arXiv subjects

Zhizhou Yu

Publications and source records attributed to Zhizhou Yu.

12 recordsLinked to original sources

arXiv2023

Unified framework of the microscopic Landau-Lifshitz-Gilbert equation and its application to Skyrmion dynamics

The Landau-Lifshitz-Gilbert (LLG) equation is widely used to describe magnetization dynamics. We develop a unified framework of the microscopic LLG equation based on the nonequilibrium Green's function formalism. We present a unified treatment for expressing the microscopic LLG equation in several limiting cases, including the adiabatic, inertial, and nonadiabatic limits with respect to the precession frequency for a magnetization with fixed magnitude, as well as the spatial adiabatic limit for the magnetization with slow variation in both its magnitude and direction. The coefficients of those terms in the microscopic LLG equation are explicitly expressed in terms of nonequilibrium Green's functions. As a concrete example, this microscopic theory is applied to simulate the dynamics of a magnetic Skyrmion driven by quantum parametric pumping. Our work provides a practical formalism of the microscopic LLG equation for exploring magnetization dynamics.

cond-mat.mes-hall↗

arXiv2021

A brief review of thermal transport in mesoscopic systems from nonequilibrium Green's function approach

With the rapidly increasing integration density and power density in nanoscale electronic devices, the thermal management concerning heat generation and energy harvesting becomes quite crucial. Since phonon is the major heat carrier in semiconductors, thermal transport due to phonons in mesoscopic systems has attracted much attention. In quantum transport studies, the nonequilibrium Green's function (NEGF) method is a versatile and powerful tool that has been developed for several decades. In this review, we will discuss theoretical investigations of thermal transport using the NEGF approach from two aspects. For the aspect of phonon transport, the phonon NEGF method is briefly introduced and its applications on thermal transport in mesoscopic systems including one-dimensional atomic chains, multi-terminal systems, and transient phonon transport are discussed. For the aspect of thermoelectric transport, the caloritronic effects in which the charge, spin, and valley degrees of freedom are manipulated by the temperature gradient are discussed. The time-dependent thermoelectric behavior is also presented in the transient regime within the partitioned scheme based on the NEGF method.

cond-mat.mes-hall↗

arXiv2018

First principles investigation of pressure related quantum transport in pure black phosphorus devices

We propose a first-principles calculation to investigate the pressure-related transport properties of two kinds of pure monolayer black phosphorus (MBP) devices. Numerical results show that semi-conducting MBP can withstand a considerable compression pressure until it is transformed to be a conductor. The pure MBP devices can work as flexible electronic devices, "negative" pressure sensors, and "positive" pressure sensors depending on the chirality of BP and the magnitude of vertical pressure. When pressure is relatively small, the conductance is robust against the stress for zigzag MBP devices, while shows pressure-sensitive properties for armchair MBP devices. The pressure-stable property of zigzag MBP devices implies a good application prospects as flexible electronic devices, however, the distinct negative increase of conductance versus pressure indicates that armchair MBP devices can work as "negative" pressure sensors. When pressure is relatively large, both armchair MBP devices and zigzag MBP devices show favorable properties of "positive" pressure sensors, whose conductivities rise promptly versus pressure. The longer the device, the more the pressure sensitivity. Band alignment analysis and empirical Wentzel$-$Kramers$-$Brillouin (WKB) approximations are also performed to testify the tunneling process of pure MBP devices from first principles calculation.

cond-mat.mtrl-sci↗

arXiv2017

Full-counting statistics of transient energy current in mesoscopic systems

We investigate the full-counting statistics (FCS) of energy flow carried by electrons in the transient regime. Based on two measurement scheme we formulate a non-equilibrium Keldysh Green's function theory to compute the generating function for FCS of energy transport. Specifically, we express the generating function using the path integral along Keldysh contour and obtain exact solution of the generating function using the Grassmann algebra. With this formalism, we calculate the transient energy current and higher order cumulants for both single and double quantum dot (QD) systems in the transient regime. To examine finite bandwidth effect of leads to FCS of energy transport, we have used an exact solvable model with a Lorentizian linewidth where all non-equilibrium Green's functions can be solved exactly in the time domain. It is found that the transient energy current exhibits damped oscillatory behavior. For the single quantum dot system the frequency of oscillation is independent of bandwidth of the leads while the decay rate of the oscillation amplitude is determined by the lifetime of resonant state which increases as the bandwidth decreases. At short times, a universal scaling of maximum amplitude of normalized cumulants is identified for the single QD system. For the double QD system, the damped oscillation of energy current is dominated by Rabi oscillation with frequency approximately proportional to the coupling constant between two quantum dots. In general, the transient energy current increases when the coupling between two QDs is stronger. However, when the interdot coupling is larger than half of the external bias the transient energy current is suppressed significantly. All these results can be understood analytically.

