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Zhuhua Zhang

Publications and source records attributed to Zhuhua Zhang.

17 recordsLinked to original sources

Dual Role of Nb in Defect-Mediated Strength and Ductility of γ-TiAl Alloys

The origin of the superior high-temperature strength of γ-TiAl with high Nb addition remains highly controversial, largely due to the unclear role of Nb atoms. Using large-scale hybrid Monte Carlo and molecular dynamics simulations with a self-developed neural network potential,we show that Nb atoms predominantly occupy Ti sites and form short-range order with neighboring Al atoms, but a non-negligible fraction also occupies Al sites (NbAl) and promotes the formation of antisite defects (TiAl). Both the NbAl and TiAl antisites exceptionally reduce stacking fault energies and facilitate deformation twinning, thereby enhancing plasticity. Meanwhile, these substitutional and antisite defects also increase the Peierls stress of both screw and edge dislocations, which hinders dislocation motion to cause pronounced solid-solution strengthening. This work provides mechanistic insights into the dual role of Nb in enhancing both strength and ductility in γ-TiAl and further offers guidance for defect and composition engineering in advanced alloy systems.

cond-mat.mtrl-sci

Water induced bandgap engineering in nanoribbons of hexagonal boron nitride

Different from hexagonal boron nitride (hBN) sheets, the bandgap of hBN nanoribbons (BNNRs) can be changed by spatial/electrostatic confinement. It has been predicted that a transverse electric field can narrow the bandgap and even cause an insulator-metal transition in BNNRs. However, experimentally introducing an overhigh electric field across the BNNR remains challenging. Here, we theoretically and experimentally demonstrate that water adsorption greatly reduces bandgap of zigzag oriented BNNRs (zBNNRs). Ab initio calculations show that water adsorbed beside the BNNR induces a transverse equivalent electric field of over 2 V/nm thereby reducing its bandgap. Field effect transistors were successfully fabricated from zBNNRs with different widths. The conductance of zBNNRs with adsorbates of water could be tuned over 3 orders in magnitude via electrical field modulation at room temperature. Furthermore, photocurrent response measurements were taken to determine the optical bandgap in zBNNR. Wider zBNNRs exhibit a bandgap down to 1.17 eV. This study yields fundamental insights in new routes toward realizing electronic/optoelectronic devices and circuits based on hexagonal boron nitride.

cond-mat.mtrl-sci

Anomalous strain-dependent thermal conductivity in superelastic screw-dislocated graphites

The design of strain-stable, or even strain-enhanced thermal transport materials is critical for stable operation of high-performance electronic devices. However, most nanomaterials suffer from strain-induced degradation, with even minor tensile strains markedly reducing thermal conductivity. Here, we demonstrate that screw-dislocated graphites (SDGs), recently identified as topological semimetals, display an unusual increase in cross-plane thermal conductivity under both tensile and compressive strains, revealed by high-accuracy machine-learning-potential-driven non-equilibrium molecular dynamics. Notably, SDGs exhibit over 100% enhancement under tensile strains up to 80% along the dislocation axis, arising from strain-induced increase in dislocation interface tilt angle that elongates the effective heat transfer paths. Their thermal conductivity surpasses multilayer graphene by an order of magnitude. An analytical model is further derived linking thermal conductivity to dislocation number and strain, offering a predictive framework for designing strain-tunable screwdislocated structures. These findings highlight SDGs as a promising platform for high-performance electronic and wearable devices with tunable thermal properties.

cond-mat.mtrl-sci

A high-efficiency neuroevolution potential for tobermorite and calcium silicate hydrate systems with ab initio accuracy

Tobermorite and Calcium Silicate Hydrate (C-S-H) systems are indispensable cement materials but still lack a satisfactory interatomic potential with both high accuracy and high computational efficiency for better understanding their mechanical performance. Here, we develop a Neuroevolution Machine Learning Potential (NEP) with Ziegler-Biersack-Littmark hybrid framework for tobermorite and C-S-H systems, which conveys unprecedented efficiency in molecular dynamics simulations with substantially reduced training datasets. Our NEP model achieves prediction accuracy comparable to DFT calculations using just around 300 training structures, significantly fewer than other existing machine learning potentials trained for tobermorite. Critically, the GPU-accelerated NEP computations enable scalable simulations of large tobermorite systems, reaching several thousand atoms per GPU card with high efficiency. We demonstrate the NEP's versatility by accurately predicting mechanical properties, phonon density of states, and thermal conductivity of tobermorite. Furthermore, we extend the NEP application to large-scale simulations of amorphous C-S-H, highlighting its potential for comprehensive analysis of structural and mechanical behaviors under various realistic conditions.

