arXiv subjects

Zhipeng Li

Publications and source records attributed to Zhipeng Li.

64 records · Page 4Linked to original sources

arXiv2019

Magnetic field mixing and splitting of bright and dark excitons in monolayer MoSe2

Monolayers of semiconducting transition metal dichalcogenides (TMDCs) with unique spin-valley contrasting properties and remarkably strong excitonic effects continue to be a subject of intense research interests. These model 2D semiconductors feature two fundamental intravalley excitons species - optically accessible ' bright' excitons with anti-parallel spins and optically inactive 'dark' excitons with parallel spins. For applications exploiting radiative recombination of bright excitons or long lifetime dark excitons, it is essential to understand the radiative character of the exciton ground state and establish the energy separation between the lowest energy bright and dark excitons. Here, we report a direct spectroscopic measure of dark excitons in monolayer MoSe$_2$ encapsulated in hexagonal boron nitride. By applying strong in-plane magnetic field, we induce mixing and splitting of bright and dark exciton branches, which enables an accurate spectroscopic determination of their energies. We confirm the bright character of the exciton ground state separated by a 1.5~meV gap from the higher energy dark exciton state, much smaller compared to the previous theoretical expectations. These findings provide critical information for further improvement of the accurate theoretical description of TMDCs electronic structure.

cond-mat.mes-hall↗

arXiv2019

Emerging Photoluminescence from the Dark-Exciton Phonon Replica in Monolayer WSe2

Tungsten-based monolayer transition metal dichalcogenides host a long-lived dark exciton, an electron-hole pair in a spin-triplet configuration. The long lifetime and unique spin properties of the dark exciton provide exciting opportunities to explore light-matter interactions beyond electric dipole transitions. Here we demonstrate that the coupling of the dark exciton and an optically silent chiral phonon enables the intrinsic photoluminescence of the dark-exciton replica in monolayer WSe2. Gate and magnetic-field dependent PL measurements unveil a circularly-polarized replica peak located below the dark exciton by 21.6 meV, equal to E" phonon energy from Se vibrations. First-principles calculations show that the exciton-phonon interaction selectively couples the spin-forbidden dark exciton to the intravalley spin-allowed bright exciton, permitting the simultaneous emission of a chiral phonon and a circularly-polarized photon. Our discovery and understanding of the phonon replica reveals a chirality dictated emission channel of the phonons and photons, unveiling a new route of manipulating valley-spin.

cond-mat.mes-hall↗

arXiv2018

Excitonic Complexes and Emerging Interlayer Electron-Phonon Coupling in BN Encapsulated Monolayer Semiconductor Alloy: WS0.6Se1.4

Monolayer transition metal dichalcogenides (TMDs) possess superior optical properties, including the valley degree of freedom that can be accessed through the excitation light of certain helicity. While WS2 and WSe2 are known for their excellent valley polarization due to the strong spin-orbit coupling, the optical bandgap is limited by the ability to choose from only these two materials. This limitation can be overcome through the monolayer alloy semiconductor, WS2xSe2(1-x), which promises an atomically thin semiconductor with tunable bandgap. In this work, we show that the high-quality BN encapsulated monolayer WS0.6Se1.4 inherits the superior optical properties of tungsten-based TMDs, including a trion splitting of ~ 6 meV and valley polarization as high as ~60%. In particular, we demonstrate for the first time the emerging and gate-tunable interlayer electron-phonon coupling in the BN/WS0.6Se1.4/BN van der Waals heterostructure, which renders the otherwise optically silent Raman modes visible. In addition, the emerging Raman signals can be drastically enhanced by the resonant coupling to the 2s state of the monolayer WS0.6Se1.4 A exciton. The BN/WS2xSe2(1-x)/BN van der Waals heterostructure with a tunable bandgap thus provides an exciting platform for exploring the valley degree of freedom and emerging excitonic physics in two-dimension.

cond-mat.mes-hall↗

arXiv2018

Communicating Two States in Perovskite Revealed by Time-Resolved Photoluminescence Spectroscopy

Organic-inorganic perovskite as a promising candidate for solar energy harvesting has attracted immense interest for its low-cost preparation and extremely high quantum efficiency. However, the fundamental understanding of the photophysics in perovskite remains elusive. In this work, we have revealed two distinct states in MAPbI3 thin films at low temperature through time-resolved photoluminescence spectroscopy (TRPL). In particular, we observe a photo-induced carrier injection from the high energy (HE) state to the low energy (LE) state which has a longer lifetime. The strong interaction between the two states, evidenced by the injection kinetics, can be sensitively controlled through the excitation power. Understanding the interacting two-states not only sheds light on the long PL lifetime in perovskite but also helps to understand the different behavior of perovskite in response to different excitation power. Further efforts in modifying the low energy state could significantly improve the quantum efficiency and lead to novel application in optoelectronics based on perovskite.