cond-mat.mes-hall↗

arXiv2017

First-principles study on the electronic and transport properties of periodically nitrogen-doped graphene and carbon nanotube superlattices

Prompted by recent reports on $\sqrt{3} \times \sqrt{3}$ graphene superlattices with intrinsic inter-valley interactions, we perform first-principles calculations to investigate the electronic properties of periodically nitrogen-doped graphene and carbon nanotube nanostructures. In these structures, nitrogen atoms substitute one-sixth of the carbon atoms in the pristine hexagonal lattices with exact periodicity to form perfect $\sqrt{3} \times \sqrt{3}$ superlattices of graphene and carbon nanotubes. Multiple nanostructures of $\sqrt{3} \times \sqrt{3}$ graphene ribbons and carbon nanotubes are explored, and all configurations show nonmagnetic and metallic behaviors. The transport properties of $\sqrt{3} \times \sqrt{3}$ graphene and carbon nanotube superlattices are calculated utilizing the non-equilibrium Green's function formalism combined with density functional theory. The transmission spectrum through the pristine and $\sqrt{3} \times \sqrt{3}$ armchair carbon nanotube heterostructure shows quantized behavior under certain circumstances.

cond-mat.mes-hall↗

arXiv2017

Valley Seebeck effect in gate tunable zigzag graphene nanoribbons

We propose, for the first time, a valley Seebeck effect in gate tunable zigzag graphene nanoribbons as a result of the interplay between thermal gradient and valleytronics. A pure valley current is further generated by the thermal gradient as well as the external bias. In a broad temperature range, the pure valley current is found to be linearly dependent on the temperature gradient while it increases with the increasing temperature of one lead for a fixed thermal gradient. A valley field effect transistor (FET) driven by the temperature gradient is proposed that can turn on and off the pure valley current by gate voltage. The threshold gate voltage and on valley current are proportional to the temperature gradient. When the system switches on at positive gate voltage, the pure valley current is nearly independent of gate voltage. The valley transconductance is up to 30 {\mu}S if we take Ampere as the unit of the valley current. This valley FET may find potential application in future valleytronics and valley caloritronics.

cond-mat.mes-hall↗

arXiv2017

Transmission spectra and valley processing of graphene and carbon nanotube superlattices with inter-valley coupling

We numerically investigate the electronic transport properties of graphene nanoribbons and carbon nanotubes with inter-valley coupling, e.g., in \sqrt{3}N \times \sqrt{3}N and 3N \times 3N superlattices. By taking the \sqrt{3} \times \sqrt{3} graphene superlattice as an example, we show that tailoring the bulk graphene superlattice results in rich structural configurations of nanoribbons and nanotubes. After studying the electronic characteristics of the corresponding armchair and zigzag nanoribbon geometries, we find that the linear bands of carbon nanotubes can lead to the Klein tunnelling-like phenomenon, i.e., electrons propagate along tubes without backscattering even in the presence of a barrier. Due to the coupling between K and K' valleys of pristine graphene by \sqrt{3} \times \sqrt{3} supercells,we propose a valley-field-effect transistor based on the armchair carbon nanotube, where the valley polarization of the current can be tuned by applying a gate voltage or varying the length of the armchair carbon nanotubes.

cond-mat.mes-hall↗

arXiv2016

Full-counting statistics of energy transport of molecular junctions in the polaronic regime