cond-mat.mes-hall

Synthesis of metalloborophene nanoribbons on Cu(110)

Metalloborophene, characterized by the presence of metal-centered boron wheels denoted as M\c{opyright}Bn, has garnered considerable attention in recent years due to its versatile properties and potential applications in fields such as electronics, spintronics, and catalysis. However, the experimental verification of metalloborophene has been challenging, mainly due to the unconventional two-dimensional (2D) boron networks. In this study, we employ scanning tunneling microscopy, X-ray photoelectron spectroscopy, low energy electron diffraction, and first-principles calculations to unveil Cu\c{opyright}B8 metalloborophene nanoribbons formed via spontaneous alloying after the deposition of boron on a heated Cu(110) substrate under ultrahigh vacuum condition. The thermodynamically preferred precursor, the anchoring of boron network to metal atoms, and anisotropic lattice mismatch are identified as pivotal factors in the formation of these metalloborophene nanoribbons. This discovery expands the repertoire of 2D materials and offers a potential pathway for the synthesis of other metalloborophenes.

cond-mat.mtrl-sci

General-purpose machine-learned potential for 16 elemental metals and their alloys

Machine-learned potentials (MLPs) have exhibited remarkable accuracy, yet the lack of general-purpose MLPs for a broad spectrum of elements and their alloys limits their applicability. Here, we present a feasible approach for constructing a unified general-purpose MLP for numerous elements, demonstrated through a model (UNEP-v1) for 16 elemental metals and their alloys. To achieve a complete representation of the chemical space, we show, via principal component analysis and diverse test datasets, that employing one-component and two-component systems suffices. Our unified UNEP-v1 model exhibits superior performance across various physical properties compared to a widely used embedded-atom method potential, while maintaining remarkable efficiency. We demonstrate our approach's effectiveness through reproducing experimentally observed chemical order and stable phases, and large-scale simulations of plasticity and primary radiation damage in MoTaVW alloys. This work represents a significant leap towards a unified general-purpose MLP encompassing the periodic table, with profound implications for materials science.

cond-mat.mtrl-sci

A general-purpose neural network potential for Ti-Al-Nb alloys towards large-scale molecular dynamics with ab initio accuracy

High Nb-containing TiAl alloys exhibit exceptional high-temperature strength and room-temperature ductility, making them widely used in hot-section components of automotive and aerospace engines. However, the lack of accurate interatomic interaction potentials for large-scale modeling severely hampers a comprehensive understanding of the failure mechanism of Ti-Al-Nb alloys and the development of strategies to enhance the mechanical properties. Here, we develop a general-purpose machine-learned potential (MLP) for the Ti-Al-Nb ternary system by combining the neural evolution potentials framework with an active learning scheme. The developed MLP, trained on extensive first-principles datasets, demonstrates remarkable accuracy in predicting various lattice and defect properties, as well as high-temperature characteristics such as thermal expansion and melting point for TiAl systems. Notably, this potential can effectively describe the key effect of Nb doping on stacking fault energies and formation energies. Of practical importance is that our MLP enables large-scale molecular dynamics simulations involving tens of millions of atoms with ab initio accuracy, achieving an outstanding balance between computational speed and accuracy. These results pave the way for studying micro-mechanical behaviors in TiAl lamellar structures and developing high-performance TiAl alloys towards applications at elevated temperatures.

cond-mat.mtrl-sci

Symmetry breaking and anomalous conductivity in a double moiré superlattice

A double moiré superlattice can be realized by stacking three layers of atomically thin two-dimensional materials with designer interlayer twisting or lattice mismatches. In this novel structure, atomic reconstruction of constituent layers could introduce significant modifications to the lattice symmetry and electronic structure at small twist angles. Here, we employ conductive atomic force microscopy (cAFM) to investigate symmetry breaking and local electrical properties in twisted trilayer graphene. We observe clear double moiré superlattices with two distinct moire periods all over the sample. At neighboring domains of the large moiré, the current exhibit either two- or six-fold rotational symmetry, indicating delicate symmetry breaking beyond the rigid model. Moreover, an anomalous current appears at the 'A-A' stacking site of the larger moiré, contradictory to previous observations on twisted bilayer graphene. Both behaviors can be understood by atomic reconstruction, and we also show that the cAFM signal of twisted graphene samples is dominated by the tip-graphene contact resistance that maps the local work function of twisted graphene and the metallic tip qualitatively. Our results unveil cAFM is an effective probe for visualizing atomic reconstruction and symmetry breaking in novel moiré superlattices, which could provide new insights for exploring and manipulating more exotic quantum states based on twisted van der Waals heterostructures.

