arXiv subjects

Zhong Lin

Publications and source records attributed to Zhong Lin.

14 recordsLinked to original sources

arXiv2026

Surface-State-Driven Anomalous Hall Effect in Altermagnetic MnTe Films

Altermagnets have recently emerged as a new class of magnetic materials that combine compensated magnetic order with spin-split electronic band structures. In this work, we employ molecular beam epitaxy to grow MnTe thin films with controlled thickness on InP(111)A substrates. By performing angle-resolved photoemission spectroscopy measurements, we observe a large spin splitting of ~230 meV for bulk bands well below the Fermi level and identify surface states that cross the Fermi level. Electrical transport measurements reveal that a robust anomalous Hall (AH) effect persists down to 2 K and an AH sign reversal occurs near 175 K. By systematically tuning film thickness, growth conditions, and interfacial structure, we demonstrate that the AH response in MnTe films originates from the Berry curvature of surface states rather than from bulk bands. Our first-principles calculations reveal that this surface-state-driven AH effect is imprinted by the bulk altermagnetic order and remains unchanged for terminations with opposite Mn magnetic orientations. Our results establish a unique surface transport probe of bulk altermagnetism, demonstrate interface engineering as an effective route to generate and control the AH effect in altermagnets, and provide a unified understanding of the AH response in altermagentic MnTe films.

cond-mat.mtrl-sci↗

arXiv2025

Configurable antiferromagnetic domains and lateral exchange bias in atomically thin CrPS4

Interfacial exchange coupling between antiferromagnets (AFMs) and ferromagnets (FMs) crucially makes it possible to shift the FM hysteresis, known as exchange bias, and to switch AFM states. Two-dimensional magnets unlock opportunities to combine AFM and FM materials; however, the buried AFM-FM interfaces obtained by stacking remains challenging to understand. Here we demonstrate interfacial control via intralayer exchange coupling in the layered AFM CrPS$_4$, where connected even and odd layers realize pristine lateral interfaces between AFM-like and FM-like regions. We distinguish antiphase even-layer states by scanning nitrogen-vacancy centre (NV) magnetometry due to a weak surface magnetization. This surface magnetization enables control over the even-layer state, with different regions switching at distinct fields due to their own lateral couplings. We toggle three AFM domains adjacent to a FM-like region and demonstrate a tunable multilevel exchange bias. Our nanoscale visualization unveils the microscopic origins of exchange bias and advances single two-dimensional crystals for hybrid AFM-FM technologies.

cond-mat.mes-hall↗

arXiv2024

Continuously tunable uniaxial strain control of van der Waals heterostructure devices

Uniaxial strain has been widely used as a powerful tool for investigating and controlling the properties of quantum materials. However, existing strain techniques have so far mostly been limited to use with bulk crystals. Although recent progress has been made in extending the application of strain to two-dimensional van der Waals (vdW) heterostructures, these techniques have been limited to optical characterization and extremely simple electrical device geometries. Here, we report a piezoelectric-based \textit{in situ} uniaxial strain technique enabling simultaneous electrical transport and optical spectroscopy characterization of dual-gated vdW heterostructure devices. Critically, our technique remains compatible with vdW heterostructure devices of arbitrary complexity fabricated on conventional silicon/silicon dioxide wafer substrates. We demonstrate a large and continuously tunable strain of up to $-0.15\%$ at millikelvin temperatures, with larger strain values also likely achievable. We quantify the strain transmission from the silicon wafer to the vdW heterostructure, and further demonstrate the ability of strain to modify the electronic properties of twisted bilayer graphene. Our technique provides a highly versatile new method for exploring the effect of uniaxial strain on both the electrical and optical properties of vdW heterostructures, and can be easily extended to include additional characterization techniques.

physics.ins-det↗

arXiv2023

Fermi Surface Evolution and Anomalous Hall Effect in an Ideal Type-II Weyl Semimetal

