arXiv subjects

Zhongxun Guo

Publications and source records attributed to Zhongxun Guo.

7 recordsLinked to original sources

arXiv2026

Unveiling the impact of anti-site defects in magnetic transitions of few-layer MnBi2Te4 by operando heating

As the first experimentally discovered intrinsic magnetic topological insulator, MnBi2Te4 has attracted widespread attentions, providing a unique platform for the exploration of topological quantum phases, such as quantum anomalous Hall effect and axion insulator state. Despite the increasing number of potential factors affecting samples being identified, obtaining the high-quality device performance with desired topological quantum phases remains a challenge. In this work, by comparing the reflective magnetic circular dichroism (RMCD) of crystals with different defect densities that are characterized by atomically resolved scanning tunneling microscopy, we demonstrate that anti-site defects play an essential role in achieving ideal magnetic states. By measuring RMCD hysteresis loops with operando heating, we find that MnBi2Te4 few-layer samples are highly susceptible to thermal impact, even at temperature as low as 45°C. The magnetic behavior of heating-treated samples is akin to that of samples fabricated into devices, revealing the thermal impact on devices as well. Starting from few-layers with ideal layer-dependent magnetic order, thermal heating leads to the convergence of magnetization and transition fields between odd- and even-layers. The observed heating-induced magnetic evolution can serve as a valuable reference for assessing the sample quality or the density of anti-site defects. Our findings not only point out the long-standing hidden factor that arose controversies in MnBi2Te4, but also pave the way for controllably engineering the topological quantum phenomena.

cond-mat.mtrl-sci↗

arXiv2025

Observation of High-Order Anisotropic Magnetoresistance in a Cubic Ferromagnet

High-order anisotropic magnetoresistance (AMR) is observed up to the 18th harmonic in cubic Fe(001) thin films, overturning the long-standing paradigm that only two- and four-fold terms are symmetry-allowed. Using angle-resolved transport and Fourier analysis, we show that six-fold and higher-order terms are intrinsic, tunable by temperature and thickness, and predicted by crystal symmetry. Microscopically, the two-fold sign reversal arises from a crossover between weak and strong scattering regimes, while high-order terms emerge from the interplay of anisotropic Fermi velocity and relaxation time. Our results establish high-order AMR as a symmetry-prescribed property of cubic ferromagnets, providing critical benchmarks for spin-orbit transport theory and enabling new angular-sensitive spintronic functionalities.

cond-mat.other↗

arXiv2025

Intrinsic layer polarization and multi-flatband transport in non-centrosymmetric mixed-stacked multilayer graphene

Graphene multilayers exhibit electronic spectra that depend sensitively on both the number of layers and their stacking order. Beyond trilayer graphene, mixed stacking sequences (alternating Bernal and rhombohedral layers) give rise to multiple coexisting low-energy bands. Here we investigate ABCBC-stacked pentalayer graphene, a less-studied non-centrosymmetric mixed sequence. This stacking can be regarded as an ABC (rhombohedral) trilayer on top of an AB (Bernal) bilayer, so its low-energy band structure contains both a cubic band and a parabolic band that hybridize. In transport measurements, we observe an intrinsic band gap at charge neutrality whose magnitude changes asymmetrically under an applied perpendicular displacement field. This behavior reflects the spontaneous layer polarization inherent to the broken inversion symmetry and mirror symmetry. By tuning the displacement field and carrier density, we drive multiple Lifshitz transitions in the Fermi surface topology and realize Landau levels with different degeneracies arising from the multi-flatband system. Remarkably, a v = -6 quantum Hall state emerges at an exceptionally low magnetic field (~20 mT), indicating the interplay between spontaneous symmetry breaking and Berry curvatures. Our results establish mixed-stacked multilayer graphene as a tunable platform with various broken symmetries and multiple flatbands, suitable for exploring emergent correlated electronic states.

cond-mat.mes-hall↗

arXiv2025

Cascade of Even-Denominator Fractional Quantum Hall States in Mixed-Stacked Multilayer Graphene