cond-mat.mes-hall

Unraveling Ultrafast Photoionization in Hexagonal Boron Nitride

The non-linear response of dielectrics to intense, ultrashort electric fields has been a sustained topic of interest for decades with one of its most important applications being femtosecond laser micro/nano-machining. More recently, renewed interests in strong field physics of solids were raised with the advent of mid-infrared femtosecond laser pulses, such as high-order harmonic generation, optical-field-induced currents, etc. All these processes are underpinned by photoionization (PI), namely the electron transfer from the valence to the conduction bands, on a time scale too short for phononic motion to be of relevance. Here, in hexagonal boron nitride, we reveal that the bandgap can be finely manipulated by femtosecond laser pulses as a function of field polarization direction with respect to the lattice, in addition to the field's intensity. It is the modification of bandgap that enables the ultrafast PI processes to take place in dielectrics. We further demonstrate the validity of the Keldysh theory in describing PI in dielectrics in the few TW/cm2 regime.

physics.optics

Defining shapes of 2D-crystals with undefinable edge-energies

The equilibrium shape of crystals is a fundamental property of both aesthetic appeal and practical import. It is also a visible macro-manifestation of the underlying atomic-scale forces and chemical makeup, most conspicuous in two-dimensional (2D) materials of keen current interest. If the crystal surface/edge energy is known for different directions, its shape can be obtained by geometric Wulff construction, a tenet of crystal physics. However, if symmetry is lacking, the crystal edge energy cannot be defined or calculated, so its shape becomes elusive, presenting an insurmountable problem for theory. Here we show how, in fact, one can proceed with "latent edge energies" towards constructive prediction of a unique crystal shape, and demonstrate it for challenging material-examples, like ${\rm SnS}$ of ${\rm C_{2v}}$ symmetry and even ${\rm AgNO_2}$ of ${\rm C_1}$-no symmetry at all.

cond-mat.mtrl-sci

One Dimensional Nearly Free Electron States in Borophene

Two-dimensional boron (borophene) is featured by its structural polymorphs and distinct in-plane anisotropy, opening opportunities to achieve tailored electronic properties by intermixing different phases. Here, using scanning tunneling spectroscopy combined with first-principles calculations, delocalized one-dimensional nearly free electron states (NFE) in the (2,3) or \b{eta}12 borophene sheet on the Ag(111) surface were observed. The NFE states emerge from a line defect in the borophene, manifested as a structural unit of the (2,2) or \c{hi}3 sheet, which creates an in-plane potential well that shifts the states toward the Fermi level. The NFE states are held in the 2D plane of borophene, rather than in the vacuum region as observed in other nanostructures. Furthermore the borophene can provide a rare prototype to further study novel NFE behaviors, which may have potential applications on transport or field emission nanodevices based on boron.

cond-mat.mtrl-sci

Elasticity, Flexibility and Ideal Strength of Borophenes

We study the mechanical properties of two-dimensional (2D) boron, borophenes, by first-principles calculations. The recently synthesized borophene with 1/6 concentration of hollow hexagons (HH) is shown to have in-plane modulus C up to 210 N/m and bending stiffness as low as D = 0.39 eV. Thus, its Foppl-von Karman number per unit area, defined as C/D, reaches 568 nm-2, over twofold higher than graphene's value, establishing the borophene as one of the most flexible materials. Yet, the borophene has a specific modulus of 346 m2/s2 and ideal strengths of 16 N/m, rivaling those (453 m2/s2 and 34 N/m) of graphene. In particular, its structural fluxionality enabled by delocalized multi-center chemical bonding favors structural phase transitions under tension, which result in exceptionally small breaking strains yet highly ductile breaking behavior. These mechanical properties can be further tailored by varying the HH concentration, and the boron sheet without HHs can even be stiffer than graphene against tension. The record high flexibility combined with excellent elasticity in boron sheets can be utilized for designing composites and flexible systems.

cond-mat.mtrl-sci

Controlled Synthesis of Organic/Inorganic van der Waals Solid for Tunable Light-matter Interactions

