-II Weyl semimetal $β$-WP2

The topological Weyl semimetals with peculiar band structure exhibit novel nonlinear optical enhancement phenomena even for light at optical wavelengths. While many intriguing nonlinear optical effects were constantly uncovered in type-I semimetals, few experimental works focused on basic nonlinear optical properties in type-II Weyl semimetals. Here we perform a fundamental static and time-resolved second harmonic generation (SHG) on the three dimensional Type-II Weyl semimetal candidate $β$-WP$_2$. Although $β$-WP$_2$ exhibits extremely high conductivity and an extraordinarily large mean free path, the second harmonic generation is unscreened by conduction electrons, we observed rather strong SHG response compared to non-topological polar metals and archetypal ferroelectric insulators. Additionally, our time-resolved SHG experiment traces ultrafast symmetry switching and reveals that polar metal $β$-WP$_2$ tends to form inversion symmetric metastable state after photo-excitation. Intense femtosecond laser pulse could optically drive symmetry switching and tune nonlinear optical response on ultrafast timescales although the interlayer coupling of $β$-WP$_2$ is very strong. Our work is illuminating for the polar metal nonlinear optics and potential ultrafast topological optoelectronic applications.

cond-mat.mtrl-sci↗

arXiv2014

Temperature-driven band inversion in Pb$_{0.77}$Sn$_{0.23}$Se: Optical and Hall-effect studies

Optical and Hall-effect measurements have been performed on single crystals of Pb$_{0.77}$Sn$_{0.23}$Se, a IV-VI mixed chalcogenide. The temperature dependent (10--300 K) reflectance was measured over 40--7000 cm$^{-1}$ (5--870 meV) with an extension to 15,500 cm$^{-1}$ (1.92 eV) at room temperature. The reflectance was fit to the Drude-Lorentz model using a single Drude component and several Lorentz oscillators. The optical properties at the measured temperatures were estimated via Kramers-Kronig analysis as well as by the Drude-Lorentz fit. The carriers were p-type with the carrier density determined by Hall measurements. A signature of valence intraband transition is found in the low-energy optical spectra. It is found that the valence-conduction band transition energy as well as the free carrier effective mass reach minimum values at 100 K, suggesting temperature-driven band inversion in the material. Density function theory calculation for the electronic band structure also make similar predictions.

cond-mat.str-el↗