Weyl semimetals (WSMs) are three-dimensional topological materials that exhibit fascinating properties due to the presence of Weyl nodes in their band structure. However, existing WSMs discovered so far often possess multiple pairs of Weyl nodes, posing a challenge in disentangling the contributions to transport phenomena from different energy bands. To overcome this challenge, we have identified field-induced ferromagnetic MnBi$_{2-x}$Sb$_{x}$Te$_{4}$ as an ideal type-II WSM with a single pair of Weyl nodes. By employing a combination of quantum oscillations and high-field Hall measurements, we have resolved the evolution of Fermi-surface sections as the Fermi level is tuned across the charge neutrality point, precisely matching the band structure of an ideal type-II WSM. Furthermore, the anomalous Hall conductivity exhibits a heartbeat-like behavior as the Fermi level is tuned across the Weyl nodes, a unique feature previously predicted for a type-II WSM. Our findings establish MnBi$_{2-x}$Sb$_{x}$Te$_{4}$ as an ideal platform for further investigation into Weyl physics.

cond-mat.mes-hall↗

arXiv2022

Gate-tunable proximity effects in graphene on layered magnetic insulators

The extreme versatility of two-dimensional van der Waals (vdW) materials derives from their ability to exhibit new electronic properties when assembled in proximity with dissimilar crystals. For example, although graphene is inherently non-magnetic, recent work has reported a magnetic proximity effect in graphene interfaced with magnetic substrates, potentially enabling a pathway towards achieving a high-temperature quantum anomalous Hall effect. Here, we investigate heterostructures of graphene and chromium trihalide magnetic insulators (CrI$_3$, CrBr$_3$, and CrCl$_3$). Surprisingly, we are unable to detect a magnetic exchange field in the graphene, but instead discover proximity effects featuring unprecedented gate-tunability. The graphene becomes highly hole-doped due to charge transfer from the neighboring magnetic insulator, and further exhibits a variety of atypical transport features. These include highly extended quantum Hall plateaus, abrupt reversals in the Landau level filling sequence, and hysteresis over at least days-long time scales. In the case of CrI$_3$, we are able to completely suppress the charge transfer and all attendant atypical transport effects by gating. The charge transfer can additionally be altered in a first-order phase transition upon switching the magnetic states of the nearest CrI$_3$ layers. Our results provide a roadmap for exploiting the magnetic proximity effect in graphene, and motivate further experiments with other magnetic insulators.

cond-mat.mes-hall↗

arXiv2021

Electric control of a canted-antiferromagnetic Chern insulator

The interplay between band topology and magnetism can give rise to exotic states of matter. For example, magnetically doped topological insulators can realize a Chern insulator that exhibits quantized Hall resistance at zero magnetic field. While prior works have focused on ferromagnetic systems, little is known about band topology and its manipulation in antiferromagnets. Here, we report that MnBi$_2$Te$_4$ is a rare platform for realizing a canted-antiferromagnetic (cAFM) Chern insulator with electrical control. We show that the Chern insulator state with Chern number $C = 1$ appears as soon as the AFM to canted-AFM phase transition happens. The Chern insulator state is further confirmed by observing the unusual transition of the $C = 1$ state in the cAFM phase to the $C = 2$ orbital quantum Hall states in the magnetic field induced ferromagnetic phase. Near the cAFM-AFM phase boundary, we show that the Chern number can be toggled on and off by applying an electric field alone. We attribute this switching effect to the electrical field tuning of the exchange gap alignment between the top and bottom surfaces. Our work paves the way for future studies on topological cAFM spintronics and facilitates the development of proof-of-concept Chern insulator devices.

cond-mat.mes-hall↗

arXiv2020

Quantum Oscillations in the Field-induced Ferromagnetic State of MnBi$_{2-x}$Sb$_{x}$Te$_{4}$

The intrinsic antiferromagnetic topological insulator MnBi$_{2}$Te$_{4}$ undergoes a metamagnetic transition in a c-axis magnetic field. It has been predicted that ferromagnetic MnBi$_{2}$Te$_{4}$ is an ideal Weyl semimetal with a single pair of Weyl nodes. Here we report measurements of quantum oscillations detected in the field-induced ferromagnetic phase of MnBi$_{2-x}$Sb$_{x}$Te$_{4}$, where Sb substitution tunes the majority carriers from electrons to holes. Single frequency Shubnikov-de Haas oscillations were observed in a wide range of Sb concentrations (0.54 $\leq$ x $\leq$ 1.21). The evolution of the oscillation frequency and the effective mass shows reasonable agreement with the Weyl semimetal band-structure of ferromagnetic MnBi$_{2}$Te$_{4}$ predicted by density functional calculations. Intriguingly, the quantum oscillation frequency shows a strong temperature dependence, indicating that the electronic structure sensitively depends on magnetism.

