arXiv subjects

Zhijie Ma

Publications and source records attributed to Zhijie Ma.

8 recordsLinked to original sources

arXiv2026

Excitons probe intrinsic flat band Mottness in a van der Waals heterostructure

Excitons provide a sensitive optical probe of electronic correlations in nearby two-dimensional materials, yet their coupling to intrinsic flat-band Mott systems remains largely unexplored. Here we combine gate-tunable optical spectroscopy with first-principles calculations to study monolayer WSe$_2$ in direct contact with the van der Waals Mott insulator Nb$_3$Cl$_8$. The gate evolution of WSe$_2$ excitonic resonances reveals signatures of a correlation-reconstructed Mott gap in Nb$_3$Cl$_8$ that is absent from the single-particle band picture. In the electron-doped regime, the WSe$_2$ 2s Rydberg exciton undergoes a multistage evolution and develops into interlayer attractive and repulsive polaron branches, showing that a Rydberg exciton can be dressed by strongly correlated flat-band electrons in an adjacent Mott layer. Under an out-of-plane magnetic field, spin-polarized Nb$_3$Cl$_8$ states further induce valley-selective exciton coupling, producing a strongly enhanced circular polarization of the WSe$_2$ exciton emission. These results extend exciton-based sensing and exciton-polaron physics to intrinsic flat-band Mott materials, providing an optical route to probe and engineer correlation-driven interfacial quasiparticles.

cond-mat.mtrl-sci↗

arXiv2026

Anderson Lattice in Incommensurate $\bf{Nb_3Cl_8}$/Graphene van der Waals Heterostructures

The periodic Anderson model}, traditionally realized in rare-earth compounds with limited tunability, have hindered systematic exploration of correlated quantum phenomena. Here, we introduce a strategy for {realizing and }engineering {this model} in incommensurate van der Waals heterostructures by coupling a Mott insulator (Nb$_3$Cl$_8$) with itinerant electrons (from monolayer graphene), circumventing strict lattice-matching requirements. Through magnetotransport and slave spin mean-field calculations, we demonstrate the hybridization gap ($Δ\approx30$ meV), gate-tunable metal-insulator transition, and band-selective electron effective mass enhancement, hallmarks of Kondo coherence. The heterostructure exhibits a nearly order-of-magnitude enhancement in the effective electron mass between hybridized and conventional graphene-like regimes, alongside in-plane magnetic field-induced metal-insulator transitions. Top gate-temperature phase mapping reveals competing correlated states, including insulating and hidden-order phases. This work establishes an electrically tunable van der Waals platform for studying correlated states generated by coupling a Mott-insulating layer to an itinerant-electron system, providing a materials route for exploring low-dimensional correlated quantum phases.

cond-mat.str-el↗

arXiv2026

Layer-parity-dependent interfacial coupling in Nb$_3$Cl$_8$/graphene van der Waals heterostructures

Strongly correlated two-dimensional systems provide compelling platforms for investigating exotic quantum phenomena. Niobium chloride (Nb$_3$Cl$_8$), a single-band Mott insulator, exhibits a remarkable out-of-plane polarization in its topmost layer that oscillates with layer parity, manifesting as an odd-even effect. Using atomic force microscopy (AFM) and Kelvin probe force microscopy (KPFM), this layer-parity-dependent polarization can be effectively characterized through surface morphology and potential mapping, enabling the unambiguous identification of different surface phases. We then fabricated dual-gate Hall devices by coupling different surface phases of Nb$_3$Cl$_8$ with monolayer graphene to investigate how the topmost-layer out-of-plane polarization influences interfacial coupling and the resulting transport behavior. Our results reveal significant phase-dependent variations in charge transfer, carrier densities, and hybridization gaps (25.2 meV for Phase 1 and 30.0 meV for Phase 2). Density functional theory calculations corroborate these experimental findings, showing that distinct out-of-plane polarizations in the topmost layer lead to different orbital overlaps and interfacial coupling strengths. These findings highlight the critical importance of surface polarization and orbital orientation in engineering the properties of strongly correlated van der Waals heterostructures.

cond-mat.mtrl-sci↗

arXiv2026

Layer-parity-defined surface polarization in Nb$_3$Cl$_8$ for excitonic modulation at van der Waals interfaces

The intrinsic symmetry breaking in the breathing kagome lattice of layered Nb$_3$Cl$_8$ provides a unique mechanism for realizing electrically polar surfaces. In each monolayer, the trimerization of Nb atoms breaks inversion and mirror symmetries, generating an out-of-plane electric dipole. The AB-stacked $α$ phase arranges adjacent layer dipoles antiferroelectrically, leaving the uncompensated surface polarization strictly governed by layer parity. Here, using atomic force microscopy operated in Kelvin probe force microscopy mode, we directly visualize layer-dependent polarization states in exfoliated Nb$_3$Cl$_8$ flakes and resolve a pronounced odd-even oscillation of the surface electrostatic potential. Beyond this parity-locked antiferroelectric order, we further identify intralayer polar domains in which local atomic reconstructions of the breathing kagome network reverse the out-of-plane dipole of the surface layer, producing ferroelectric-like stacking configurations. By interfacing monolayer MoSe$_2$ with Nb$_3$Cl$_8$, we demonstrate that these surface-polarization textures effectively modulate adjacent excitonic emission through domain-dependent interfacial band alignment and charge transfer. Our findings establish Nb$_3$Cl$_8$ as an intrinsic layer-polarized van der Waals platform and show that layer parity provides powerful structural degree of freedom for programming excitonic and optoelectronic responses at van der Waals interfaces.

