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Zhihui Qin

Publications and source records attributed to Zhihui Qin.

14 recordsLinked to original sources

Visualizing flat-band spatial renormalization in rhombohedral graphene superlattices

Rhombohedral graphene/hBN moir\'e superlattices exhibit flat-band-driven emergent phases, including superconductivity and the fractional quantum anomalous Hall effect (FQAHE), yet the microscopic role of the moir\'e potential remains unclear. Here, using scanning tunneling microscopy, we visualize moir\'e-modulated spatial renormalization of flat bands in rhombohedral pentalayer and tetralayer graphene/hBN superlattices. We observe spatially hierarchical filling, manifested as periodic energy shifts of the flat bands at the moir\'e scale, leading to spatial reshaping of correlated states in the interacting regime. Remarkably, this modulation vanishes below a ~10 nm moir\'e period--the same threshold below which the FQAHE is absent. Theoretical modeling attributes this mechanism to atomic-corrugation-induced charge redistribution. Our work provides real-space visualization of moir\'e-engineered flat-band reconstruction, resolving a key link between moir\'e periodic potential and emergent topological order.

cond-mat.mes-hall

Kagome goldene with flat bands and Dirac nodal line fermions via line-graph epitaxy

The kagome lattice has emerged as a promising platform for investigating exotic quantum phases. However, achieving a single-atomic-layer kagome lattice in elemental materials remains a significant challenge. Here, we introduce line-graph epitaxy, a novel approach that enables the atomic-scale synthesis of goldene, a monolayer of elemental gold atoms arranged in a kagome lattice. Through scanning tunneling microscopy/spectroscopy (STM/STS), and density functional theory (DFT) calculations, we demonstrate the formation of kagome goldene, featuring a flat band with a van Hove singularity approximately 1.1 eV below the Fermi level, signaling strong electron correlation effects. Notably, the flat band is disrupted at the zigzag edges of goldene nanoflakes, revealing substantial edge effects. Furthermore, our calculations show that weak interlayer interactions between goldene and the underlying Au2Ge substrate generate dual Dirac nodal lines through a proximity effect. These findings offer not only a novel strategy for constructing elemental kagome lattices, but also a generalizable framework for fabricating and controlling line-graph materials. This research advances the exploration of quantum phases driven by strong correlations and the design of materials for next-generation quantum technologies.

cond-mat.mes-hall

Micro-tip manipulated origami for robust twisted few-layer graphene

Twisted few-layer graphene (tFLG) has emerged as an ideal model system for investigating novel strongly correlated and topological phenomena. However, the experimental construction of tFLG with high structural stability is still challenging. Here, we introduce a highly accessible method for fabricating robust tFLG by polymer micro-tip manipulated origami. Through using a self-prepared polymer micro-tip, which is composed of multiple dimethylpolysiloxane, poly(vinyl chloride), and graphite sheets, to fold graphene layers, we fabricated tFLG with different twist angles (0°-30°) and various layers, including twisted bilayers (1+1), twisted double-bilayers (2+2), twisted double-trilayers (3+3), and thicker layers. Even ABC-stacked tFLG were created, such as twisted ABC/ABC and ABC/ABA graphene coexisting in an ABC-ABA domain wall region. We found that the origami-fabricated tFLG exhibits high stability against thermal and mechanical perturbations including heating and transferring, which could be attributed to its special folding and tearing structures. Moreover, based on the rich types of samples, we revealed twist-angle and stacking-order dependent Raman characteristics of tFLG, which is valuable for understanding the stacking-modulated phonon spectroscopy. Our experiments provide a simple and efficient approach to construct structurally robust tFLG, paving the way for the study of highly stable twisted van der Waals heterostructures.

cond-mat.mes-hall

Promoting and imaging intervalley coherent order in rhombohedral tetralayer graphene on MoS2