cond-mat.mtrl-sci↗

arXiv2020

Intertwined Topological and Magnetic Orders in Atomically Thin Chern Insulator MnBi2Te4

The interplay between band topology and magnetic order plays a key role in quantum states of matter. MnBi2Te4, a van der Waals magnet, has recently emerged as an exciting platform for exploring Chern insulator physics. Its layered antiferromagnetic order was predicted to enable even-odd layer-number dependent topological states, supported by promising edge transport measurements. Furthermore, it becomes a Chern insulator when all spins are aligned by an applied magnetic field. However, the evolution of the bulk electronic structure as the magnetic state is continuously tuned and its dependence on layer number remains unexplored. Here, employing multimodal probes, we establish one-to-one correspondence between bulk electronic structure, magnetic state, topological order, and layer thickness in atomically thin MnBi2Te4 devices. As the magnetic state is tuned through the canted magnetic phase, we observe a band crossing, i.e., the closing and reopening of the bulk bandgap, corresponding to the concurrent topological phase transition. Surprisingly, we find that the even- and odd-layer number devices exhibit a similar topological phase transition coupled to magnetic states, distinct from recent theoretical and experimental reports. Our findings shed new light on the interplay between band topology and magnetic order in this newly discovered topological magnet and validate the band crossing with concurrent measurements of topological invariant in a continuously tuned topological phase transition.

cond-mat.mes-hall↗

arXiv2020

Nematic Fluctuations in an Orbital Selective Superconductor Fe$_{1+y}$Te$_{1-x}$Se$_{x}$

We present a systematic study of the nematic fluctuations in the iron chalcogenide superconductor Fe$_{1+y}$Te$_{1-x}$Se$_{x}$ ($0 \leq x \leq 0.53$) using the elastoresistivity technique. Near $x = 0$, in proximity to the double-stripe magnetic order of Fe$_{1+y}$Te, a diverging $B_{1g}$ nematic susceptibility is observed. Upon increasing $x$, despite the absence of magnetic order, the $B_{2g}$ nematic susceptibility increases and becomes dominant, closely following the strength of the $(\pi, \pi)$ spin fluctuations. Over a wide range of compositions ($0.17 \leq x \leq 0.53$), while the $B_{2g}$ nematic susceptibility follows a Curie temperature dependence (with zero Weiss temperature) at low temperatures, it shows deviations from Curie-Weiss behavior for temperatures higher than $50K$. This is the opposite of what is observed in typical iron pnictides, where Curie-Weiss deviations are seen at low temperatures. We attribute this unusual temperature dependence to a loss of coherence of the $d_{xy}$ orbital, which is supported by our theoretical calculations. Our results highlight the importance of orbital differentiation on the nematic properties of iron-based materials.

cond-mat.supr-con↗

arXiv2020

Superconductivity without insulating states in twisted bilayer graphene stabilized by monolayer WSe$_2$

Magic-angle twisted bilayer graphene (TBG), with rotational misalignment close to 1.1$^\circ$, features isolated flat electronic bands that host a rich phase diagram of correlated insulating, superconducting, ferromagnetic, and topological phases. The origins of the correlated insulators and superconductivity, and the interplay between them, are particularly elusive. Both states have been previously observed only for angles within $\pm0.1^\circ$ from the magic-angle value and occur in adjacent or overlapping electron density ranges; nevertheless, it is still unclear how the two states are related. Beyond the twist angle and strain, the dependence of the TBG phase diagram on the alignment and thickness of insulating hexagonal boron nitride (hBN) used to encapsulate the graphene sheets indicates the importance of the microscopic dielectric environment. Here we show that adding an insulating tungsten-diselenide (WSe$_2$) monolayer between hBN and TBG stabilizes superconductivity at twist angles much smaller than the established magic-angle value. For the smallest angle of $\theta$ = 0.79$^\circ$, we still observe clear superconducting signatures, despite the complete absence of the correlated insulating states and vanishing gaps between the dispersive and flat bands. These observations demonstrate that, even though electron correlations may be important, superconductivity in TBG can exist even when TBG exhibits metallic behaviour across the whole range of electron density. Finite-magnetic-field measurements further reveal breaking of the four-fold spin-valley symmetry in the system, consistent with large spin-orbit coupling induced in TBG via proximity to WSe$_2$. Our results highlight the importance of symmetry breaking effects in stabilizing electronic states in TBG and open new avenues for engineering quantum phases in moir\'e systems.

