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Zhiting Gao

Publications and source records attributed to Zhiting Gao.

5 recordsLinked to original sources

MotionFlux: Efficient Text-Guided Motion Generation through Rectified Flow Matching and Preference Alignment

Motion generation is essential for animating virtual characters and embodied agents. While recent text-driven methods have made significant strides, they often struggle with achieving precise alignment between linguistic descriptions and motion semantics, as well as with the inefficiencies of slow, multi-step inference. To address these issues, we introduce TMR++ Aligned Preference Optimization (TAPO), an innovative framework that aligns subtle motion variations with textual modifiers and incorporates iterative adjustments to reinforce semantic grounding. To further enable real-time synthesis, we propose MotionFLUX, a high-speed generation framework based on deterministic rectified flow matching. Unlike traditional diffusion models, which require hundreds of denoising steps, MotionFLUX constructs optimal transport paths between noise distributions and motion spaces, facilitating real-time synthesis. The linearized probability paths reduce the need for multi-step sampling typical of sequential methods, significantly accelerating inference time without sacrificing motion quality. Experimental results demonstrate that, together, TAPO and MotionFLUX form a unified system that outperforms state-of-the-art approaches in both semantic consistency and motion quality, while also accelerating generation speed. The code and pretrained models will be released.

cs.CV↗

Towards the Quantized Anomalous Hall effect in AlO$_x$-capped MnBi$_2$Te$_4$

The quantum anomalous Hall effect in layered antiferromagnet MnBi$_2$Te$_4$ harbors a rich interplay between magnetism and topology, holding a significant promise for low-power electronic devices and topological antiferromagnetic spintronics. In recent years, MnBi$_2$Te$_4$ has garnered considerable attention as the only known material to exhibit the antiferromagnetic quantum anomalous Hall effect. However, this field faces significant challenges as realizing quantized transport at zero magnetic fields depends critically on fabricating high-quality device. In this article, we address the detrimental influences of fabrication on MnBi$_2$Te$_4$ by simply depositing an AlO$_x$ thin layer on the surface prior to fabrications. Optical contrast and magnetotransport measurements on over 50 samples demonstrate that AlO$_x$ can effectively preserve the pristine state of the samples and significantly enhance the anomalous Hall effect towards quantization. Scaling analysis reveals the Berry curvature dominated mechanism of the anomalous Hall effect at various magnetic configurations. By adjusting the gate voltage, we uncover a gate independent antiferromagnetism in MnBi$_2$Te$_4$. Our experiment not only pave the way for fabricating high-quality transport devices but also advance the exploration of exotic quantum physics in 2D materials.

cond-mat.mtrl-sci↗

Gate Tunable Asymmetric Ozone Adsorption on Graphene

Molecular adsorption is pivotal in device fabrication and material synthesis for quantum technology. However, elucidating the behavior of physisorption poses technical challenges. Here graphene with ultrahigh sensitivity was utilized to detect ozone adsorption at cryogenic temperatures. Significant hole doping observed in graphene indicates a strong interaction between ozone and graphene. Interestingly, the adsorption exhibits asymmetry with positive and negative gate voltages. The strong affinity of ozone provides a tool to modulate materials and devices, while the gate tunability of adsorption offers new insights into construction and manipulation of oxide quantum materials.

cond-mat.mes-hall↗

Fabrication-induced even-odd discrepancy of magnetotransport in few-layer MnBi$_2$Te$_4$

The van der Waals antiferromagnetic topological insulator MnBi2Te4 represents a promising platform for exploring the layer-dependent magnetism and topological states of matter. Recently observed discrepancies between magnetic and transport properties have aroused controversies concerning the topological nature of MnBi2Te4 in the ground state. In this article, we demonstrate that fabrication can induce mismatched even-odd layer dependent magnetotransport in few-layer MnBi2Te4. We perform a comprehensive study of the magnetotransport properties in 6- and 7-septuple-layer MnBi2Te4, and reveal that both even- and odd-number-layer device can show zero Hall plateau phenomena in zero magnetic field. Importantly, a statistical survey of the optical contrast in more than 200 MnBi2Te4 flakes reveals that the zero Hall plateau in odd-number-layer devices arises from the reduction of the effective thickness during the fabrication, a factor that was rarely noticed in previous studies of 2D materials. Our finding not only provides an explanation to the controversies regarding the discrepancy of the even-odd layer dependent magnetotransport in MnBi2Te4, but also highlights the critical issues concerning the fabrication and characterization of 2D material devices.

cond-mat.mes-hall↗

Gate-controlled neuromorphic functional transition in an electrochemical graphene transistor

Neuromorphic devices have gained significant attention as potential building blocks for the next generation of computing technologies owing to their ability to emulate the functionalities of biological nervous systems. The essential components in artificial neural network such as synapses and neurons are predominantly implemented by dedicated devices with specific functionalities. In this work, we present a gate-controlled transition of neuromorphic functions between artificial neurons and synapses in monolayer graphene transistors that can be employed as memtransistors or synaptic transistors as required. By harnessing the reliability of reversible electrochemical reactions between C atoms and hydrogen ions, the electric conductivity of graphene transistors can be effectively manipulated, resulting in high on/off resistance ratio, well-defined set/reset voltage, and prolonged retention time. Overall, the on-demand switching of neuromorphic functions in a single graphene transistor provides a promising opportunity to develop adaptive neural networks for the upcoming era of artificial intelligence and machine learning.

physics.app-ph↗