cond-mat.mtrl-sci↗

arXiv2026

NTIRE 2026 Challenge on Short-form UGC Video Restoration in the Wild with Generative Models: Datasets, Methods and Results

This paper presents an overview of the NTIRE 2026 Challenge on Short-form UGC Video Restoration in the Wild with Generative Models. This challenge utilizes a new short-form UGC (S-UGC) video restoration benchmark, termed KwaiVIR, which is contributed by USTC and Kuaishou Technology. It contains both synthetically distorted videos and real-world short-form UGC videos in the wild. For this edition, the released data include 200 synthetic training videos, 48 wild training videos, 11 validation videos, and 20 testing videos. The primary goal of this challenge is to establish a strong and practical benchmark for restoring short-form UGC videos under complex real-world degradations, especially in the emerging paradigm of generative-model-based S-UGC video restoration. This challenge has two tracks: (i) the primary track is a subjective track, where the evaluation is based on a user study; (ii) the second track is an objective track. These two tracks enable a comprehensive assessment of restoration quality. In total, 95 teams have registered for this competition. And 12 teams submitted valid final solutions and fact sheets for the testing phase. The submitted methods achieved strong performance on the KwaiVIR benchmark, demonstrating encouraging progress in short-form UGC video restoration in the wild.

cs.CV↗

arXiv2025

Evidence of Mott Insulator with Thermally Induced Melting Behavior in Kagome Compound Nb3Cl8

The kagome lattice provides a playground to explore novel correlated quantum states due to the presence of flat bands in its electronic structure. Recently discovered layered kagome compound Nb3Cl8 has been proposed as a Mott insulator coming from the half-filled flat band. Here we have carried out systematic transport study to uncover the evidence of Mott insulator in Nb3Cl8 thin flakes. Bipolar semiconducting property with Fermi level close to conduction band has been revealed. We have further probed the chemical potential of Nb3Cl8 by tracing the charge neutrality point of the monolayer graphene proximate to Nb3Cl8. The gap of Nb3Cl8 flakes is approximately 1.10 eV at 100 K and shows pronounced temperature dependence, decreasing substantially with increasing temperature to ~0.63 eV at 300 K. The melting behavior of the gapped state is in consistent with theoretically proposed Mott insulator in Nb3Cl8. Our work has demonstrated Nb3Cl8 as a promising platform to study strongly correlated physics at relatively high temperature.

cond-mat.str-el↗

arXiv2024

High-Entropy Enhanced Negative Thermal Expansion Perfomance in Antiperovkites

The negative thermal expansion (NTE) materials, which can act as thermal-expansion compensators to counteract the positive thermal expansion, have great applications merit in precision engineering. However, the exploration of NTE behavior with a wide temperature range has reached its upper ceiling through traditional doping strategies due to composition limitations. The unique sluggish characteristic in phase transition and extended optimization space in recent high entropy systems has great potential to broaden the temperature range in electronic transitions-induced NTE materials. Mn-based anti-perovskites offer an ideal platform for the exploration of high entropy NTE material due to their abundant element selection and controllable NTE performance. In this paper, the high entropy strategy is first introduced to broaden the NTE temperature range by relaxing the abrupt phase transition in Mn-based anti-perovskite nitride. We propose an empirical screening method to synthesize the high-entropy anti-perovskite (HEAP). it is found that magnetic phase separation from anti-ferromagnetic CII to paramagnetic CI surviving in an ultra-wide temperature range of 5K<=T<=350K (Delta_T=345K), revealing a unique sluggish characteristic. Consequently, a remarkable NTE behavior (up to Delta_T=235K, 5K<=T<=240K) with a coefficient of thermal expansion of -4.7x10-6/K, has been obtained in HEAP. It is worth noting that the temperature range is two/three times wider than that of low-entropy systems. The sluggish characteristic has been further experimentally proved to come from disturbed phase transition dynamics due to distortion in atomic spacing and chemical environmental fluctuation observed by the spherical aberration-corrected electron microscope. Our demonstration provides a unique paradigm for broadening the temperature range of NTE materials induced by phase transition through entropy engineering.

cond-mat.mtrl-sci↗

arXiv2017

Accurate gradient computations at interfaces using finite element methods

New finite element methods are proposed for elliptic interface problems in one and two dimensions. The main motivation is not only to get an accurate solution but also an accurate first order derivative at the interface (from each side). The key in 1D is to use the idea from \cite{wheeler1974galerkin}. For 2D interface problems, the idea is to introduce a small tube near the interface and introduce the gradient as part of unknowns, which is similar to a mixed finite element method, except only at the interface. Thus the computational cost is just slightly higher than the standard finite element method. We present rigorous one dimensional analysis, which show second order convergence order for both of the solution and the gradient in 1D. For two dimensional problems, we present numerical results and observe second order convergence for the solution, and super-convergence for the gradient at the interface.

math.NA↗