arXiv subjects

Zhijian Shi

Publications and source records attributed to Zhijian Shi.

5 recordsLinked to original sources

arXiv2025

Coalescence of multiple topological orders in quasi-one-dimensional bismuth halide chains

Topology is being widely adopted to understand and to categorize quantum matter in modern physics. The nexus of topology orders, which engenders distinct quantum phases with benefits to both fundamental research and practical applications for future quantum devices, can be driven by topological phase transition through modulating intrinsic or extrinsic ordering parameters. The conjoined topology, however, is still elusive in experiments due to the lack of suitable material platforms. Here we use scanning tunneling microscopy, angle-resolved photoemission spectroscopy, and theoretical calculations to investigate the doping-driven band structure evolution of a quasi-one-dimensional material system, bismuth halide, which contains rare multiple band inversions in two time-reversal-invariant momenta. According to the unique bulk-boundary correspondence in topological matter, we unveil a composite topological phase, the coexistence of a strong topological phase and a high-order topological phase, evoked by the band inversion associated with topological phase transition in this system. Moreover, we reveal multiple-stage topological phase transitions by varying the halide element ratio: from high-order topology to weak topology, the unusual dual topology, and trivial/weak topology subsequently. Our results not only realize an ideal material platform with composite topology, but also provide an insightful pathway to establish abundant topological phases in the framework of band inversion theory.

cond-mat.mtrl-sci↗

arXiv2025

Emergence of Diverse Topological States in Ge Doped MnBi2Te4

As an ideal platform for studying interplays between symmetry, topology and magnetism, the magnetic topological insulator (MTI) MnBi2Te4 has attracted extensive attentions. However, its strong n-type intrinsic defects hinder the realizations of exotic phenomena. Stimulated by recent discoveries that Ge doping can efficiently tune the position of Fermi level, here we systematically investigate the band evolution and topological phase diagram with doping concentration from MTI MnBi2Te4 to strong topological insulator GeBi2Te4. Different from magnetically doped Bi2Se3, the topology here is determined by competition of two band inversions arising from band folding of two time-reversal invariant momenta between antiferromagnetic and nonmagnetic/ferromagnetic unit cells. By employing a band momentum mapping method, besides the known MTI phase, remarkably, we find two classes of magnetic Dirac semimetal phases at antiferromagnetic state, two classes of Weyl semimetal phases at ferromagnetic state, and an intermediate trivial state at different doping regions. Interestingly, the trivial state can be tuned into a Weyl phase with two coexisting band inversions and extraordinarily long Fermi arcs by a small strain. Our work reveals diverse topological states with intrinsic quantum phenomena can be achieved with great potential for designing future electronic devices.

cond-mat.mtrl-sci↗

arXiv2025

Controllable and Continuous Quantum Phase Transitions in Intrinsic Magnetic Topological Insulator

The intrinsic magnetic topological material MnBi2Te4 has demonstrated great potential to investigate the interplay between topology and magnetism, which opens up new avenues for manipulating non-trivial electronic states and designing quantum devices. However, challenges and controversies remain due to its inevitable n-type antisite defects, hindering the experimental realization of intrinsic magnetic topological phenomena and rendering the precise control of topological phase transitions (TPTs) unachievable. Here, we study a candidate material family, Mn(1-x)GexBi2Te4, in which the heavy n-type doping features are strongly suppressed when the Ge content reaches 0.46, and multiple topological phases are well maintained with the surface Dirac point located near the Fermi level. Based on angle-resolved photoemission spectroscopy, transport measurements, and first-principles calculations, we reveal two magnetism-induced TPTs: the first is antiferromagnetic-ordering-induced transition from strong topological insulator to a magnetic topological insulator as revealed by gap opening of topological surface states; the second is external-magnetic-field-dependent transition from magnetic topological insulator to a Weyl semimetal with the gap reclosed. Our work paves the way for the realization of intrinsic magnetic topological states in MnBi2Te4 family and provides an ideal platform for achieving controllable and continuous TPTs towards future spintronic applications.

cond-mat.mtrl-sci↗

arXiv2024

Mass Acquisition of Dirac Fermions in Bi4I4 by Spontaneous Symmetry Breaking

Massive Dirac fermions, which are essential for realizing novel topological phenomena, are expected to be generated from massless Dirac fermions by breaking the related symmetry, such as time-reversal symmetry (TRS) in topological insulators or crystal symmetry in topological crystalline insulators. Here, we report scanning tunneling microscopy and angle-resolved photoemission spectroscopy studies of α-Bi4I4, which reveals the realization of massive Dirac fermions in the (100) surface states without breaking the TRS. Combined with first-principle calculations, our experimental results indicate that the spontaneous symmetry breaking engenders two nondegenerate edges states at the opposite sides of monolayer Bi4I4 after the structural phase transition, imparting mass to the Dirac fermions after taking the interlayer coupling into account. Our results not only demonstrate the formation of the massive Dirac fermions by spontaneous symmetry breaking, but also imply the potential for the engineering of Dirac fermions for device applications.

cond-mat.mtrl-sci↗

arXiv2023

Towards Layer-Selective Quantum Spin Hall Channels in Weak Topological Insulator Bi4Br2I2

Weak topological insulators, constructed by stacking quantum spin Hall insulators with weak interlayer coupling, offer promising quantum electronic applications through topologically nontrivial edge channels. However, the currently available weak topological insulators are stacks of the same quantum spin Hall layer with translational symmetry in the out-of-plane direction, leading to the absence of the channel degree of freedom for edge states. Here, we study a candidate weak topological insulator, Bi4Br2I2, which is alternately stacked by three different quantum spin Hall insulators, each with tunable topologically non-trivial edge states. Our angle-resolved photoemission spectroscopy and first-principles calculations show that an energy gap opens at the crossing points of different Dirac cones correlated with different layers due to the interlayer interaction. This is essential to achieve the tunability of topological edge states as controlled by varying the chemical potential. Our work offers a perspective for the construction of tunable quantized conductance devices for future spintronic applications.

cond-mat.mtrl-sci↗