cond-mat.supr-con↗

arXiv2020

2D van der Waals Nanoplatelets with Robust Ferromagnetism

We have synthesized unique colloidal nanoplatelets of the ferromagnetic two-dimensional (2D) van der Waals material CrI3 and have characterized these nanoplatelets structurally, magnetically, and by magnetic circular dichroism spectroscopy. The isolated CrI3 nanoplatelets have lateral dimensions of ~25 nm and ensemble thicknesses of only ~4 nm, corresponding to just a few CrI3 monolayers. Magnetic and magneto-optical measurements demonstrate robust 2D ferromagnetic ordering in these nanoplatelets with Curie temperatures similar to those observed in bulk CrI3, despite the strong spatial confinement. These data also show magnetization steps akin to those observed in micron-sized few-layer 2D sheets and associated with concerted spin-reversal of individual CrI3 layers within few-layer van der Waals stacks. Similar data have also been obtained for CrBr3 and anion-alloyed Cr(I1-xBrx)3 nanoplatelets. These results represent the first example of laterally confined 2D van der Waals ferromagnets of any composition. The demonstration of robust ferromagnetism at nanometer lateral dimensions opens new doors for miniaturization in spintronics devices based on van der Waals ferromagnets.

cond-mat.mtrl-sci↗

arXiv2019

Switching 2D Magnetic States via Pressure Tuning of Layer Stacking

The physical properties of two-dimensional van der Waals (2D vdW) crystals depend sensitively on the interlayer coupling, which is intimately connected to the stacking arrangement and the interlayer spacing. For example, simply changing the twist angle between graphene layers can induce a variety of correlated electronic phases, which can be controlled further in a continuous manner by applying hydrostatic pressure to decrease the interlayer spacing. In the recently discovered 2D magnets, theory suggests that the interlayer exchange coupling strongly depends on layer separation, while the stacking arrangement can even change the sign of the magnetic exchange, thus drastically modifying the ground state. Here, we demonstrate pressure tuning of magnetic order in the 2D magnet CrI3. We probe the magnetic states using tunneling and scanning magnetic circular dichroism microscopy measurements. We find that the interlayer magnetic coupling can be more than doubled by hydrostatic pressure. In bilayer CrI3, pressure induces a transition from layered antiferromagnetic to ferromagnetic phases. In trilayer CrI3, pressure can create coexisting domains of three phases, one ferromagnetic and two distinct antiferromagnetic. The observed changes in magnetic order can be explained by changes in the stacking arrangement. Such coupling between stacking order and magnetism provides ample opportunities for designer magnetic phases and functionalities.

cond-mat.mes-hall↗

arXiv2018

Dynamics of liquid crystal on hexagonal lattice

Nematic liquid crystal (LC) molecules adsorbed on two dimensional materials are aligned along the crystal directions of the hexagonal lattice. It was demonstrated that short electric pulses can reorient the aligned LC molecules in the preferred armchair direction of hexagonal boron nitride (h-BN). Several states with a variety of colors were obtained by changing the direction and strength of the electric pulses. The ab initio calculations based on density functional theory was carried out to determine the favorable adsorption configurations of the LC molecules on the h-BN surface. A non-volatile display, in which pixel resolution can be determined by grains of hexagonal surface, is proposed, which can offer a pathway towards dynamic high-quality pixels with low power consumption, and could define a new paradigm for all non-volatile display applications.

cond-mat.soft↗

arXiv2018

Unique excitonic effects in tungsten disulphide monolayers on two-layer graphene

Light emission in atomically thin heterostructures is known to depend on the type of materials, number and stacking sequence of the constituent layers. Here we show that the thickness of a two-dimensional substrate can be crucial in modulating the light emission. We study the layer-dependent charge transfer in vertical heterostructures built from monolayer tungsten disulphide (WS2) on one- and two-layer epitaxial graphene, unravelling the effect that the interlayer electronic coupling has on the excitonic properties of such heterostructures. We bring evidence that the excitonic properties of WS2 can be effectively tuned by the number of supporting graphene layers. Integrating WS2 monolayers with two-layer graphene leads to a significant enhancement of the photoluminescence response, up to one order of magnitude higher compared to WS2 supported on one-layer graphene. Our findings highlight the importance of substrate engineering when constructing atomically thin layered heterostructures.

cond-mat.mtrl-sci↗