Van der Waals (vdW) solids, as a new type of artificial materials that consist of alternating layers bonded by weak interactions, have shed light on fascinating optoelectronic device concepts. As a result, a large variety of vdW devices have been engineered via layer-by-layer stacking of two-dimensional materials, although shadowed by the difficulties of fabrication. Alternatively, direct growth of vdW solids has proven as a scalable and swift way, highlighted by the successful synthesis of graphene/h-BN and transition metal dichalcogenides (TMDs) vertical heterostructures from controlled vapor deposition. Here, we realize high-quality organic and inorganic vdW solids, using methylammonium lead halide (CH3NH3PbI3) as the organic part (organic perovskite) and 2D inorganic monolayers as counterparts. By stacking on various 2D monolayers, the vdW solids behave dramatically different in light emission. Our studies demonstrate that h-BN monolayer is a great complement to organic perovskite for preserving its original optical properties. As a result, organic/h-BN vdW solid arrays are patterned for red light emitting. This work paves the way for designing unprecedented vdW solids with great potential for a wide spectrum of applications in optoelectronics.

physics.chem-ph

Intrinsic Magnetism of Grain Boundaries in Two-dimensional Metal Dichalcogenides

Grain boundaries (GBs) are structural imperfections that typically degrade the performance of materials. Here we show that dislocations and GBs in two-dimensional (2D) metal dichalcogenides MX2 (M = Mo, W; X = S, Se) can actually improve the material by giving it a qualitatively new physical property: magnetism. The dislocations studied all have a substantial magnetic moment of ~1 Bohr magneton. In contrast, dislocations in other well-studied 2D materials are typically non-magnetic. GBs composed of pentagon-heptagon pairs interact ferromagnetically and transition from semiconductor to half-metal or metal as a function of tilt angle and/or doping level. When the tilt angle exceeds 47° the structural energetics favor square-octagon pairs and the GB becomes an antiferromagnetic semiconductor. These exceptional magnetic properties arise from an interplay of dislocation-induced localized states, doping, and locally unbalanced stoichiometry. Purposeful engineering of topological GBs may be able to convert MX2 into a promising 2D magnetic semiconductor.

cond-mat.mtrl-sci

Energy-gap modulation of boron nitride nanoribbons by transverse electric fields: First-principles calculations

Systematic ab initio calculations show that the energy gap of boron nitride (BN) nanoribbons (BNNRs) with zigzag or armchair edges can be significantly reduced by a transverse electric field and completely closed at a critical field which decreases with increasing ribbon width. In addition, a distinct gap modulation in the ribbons with zigzag edges is presented when a reversed electric field is applied. In a weak field, the gap reduction of the BNNRs with zigzag edges originates from the field-induced energy level shifts of the spatially separated edge-states, while the gap reduction of the BNNRs with armchair edges arises from the Stark effect. As the field gets stronger, the energy gaps of both types of the BNNRs gradually close due to the field-induced motion of nearly free electron states. Without the applied fields, the energy gap modulation by varying ribbon width is rather limited.

cond-mat.mtrl-sci

Stability and electronic properties of small BN nanotubes

We report the stability and electronic structures of the boron nitride nanotubes (BNNTs) with diameters below 4 A by semi-empirical quantum mechanical molecular dynamics simulations and ab initio calculations. Among them (3,0), (3,1), (2,2), (4,0), (4,1) and (3,2) BNNTs can be stable well over room temperature. These small BNNTs become globally stable when encapsulated in a larger BNNT. It is found that the energy gaps and work functions of these small BNNTs are strongly dependent on their chirality and diameters. The small zigzag BNNTs become desirable semiconductors and have peculiar distribution of nearly free electron states due to strong hybridization effect. When such a small BNNT is inserted in a larger one, the energy gap of the formed double-walled BNNT can even be much reduced due to the coupled effect of wall buckling difference and NFE-pi hybridization.

cond-mat.mtrl-sci

Electronic Properties of Graphene Nanoribbon on Si(001) Substrate

We show by first-principles calculations that the electronic properties of zigzag graphene nanoribbons (Z-GNRs) adsorbed on Si(001) substrate strongly depend on ribbon width and adsorption orientation. Only narrow Z-GNRs with even rows of zigzag chains across their width adsorbed perpendicularly to the Si dimer rows possess an energy gap, while wider Z-GNRs are metallic due to width-dependent interface hybridization. The Z-GNRs can be metastably adsorbed parallel to the Si dimer rows, but show uniform metallic nature independent of ribbon width due to adsorption induced dangling-bond states on the Si surface.

cond-mat.mtrl-sci