arXiv subjects

Zhucong Xi

Publications and source records attributed to Zhucong Xi.

5 recordsLinked to original sources

arXiv2025

Visualizing metal-mediated nucleation and growth of GaN

Understanding the atomic-scale mechanisms governing metal-mediated nucleation and growth of gallium nitride (GaN) and related alloys is critical for tailoring their structural and functional properties in advanced electronic, optoelectronic, and quantum devices. Using real-time environmental transmission electron microscopy (E-TEM) in conjunction with Gibbs free energy calculations, we elucidate the distinct processes of GaN nucleation and growth from Ga droplet arrays with and without GaN pre-nuclei. For the lowest temperatures, although GaN nucleation at Ga droplet arrays is not observed, GaN growth occurs preferentially at pre-existing GaN nuclei, presumably due to the reduced Gibbs free energy for NH3 decomposition at Ga/GaN interfaces. For intermediate to high temperatures, E-TEM reveals nucleation and growth of GaN from Ga droplets with and without GaN nuclei, with enhanced crystallinity for the GaN nuclei, due to epitaxial templating. These results highlight the critical role of the Ga/GaN interface in facilitating NH3 decomposition and GaN growth, offering fundamental insights into metal-mediated nucleation and growth of GaN and related materials.

cond-mat.mtrl-sci↗

arXiv2025

The role of the solid-melt interface in accelerating the self-catalyzed growth kinetics of III-V semiconductors

Solid-melt interfaces play a pivotal role in governing crystal growth and metal-mediated epitaxy of gallium nitride (GaN) and other semiconductor materials. Using atomistic simulations based on machine-learning interatomic potentials (MLIPs), we uncover that multiple layers of Ga atoms at the GaN-Ga melt interface form structurally ordered and electronically charged configurations that are critical for the growth kinetics of GaN. These ordered layers modulate the free energy landscape (FEL) for N adsorption and substantially reduce the migration barriers for N at the interface compared to a clean GaN surface. Leveraging these interfacial energetics, kinetic Monte Carlo (KMC) simulations reveal that GaN growth follows a diffusion-controlled, layer-by-layer mechanism, with the FEL for N adsorption emerging as the rate-limiting factor. By incorporating facet-specific FELs and the diffusivity/solubility of N in Ga melt, we develop a predictive, fitting-free transport model that estimates facet-dependent growth rates in the range of ~0.01 to 0.04 nm/s, in agreement with experimental growth rates observed in GaN nanoparticles synthesized by Ga-mediated molecular beam epitaxy (MBE). This multiscale framework offers a generalizable and quantitative approach to link atomic-scale ordering and interfacial energetics to macroscopic phenomena, providing actionable insights for the rational design of metal-mediated epitaxial processes.

cond-mat.mtrl-sci↗

arXiv2025

Multiscale Modeling of Vacancy-Cluster Interactions and Solute Clustering Kinetics in Multicomponent Alloys

Prediction of solute clustering kinetics in aged multicomponent alloys requires a quantitative understanding of complex vacancy-cluster interactions across multiple scales. Here, we develop an integrated computational framework combining on-lattice kinetic Monte Carlo (KMC) simulations, absorbing Markov chain models, and mesoscale cluster dynamics (CD) to investigate these interactions in Al-Mg-Zn alloys. The Markov chain model yields vacancy escape times from solute clusters and identifies a two-stage behavior of the vacancy-cluster binding energy. These binding energies are used to estimate residual vacancy concentrations in the Al matrix after quenching, which serve as critical inputs to CD simulations to predict long-term cluster evolution kinetics during natural aging. Our results quantitatively demonstrate the significant impact of quench rate on natural aging kinetics. Results provide insights to guide alloy chemistry, quench rates, and aging time at finite temperature to control the evolution of solute clusters and eventual precipitates in aged multicomponent alloys.

cond-mat.mtrl-sci↗

arXiv2022

Mechanism of Local Lattice Distortion Effects on Vacancy Migration Barriers in FCC Alloys

Accurate prediction of vacancy migration energy barriers, $ΔE_a$, in multi-component alloys is extremely challenging yet critical for the development of diffusional transformation kinetics needed to model alloy behavior in many technological applications. Here, results from $ΔE_a$ and the energy driving force $ΔE$ of many (>1000) vacancy migration events calculated using density functional theory and nudged elastic band method show large changes (~1eV) of $ΔE_a$ in different local chemical environments of the model face-centered cubic Al-Mg-Zn alloys. Due to local lattice distortion effects induced by solute atoms (such as Mg) with different sizes than the matrix element (Al), the changes of $ΔE_a$ for one type of migrating atoms originate primarily from fluctuations of $Δe_a\equiv ΔE_a - \frac{1}{2}ΔE$. To understand the fluctuations, a quartic function is shown to accurately describe the energy landscape of the minimum energy path (MEP) for each vacancy migration event. Analyses of the quartic function show that $Δe_a$ can be approximated with $Δe_a \approx αk_fD^2$, where $α\sim 0.022$ is a constant of all types of migrating atoms. Here $D$ is the distance of a migrating atom between two adjacent equilibrium positions and $k_f$ is the average vibration spring constant of this atom at these two equilibrium positions. $k_f$ and $D$ quantitatively describe the lattice distortion effects on the curvatures and locations of the MEP at its initial and final states in different local chemical environments. We also used the local lattice occupations as inputs to train surrogate models to predict coefficients of the quartic function, which accurately and efficiently output both $ΔE_a$ and $ΔE$ as the necessary inputs for the mesoscale studies of diffusional transformation in Al-Mg-Zn alloys.

cond-mat.mtrl-sci↗

arXiv2021

Formation of a single quasicrystal upon collision of multiple grains

Quasicrystals exhibit long-range order but lack translational symmetry. When grown as single crystals, they possess distinctive and unusual properties owing to the absence of grain boundaries. Unfortunately, conventional methods such as bulk crystal growth or thin film deposition only allow us to synthesize either polycrystalline quasicrystals or quasicrystals that are at most a few centimeters in size. Here, we reveal through real-time and 3D imaging the formation of a single decagonal quasicrystal arising from a hard collision between multiple growing quasicrystals in an Al-Co-Ni liquid. Through corresponding molecular dynamics simulations, we examine the underlying kinetics of quasicrystal coalescence and investigate the effects of initial misorientation between the growing quasicrystalline grains on the formation of grain boundaries. At small misorientation, coalescence occurs following rigid rotation that is facilitated by phasons. Our joint experimental-computational discovery paves the way toward fabrication of single, large-scale quasicrystals for novel applications.

cond-mat.mtrl-sci↗