We investigate the full-counting statistics (FCS) of energy transport carried by electrons in molecular junctions for the Anderson-Holstein model in the polaronic regime. Using two-time quantum measurement scheme, generating function (GF) for the energy transport is derived and expressed as a Fredholm determinant in terms of Keldysh nonequilibrium Green's function in the time domain. Dressed tunneling approximation is used in decoupling the phonon cloud operator in the polaronic regime. This formalism enables us to analyze the time evolution of energy transport dynamics after a sudden switch-on of the coupling between the dot and the leads towards the stationary state. The steady state energy current cumulant GF in the long time limit is obtained in the energy domain as well. Universal relations for steady state energy current FCS are derived under finite temperature gradient with zero bias and this enables us to express the equilibrium energy current cumulant by a linear combination of lower order cumulants. Behaviors of energy current cumulants in steady state under temperature gradient and external bias are numerically studied and explained. Transient dynamics of energy current cumulants is numerically calculated and analyzed. The universal scaling of normalized transient energy cumulants is found under both temperature gradient and external bias.

cond-mat.mes-hall↗

arXiv2016

Spin-polarized quantum transport properties through flexible phosphorene

We report a first-principles study on the tunnel magnetoresistance (TMR) and spin-injection efficiency (SIE) through phosphorene with nickel electrodes under the mechanical tension and bending on the phosphorene region. Both the TMR and SIE are largely improved under these mechanical deformations. For the uniaxial tension ($\varepsilon_y$) varying from 0 to 15\% applied along the armchair transport ({\it y}-)direction of the phosphorene, the TMR ratio is enhanced with a maximum of 107\% at the $\varepsilon_y=10\%$, while the SIE increases monotonously from 8\% up to 43\% with the increasing of the strain. Under the out-of-plane bending, the TMR overall increases from 7\% to 50\% within the bending ratio of 0-3.9\%, and meanwhile the SIE is largely improved to around 70\%, as compared to that (30\%) of the flat phosphorene. Such behaviors of the TMR and SIE are mainly affected by the transmission of spin-up electrons in the parallel configuration, which is highly depended on the applied mechanical tension and bending. Our results indicate that the phosphorene based tunnel junctions have promising applications in flexible electronics.

cond-mat.mtrl-sci↗

arXiv2016

Order O(1) algorithm for first-principles transient current through open quantum systems

In the study the response time of ultrafast transistor and peak transient current to prevent melt down of nano-chips, the first principles transient current calculation plays an essential role in nanoelectronics. The first principles calculation of transient current through nano-devices for a period of time T is known to be extremely time consuming with the best scaling TN^3 where N is the dimension of the device. In this work, we provide an order O(1) algorithm that reduces the computational complexity to T^0 N^3 for large systems. Benchmark calculation has been done on graphene nanoribbons with N = 10^4 confirming the O(1) scaling. This breakthrough allows us to tackle many large scale transient problems including magnetic tunneling junctions and ferroelectric tunneling junctions that cannot be touched before.

cond-mat.mes-hall↗

arXiv2016

Nonequilibrium spin injection in monolayer black phosphorus

Monolayer black phosphorus (MBP) is an interesting emerging electronic material with a direct band gap and relatively high carrier mobility. In this work we report a theoretical investigation of nonequilibrium spin injection and spin-polarized quantum transport in MBP from ferromagnetic Ni contacts, in two-dimensional magnetic tunneling structures. We investigate physical properties such as the spin injection efficiency, the tunnel magnetoresistance ratio, spin-polarized currents, charge currents and transmission coefficients as a function of external bias voltage, for two different device contact structures where MBP is contacted by Ni(111) and by Ni(100). While both structures are predicted to give respectable spin-polarized quantum transport, the Ni(100)/MBP/Ni(100) trilayer has the superior properties where the spin injection and magnetoresistance ratio maintains almost a constant value against the bias voltage. The nonequilibrium quantum transport phenomenon is understood by analyzing the transmission spectrum at nonequilibrium.

cond-mat.mtrl-sci↗

arXiv2014

Direct tunneling through high-$κ$ amorphous HfO$_2$: effects of chemical modification

We report first principles modeling of quantum tunneling through amorphous HfO$_2$ dielectric layer of metal-oxide-semiconductor (MOS) nanostructures in the form of n-Si/HfO$_2$/Al. In particular we predict that chemically modifying the amorphous HfO$_2$ barrier by doping N and Al atoms in the middle region - far from the two interfaces of the MOS structure, can reduce the gate-to-channel tunnel leakage by more than one order of magnitude. Several other types of modification are found to enhance tunneling or induce substantial band bending in the Si, both are not desired from leakage point of view. By analyzing transmission coefficients and projected density of states, the microscopic physics of electron traversing the tunnel barrier with or without impurity atoms in the high-$κ$ dielectric is revealed.

cond-mat.mtrl-sci↗