physics.app-ph↗

arXiv2018

Enhanced Light Emission from the Ridge of Two-dimensional InSe Flakes

InSe, a newly rediscovered two-dimensional (2D) semiconductor, possesses superior electrical and optical properties as a direct bandgap semiconductor with high mobility from bulk to atomically thin layers, drastically different from transition metal dichalcogenides (TMDCs) in which the direct bandgap only exists at the single layer limit. However, absorption in InSe is mostly dominated by an out-of-plane dipole contribution which results in the limited absorption of normally incident light which can only excite the in-plane dipole at resonance. To address this challenge, we have explored a unique geometric ridge state of the 2D flake without compromising the sample quality. We observed the enhanced absorption at the ridge over a broad range of excitation frequencies from photocurrent and photoluminescence (PL) measurements. In addition, we have discovered new PL peaks at low temperature due to defect states on the ridge, which can be as much as ~ 60 times stronger than the intrinsic PL peak of InSe. Interestingly, the PL of the defects is highly tunable through an external electrical field, which can be attributed to the Stark effect of the localized defects. InSe ridges thus provide new avenues for manipulating light-matter interaction and defect-engineering which are vitally crucial for novel optoelectronic devices based on 2D semiconductors.

cond-mat.mes-hall↗

arXiv2018

Revealing the Biexciton and Trion-exciton Complexes in BN Encapsulated WSe2

Strong Coulomb interactions in single-layer transition metal dichalcogenides (TMDs) result in the emergence of strongly bound excitons, trions and biexcitons. These excitonic complexes possess the valley degree of freedom, which can be exploited for quantum optoelectronics. However, in contrast to the good understanding of the exciton and trion properties, the binding energy of the biexciton remains elusive, with theoretical calculations and experimental studies reporting discrepant results. In this work, we resolve the conflict by employing low-temperature photoluminescence spectroscopy to identify the biexciton state in BN encapsulated single-layer WSe2. The biexciton state only exists in charge neutral WSe2, which is realized through the control of efficient electrostatic gating. In the lightly electron-doped WSe2, one free electron binds to a biexciton and forms the trion-exciton complex. Improved understanding of the biexciton and trion-exciton complexes paves the way for exploiting the many-body physics in TMDs for novel optoelectronics applications.

cond-mat.mes-hall↗

arXiv2015

Sampling Online Social Networks via Heterogeneous Statistics

Most sampling techniques for online social networks (OSNs) are based on a particular sampling method on a single graph, which is referred to as a statistics. However, various realizing methods on different graphs could possibly be used in the same OSN, and they may lead to different sampling efficiencies, i.e., asymptotic variances. To utilize multiple statistics for accurate measurements, we formulate a mixture sampling problem, through which we construct a mixture unbiased estimator which minimizes asymptotic variance. Given fixed sampling budgets for different statistics, we derive the optimal weights to combine the individual estimators; given fixed total budget, we show that a greedy allocation towards the most efficient statistics is optimal. In practice, the sampling efficiencies of statistics can be quite different for various targets and are unknown before sampling. To solve this problem, we design a two-stage framework which adaptively spends a partial budget to test different statistics and allocates the remaining budget to the inferred best statistics. We show that our two-stage framework is a generalization of 1) randomly choosing a statistics and 2) evenly allocating the total budget among all available statistics, and our adaptive algorithm achieves higher efficiency than these benchmark strategies in theory and experiment.

cs.SI↗

arXiv2009

Effects of Quantum Tunneling in Metal Nano-gap on Surface-Enhanced Raman Scattering

The quantum tunneling effects between two metallic plates are studied using the time dependent density functional theory. Results show that the tunneling is mainly dependent on the separation and the initial local field of the interstice between plates. The smaller separation and larger local field, the easier the electrons tunnels through the interstice. Our numerical calculation shows that when the separation is smaller than 0.6 nm the quantum tunneling dramatically reduce the enhancing ability of interstice between nanoparticles.

cond-mat.mes-hall↗

arXiv2004

Discussion on Benford's Law and its Application

The probability that a number in many naturally occurring tables of numerical data has first significant digit $d$ is predicted by Benford's Law ${\rm Prob} (d) = \log_{10} (1 + {\displaystyle{1\over d}}), d = 1, 2 >..., 9$. Illustrations of Benford's Law from both theoretical and real-life sources on both science and social science areas are shown in detail with some novel ideas and generalizations developed solely by the authors of this paper. Three tests, Chi-Square test, total variation distance, and maximum deviations are adopted to examine the fitness of the datasets to Benford's distribution. Finally, applications of Benford's Law are summarized and explored to reveal the power of this mathematical principle.

math.ST↗

arXiv2004

On Wilson's Theorem and Polignac Conjecture

We introduce Wilson's theorem and Clement's result and present a necessary and sufficient condition for p and p+2k to be primes where k is a positive integer. By using Simiov's Theorem, we derive an improved version of Clement's result and characterizations of Polignac twin primes which parallel previous characterizations.

math.NT↗