Multilayer rhombohedral graphene (RG) has recently emerged as a new, structurally simple flat-band system, which facilitates the exploration of interaction-driven correlation states with highly ordered electron arrangements. Despite a variety of many-body order behaviors observed in RG by transport measurements, the direct microscopic visualization of such correlated phases in real space is still lacking. Here, we show the discovery of a robust intervalley coherent order, a long-predicted ground state in RG, at 77 K in tetralayer RG placed on MoS2 via imaging atomic-scale spatial reconstruction of wave functions for correlated states. By using scanning tunnelling microscopy, we observe spectroscopic signatures of electronic correlations at partially filled flat bands, where distinct splitting appears. At ~60% and ~70% fillings of the flat bands, we visualize atomic-scale reconstruction patterns with a 3 x 3 supercell on graphene lattice at liquid nitrogen temperature, which indicates a robust intervalley coherent phase of the interacting electrons. The 3 x 3 pattern is observed in MoS2-supported RG, while it is absent in hBN-based ones under the same experimental conditions, suggesting the significant influence of spin-orbit proximity effect. Our results provide microscopic insights into the correlated phases in tetralayer RG and highlight the significant potential for realizing highly accessible collective phenomena through Van der Waals proximity.

cond-mat.mes-hall

Layer-dependent evolution of electronic structures and correlations in rhombohedral multilayer graphene

The recent discovery of superconductivity and magnetism in trilayer rhombohedral graphene (RG) establishes an ideal, untwisted platform to study strong correlation electronic phenomena. However, the correlated effects in multilayer RG have received limited attention, and, particularly, the evolution of the correlations with increasing layer number remains an unresolved question. Here, we show the observation of layer-dependent electronic structures and correlations, under surprising liquid nitrogen temperature, in RG multilayers from 3 to 9 layers by using scanning tunneling microscopy and spectroscopy. We explicitly determine layer-enhanced low-energy flat bands and interlayer coupling strengths. The former directly demonstrates the further flattening of low-energy bands in thicker RG, and the latter indicates the presence of varying interlayer interactions in RG multilayers. Moreover, we find significant splittings of the flat bands, ranging from ~50-80 meV, at 77 K when they are partially filled, indicating the emergence of interaction-induced strongly correlated states. Particularly, the strength of the correlated states is notably enhanced in thicker RG and reaches its maximum in the six-layer, validating directly theoretical predictions and establishing abundant new candidates for strongly correlated systems. Our results provide valuable insights into the layer dependence of the electronic properties in RG and demonstrate it as a suitable system for investigating robust and highly accessible correlated phases.

cond-mat.mes-hall

Nanopore-patterned CuSe drives the realization of PbSe-CuSe lateral heterostructure

Monolayer PbSe has been predicted to be a two-dimensional (2D) topological crystalline insulator (TCI) with crystalline symmetry-protected Dirac-cone-like edge states. Recently, few-layered epitaxial PbSe has been grown on the SrTiO3 substrate successfully, but the corresponding signature of the TCI was only observed for films not thinner than seven monolayers, largely due to interfacial strain. Here, we demonstrate a two-step method based on molecular beam epitaxy for the growth of the PbSe-CuSe lateral heterostructure on the Cu(111) substrate, in which we observe a nanopore patterned CuSe layer that acts as the template for lateral epitaxial growth of PbSe. This further results in a monolayer PbSe-CuSe lateral heterostructure with an atomically sharp interface. Scanning tunneling microscopy and spectroscopy measurements reveal a four-fold symmetric square lattice of such monolayer PbSe with a quasi-particle band gap of 1.8 eV, a value highly comparable with the theoretical value of freestanding PbSe. The weak monolayer-substrate interaction is further supported by both density functional theory (DFT) and projected crystal orbital Hamilton population, with the former predicting the monolayer's anti-bond state to reside below the Fermi level. Our work demonstrates a practical strategy to fabricate a high-quality in-plane heterostructure, involving a monolayer TCI, which is viable for further exploration of the topology-derived quantum physics and phenomena in the monolayer limit.