The fractional quantum Hall effect (FQHE), particularly at half-filling of Landau levels, provides a unique window into topological phases hosting non-Abelian excitations. However, experimental platforms simultaneously offering large energy gaps, delicate tunability, and robust non-Abelian signatures remain scarce. Here, we report the observation of a cascade of even-denominator FQH states at filling factors $ν$ = ${-5/2}$, ${-7/2}$, ${-9/2}$, ${-11/2}$, and ${-13/2}$, alongside numerous odd-denominator states in mixed-stacked pentalayer graphene, a previously unexplored system characterized by intertwined quadratic and cubic band dispersions. These even-denominator states, representing the highest filling half-filled states reported so far in the zeroth Landau level (ZLL), emerge from two distinct intra-ZLL and exhibit unprecedented displacement field tunability driven by LL crossings in the hybridized multiband structure. At half fillings, continuous quasiparticle phase transitions between paired FQH states, magnetic Bloch states, and composite Fermi liquids are clearly identified upon tuning external fields. Numerical calculations, revealing characteristic sixfold ground-state degeneracy and chiral graviton spectral analysis, suggest the observed even-denominator FQH states belong to the non-Abelian Moore-Read type. These results establish mixed-stacked multilayer graphene as a rich and versatile crystalline platform for exploring tunable correlated topological phases.

cond-mat.mes-hall↗

arXiv2025

Quantized Topological States and Parity Anomaly in Intrinsic Quantum Anomalous Hall Insulator MnBi2Te4

When thinned down to just a few atomic layers, the layered magnetic topological insulator MnBi2Te4 offers an exceptional platform for exploring a wide range of topological phenomena. In this work, we overcome longstanding challenges in synthesizing high-purity MnBi2Te4 crystals and report the observation of a myriad of quantized topological states in high-quality five-septuple-layer (5-SL) samples under magnetic fields up to 45 Tesla. We show that the nontrivial topology of 5-SL MnBi2Te4, in the presence of Landau quantization, is governed by a generalized topological index rooted in the parity anomaly of Dirac fermions in (2+1) dimensions. The anomaly manifests as an anomalous Landau level, giving rise to gate-tunable helical edge transport. Our results establish high-quality MnBi2Te4 as a robust platform for exploring emergent topological states and for advancing novel quantum device applications.

cond-mat.mes-hall↗

arXiv2019

High-Performance Logic and Memory Devices Based on a Dual-Gated MoS2 Architecture

In this work, we demonstrate a dual-gated (DG) MoS2 field effect transistors (FETs) in which the degraded switching performance of multilayer MoS2 can be compensated by the DG structure. It produces large current density (>100 μA/μm for a monolayer), steep subthreshold swing (SS) (~100 mV/dec for 5 nm thickness), and high on/off current ratio (greater than 107 for 10 nm thickness). Such DG structure not only improves electrostatic control but also provides an extra degree of freedom for manipulating the threshold voltage (VTH) and SS by separately tuning the top and back gate voltages, which are demonstrated in a logic inverter. Dynamic random access memory (DRAM) has a short retention time because of large OFF-state current in the Si MOSFET. Based on our DG MoS2-FETs, and a DRAM unit cell with a long retention time of 1260 ms are realized. A large-scale isolated MoS2 DG-FETs based on CVD-synthesized continuous films is also demonstrated, which shows potential applications for future wafer-scale digital and low-power electronics.

physics.app-ph↗

arXiv2019

MoS$_2$ Dual-gate Transistors with Electrostatically Doped Contacts

Two-dimensional (2D) transition metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS2) have been intensively investigated because of their exclusive physical properties for advanced electronics and optoelectronics. In the present work, we study the MoS2 transistor based on a novel tri-gate device architecture, with dual-gate (Dual-G) in the channel and the buried side-gate (Side-G) for the source/drain regions. All gates can be independently controlled without interference. For a MoS2 sheet with a thickness of 3.6 nm, the Schottky barrier (SB) and non-overlapped channel region can be effectively tuned by electrostatically doping the source/drain regions with Side-G. Thus, the extrinsic resistance can be effectively lowered, and a boost of the ON-state current can be achieved. Meanwhile, the channel control remains efficient under the Dual-G mode, with an ON-OFF current ratio of 3E7 and subthreshold swing of 83 mV/decade. The corresponding band diagram is also discussed to illustrate the device operation mechanism. This novel device structure opens up a new way toward fabrication of high-performance devices based on 2D-TMDs.

physics.app-ph↗