arXiv subjects

Zhiheng Lv

Publications and source records attributed to Zhiheng Lv.

4 recordsLinked to original sources

arXiv2026

Spin-Axis-Layer Locking for Intrinsic Bipolar Altermagnetic Semiconductors: Proof-of-Concept in Bilayer CuBr2

Electrical control of spin and magnetic sublattice degrees of freedom is essential for multifunctional and low-power spintronic devices. Bipolar altermagnetic semiconductors (BAMSs)-characterized by opposite spin polarizations at the valence and conduction band edges-offer such control, yet known systems require external strain and sizable valley polarization for gate-tunable switching. Here, we propose a universal spin-axis-layer locking (SALL) paradigm to overcome these limitations. By stacking two quasi-1D ferromagnetic monolayers with a 90 degrees twist, the bilayer reconstructs altermagnetic symmetry, yielding an intrinsic BAMS state where carrier spin is locked to specific layers and transport directions. Using synthesized CuBr2 monolayers as proof-of-concept, we demonstrate via first-principles calculations a robust BAMS state. Electrostatic gating enables simultaneous, reversible switching of carrier type, spin, and active layer, generating fully spin-polarized axial charge currents and directionally controllable pure spin currents with near-unity charge-to-spin conversion efficiency. This SALL model establishes a versatile, strain-independent strategy for advanced all-electrical altermagnetic devices.

cond-mat.mtrl-sci↗

arXiv2026

Topological Tunneling Magnetoresistance Driven by Type-II Weyl-Like States in the Room-Temperature Half-Metal Mn2PC Monolayer

We predict the tetragonal Mn2PC monolayer to be a room-temperature ferromagnetic half-metal with a Curie temperature of 554 K. The spin-up channel hosts type-II Weyl-like crossings at the Fermi level with highly anisotropic band dispersion, whereas the spin-down channel is a wide-gap semiconductor. Topological edge states obtained from tight-binding calculations confirm the non-trivial bulk topology. Spin-orbit coupling opens a small gap of 11.2 meV at the Weyl-like crossings, generating pronounced Berry curvature and a sizable anomalous Hall conductivity near the Fermi level. Based on these properties, we propose topological tunneling magnetoresistance in a Mn2PC-based magnetic tunnel junction: the parallel configuration conducts through fully spin-polarized Weyl-like carriers, while the antiparallel configuration is suppressed by the half-metallic gap, yielding a giant magnetoresistance ratio. The concurrent anomalous Hall effect in the conducting state provides an experimentally accessible signature of the topological carriers. These results identify the Mn2PC monolayer as a promising platform for room-temperature topological spintronic devices.

cond-mat.other↗

arXiv2024

Single-Spin Waved-Brim Flat-Top Hat in the Band Edge of GdIH Monolayer

Exotic electronic bands, such as flat bands, linear crossing bands, spontaneously valley- or spin-polarized bands, in two-dimensional materials have been the hot topics in condensed matter physics. Herein, we first propose a general dispersion model for possible hat-like electronic bands, and then identify an intriguing single-spin \emph{waved-brim flat-top hat} in the valence band edge of a stable ferromagnetic semiconducting electrene (i.e., Janus GdIH monolayer), which can be well described by a simplified two-bands Hamiltonian model. Specifically, the hat-band has a waved brim with six valleys along the boundary of the first Brillouin zone; meanwhile it holds a flat top close to the Fermi level, resulting in the emergence of single-spin van Hove singularities divergence and Lifshitz transitions. Owing to the breaking of both time-reversal and space inversion symmetries, a sizable spontaneous valley polarization is formed between the adjacent brim valleys, which provides the opportunity to realize the high-temperature anomalous valley Hall effect. Particularly, via modest strains and carriers doping, various conductive bipolar-states (spin-up vs. spin-down, K valley vs. $-$K valley, and ultra-low-speed vs. ultra-high-speed) can be modulated out from the distorted waved-brim flat-top hat of GdIH ML.

cond-mat.mtrl-sci↗

arXiv2022

Tetragonal Mexican-Hat Dispersion and Switchable Half-Metal State with Multiple Anisotropic Weyl Fermions in Penta-Graphene

In past decades, the ever-expanding library of 2D carbon allotropes has yielded a broad range of exotic properties for the future carbon-based electronics. However, the known allotropes are all intrinsic nonmagnetic due to the paired valence electrons configuration. Based on the reported 2D carbon structure database and first-principles calculations, herein we demonstrate that inherent ferromagnetism can be obtained in the prominent allotrope, penta-graphene, which has an unique Mexican-hat valence band edge, giving rise to van Hove singularities and electronic instability. Induced by modest hole-doping, being achievable in electrolyte gate, the semiconducting pentagraphene can transform into different ferromagnetic half-metals with room temperature stability and switchable spin directions. In particular, multiple anisotropic Weyl states, including type-I and type-II Weyl cones and hybrid quasi Weyl nodal loop, can be found in a sizable energy window of spin-down half-metal under proper strains. These findings not only identify a promising carbon allotrope to obtain the inherent magnetism for carbon-based spintronic devices, but highlight the possibility to realize different Weyl states by combining the electronic and mechanical means as well.

cond-mat.mtrl-sci↗