cond-mat.mtrl-sci

Two-dimensional germanium islands with Dirac signature on Ag2Ge surface alloy

Two-dimensional (2D) Dirac materials have attracted intense research efforts due to their promise for applications ranging from field-effect transistors and low-power electronics to fault-tolerant quantum computation. One key challenge is to fabricate 2D Dirac materials hosting Dirac electrons. Here, monolayer germanene is successfully fabricated on a Ag2Ge surface alloy. Scanning tunneling spectroscopy measurements revealed a linear energy dispersion relation. The latter was supported by density functional theory calculations. These results demonstrate that monolayer germanene can be realistically fabricated on a Ag2Ge surface alloy. The finding opens the door to exploration and study of 2D Dirac material physics and device applications.

cond-mat.mtrl-sci

Native Pb vacancy defects induced p-type characteristic in epitaxial monolayer PbSe

PbSe, a predicted two-dimensional (2D) topological crystalline insulator (TCI) in the monolayer limit, possess excellent thermoelectric and infrared optical properties. Native defects in PbSe take a crucial role for the applications. However, little attention has been paid to the defect induced doping characteristics. Here, we provide an experimental and theoretical investigation of defects induced p-type characteristic on epitaxial monolayer PbSe on Au(111). Scanning tunneling microscopy (STM) measurements demonstrate an epitaxial PbSe monolayer with a fourfold symmetric lattice. Combined scanning tunneling spectroscopy (STS) and density functional theory (DFT) calculations reveal a quasi-particle bandgap of 0.8eV of PbSe. STM results unveil that there are two types of defects on the surface, one is related the vacancies of Pb atoms and the other is the replacement of the absent Se atoms by Pb. Corresponding theoretical optimization confirms the structures of the defects. More importantly, both STS measurements and DFT calculations give evidence that the Pb vacancies move the Fermi energy inside the valence band and produce extra holes, leading to p-type characteristics of PbSe. Our work provides effective information for the future research of device performance based on PbSe films.

cond-mat.mtrl-sci

Moiré-induced bandgap tuning by varying electric dipole in InSe/CuSe vertical heterostructure

The stacked two layered materials with a lattice constant mismatch and/or with twist angle relative to each other can create a moiré pattern, modulating the electronic properties of the pristine materials. Here, we combine scanning tunneling microscopy/spectroscopy and density functional theory calculations to investigate the moiré potential induced bandgap tuning in InSe/CuSe vertical heterostructure synthesized by a two-step of molecular beam epitaxy. Scanning tunneling microscopy measurements demonstrate the heterostructure with a superlattice periodicity of ~3.48nm and a twist angle of about 11° between the monolayers. Scanning tunneling spectroscopy record on the different stacking sites of the heterostructure reveals the bandgap of the InSe is location-dependent and a variation of 400 meV is observed. Density functional theory calculations reveal that the moiré-induce electric dipole in the monolayer InSe is the key factor for tuning the bandgap. Besides, charge transfer between CuSe and InSe also contributes to the bandgap variation due to its stacking related. We also show that the moiré potential not only can tune the bandgap of InSe but also can vanish the Dirac nodal line of CuSe in some stackings. Our explorations provide valuable information in understanding the electronic properties of the twodimensional moiré materials.

cond-mat.mtrl-sci

Direct observation of moiré flat-band breakdown at the edge of magic-angle twisted bilayer graphene

Low-energy moiré flat bands in magic-angle twisted bilayer graphene (tBG) have demonstrated incredible potentials to exhibit rich exotic quantum phenomena. Theoretically, the moiré flat bands of tBG are based on the extended structures, i.e., the moiré patterns with periodic boundary conditions. However, a fundamental question of whether the flat bands can exist in the graphene moiré patterns with a reduced structure symmetry, such as sample edges, remains unanswered. Here, via scanning tunneling microscopy and spectroscopy, we study the local electronic properties of a magic-angle tBG near the sample terminated edge and report a direct observation of breakdown of the moiré flat bands. We show that the moiré electronic structures, including the low-energy flat bands, can sufficiently exist in a complete moiré spot, i.e., a moiré supercell, right at the edge even the translational symmetry of the moiré patterns is broken in one direction. However, the flat-band characteristic is obviously absent in the incomplete moiré spots that are partly terminated by the edge. Our results indicate that a whole moiré spot is sufficient and indispensable for the generation of the effective moiré flat bands in tBG.

cond-mat.mes-hall

Origami-controlled strain engineering of tunable flat bands and correlated states in folded graphene

Flat electronic bands with tunable structures offer opportunities for the exploitation and manipulation of exotic interacting quantum states. Here, we present a controllable route to construct easily tunable flat bands in folded graphene, by nano origami-controlled strain engineering, and discover correlated states in this system. Via tearing and folding graphene monolayer at arbitrary step edges with scanning tunneling microscope manipulation, we create strain-induced pseudo-magnetic fields as well as resulting flat electronic bands in the curved edges of folded graphene. We show that the intensity of the pseudo-magnetic field can be readily tuned by changing the width of the folding edge due to the edge-width-dependent lattice deformation, leading to the well adjustability of the geometry of flat bands in folded graphene. Furthermore, by creating expected dispersionless flat bands using this technique, the correlation-induced splits of flat bands are successfully observed in the density of states when these bands are partially filled. Our experiment provides a feasible and effective pathway to engineer the system with tunable flat band structures, and establishes a new platform that can be used to realize devisable strain and interaction induced quantum phases.

cond-mat.mes-hall

Spectroscopic visualization of flat bands in magic-angle twisted monolayer-bilayer graphene: localization-delocalization coexisting electronic states

Recent transport studies have demonstrated the great potential of twisted monolayer-bilayer graphene (tMBG) as a new platform to host moiré flat bands with a higher tunability than twisted bilayer graphene (tBG). However, a direct visualization of the flat bands in tMBG and its comparison with the ones in tBG remain unexplored. Here, via fabricating on a single sample with exactly the same twist angle of ~1.13°, we present a direct comparative study between tMBG and tBG using scanning tunneling microscopy/spectroscopy. We observe a sharp density of states peak near the Fermi energy in tunneling spectroscopy, confirming unambiguously the existence of flat electronic bands in tMBG. The bandwidth of this flat-band peak is found to be slightly narrower than that of the tBG, validating previous theoretical predictions. Remarkably, by measuring spatially resolved spectroscopy, combined with continuum model calculation, we show that the flat-band states in tMBG exhibit a unique layer-resolved localization-delocalization coexisting feature, which offers an unprecedented possibility to utilize their cooperation on exploring novel correlation phenomena. Our work provides important microscopic insight of flat-band states for better understanding the emergent physics in graphene moiré systems.

cond-mat.mes-hall

A New Algorithm for the Subtraction Games

Subtraction games is a class of combinatorial games. It was solved since the Sprague-Grundy Theory was put forward. This paper described a new algorithm for subtraction games. The new algorithm can find win or lost positions in subtraction games. In addition, it is much simpler than Sprague-Grundy Theory in one pile of the games.

cs.GT

The Period of the subtraction games

Subtraction games is a class of impartial combinatorial games, They with finite subtraction sets are known to have periodic nim-sequences. So people try to find the regular of the games. But for specific of Sprague-Grundy Theory, it is too difficult to find, they obtained some conclusions just by simple observing. This paper used PTFN algorithm to analyze the period of the Subtraction games. It is more suitable than Sprague-Grundy Theory, and this paper obtained four conclusions by PTFN algorithm . This algorithm provide a new direction to study the subtraction games' period.

cs.GT