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Zi-Huai Zhang

Publications and source records attributed to Zi-Huai Zhang.

15 recordsLinked to original sources

Interface Piezoelectric Loss in Superconducting Qubits

Dissipation remains a central obstacle to improving superconducting quantum circuits, yet the microscopic origins of loss in widely used materials platforms are not fully understood. Here, we report the observation of interface piezoelectricity-induced dissipation in superconducting qubits fabricated on high-resistivity silicon. Our devices use a transmon qubit with a shunt capacitor that simultaneously serves as an interdigital transducer embedded in a surface acoustic wave resonator. By tuning the qubit transition into resonance with discrete mechanical modes, we observe up to a factor-of-two reduction in qubit lifetime, consistent with energy exchange between the qubit and mechanical modes mediated by piezoelectric coupling at the aluminum-silicon interface. Our findings provide direct evidence for interface piezoelectricity as a distinct loss channel in superconducting qubits. Combined with multiphysics simulations, these findings suggest that interface piezoelectric loss can dominate over loss from two-level systems at sufficiently high frequencies.

quant-ph↗

A defect in diamond with millisecond-scale spin relaxation time at room temperature

Spin defects in diamond are promising platforms for quantum sensing. The longest electron spin relaxation times ($T_1$) at room temperature for solid-state defects are observed in nitrogen vacancy centers in diamond, which can reach 6.67 ms, and substitutional nitrogen ("P1 centers") in diamond, which exhibit a $T_1$ of 2 ms. No other solid-state defect has exhibited millisecond-scale spin relaxation times at room temperature thus far. Here, we characterize the spin properties of the WAR5 defect in diamond with pulsed electron spin resonance. The observed $T_1$ is one of the longest for solid-state spin defects: 0.97(27) ms at room temperature and 14.38(19) min at 4 K. The observed coherence time ($T_2$) is 246(7) $μ$s, which can be extended to 6.49(34) ms at 4 K with dynamical decoupling. Furthermore, we demonstrate optical spin polarization with a range of wavelengths from 405 nm to 500 nm and propose potential zero-phonon line candidates.

cond-mat.mtrl-sci↗

Entanglement of a nuclear spin qubit register in silicon photonics

Color centers provide an optical interface to quantum registers based on electron and nuclear spin qubits in solids. The T center in silicon is an emerging spin-photon interface that combines telecom O-band optical transitions and an electron spin in a scalable photonics platform. In this work, we demonstrate the initialization, coherent control, and state readout of a three-qubit register based on the electron spin of a T center coupled to a hydrogen and a silicon nuclear spin. The spin register exhibits spin echo coherence times of $0.41(2)$~ms for the electron spin, $112(12)$~ms for the hydrogen nuclear spin, and $67(7)$~ms for the silicon nuclear spin. We use nuclear-nuclear two-qubit gates to generate entanglement between the two nuclear spins with a fidelity of $F=0.77(3)$ and a coherence time of $T^*_2=2.60(8)$~ms. Our results show that a T center in silicon photonics can realize a multi-qubit register with an optical interface for quantum communication.

quant-ph↗

Observation of Interface Piezoelectricity in Superconducting Devices on Silicon

The evolution of superconducting quantum processors is driven by the need to reduce errors and scale for fault-tolerant computation. Reducing physical qubit error rates requires further advances in the microscopic modeling and control of decoherence mechanisms in superconducting qubits. Piezoelectric interactions contribute to decoherence by mediating energy exchange between microwave photons and acoustic phonons. Centrosymmetric materials like silicon and sapphire do not display piezoelectricity and are the preferred substrates for superconducting qubits. However, the broken centrosymmetry at material interfaces may lead to piezoelectric losses in qubits. While this loss mechanism was predicted two decades ago, interface piezoelectricity has not been experimentally observed in superconducting devices. Here, we report the observation of interface piezoelectricity at an aluminum-silicon junction and show that it constitutes an important loss channel for superconducting devices. We fabricate aluminum interdigital surface acoustic wave transducers on silicon and demonstrate piezoelectric transduction from room temperature to millikelvin temperatures. We find an effective electromechanical coupling factor of $K^2\approx 2 \times 10^{-5}\%$ comparable to weakly piezoelectric substrates. We model the impact of the measured interface piezoelectric response on superconducting qubits and find that the piezoelectric surface loss channel limits qubit quality factors to $Q\sim10^4-10^8$ for designs with different surface participation ratios and electromechanical mode matching. These results identify electromechanical surface losses as a significant dissipation channel for superconducting qubits, and show the need for heterostructure and phononic engineering to minimize errors in next-generation superconducting qubits.

quant-ph↗

A Nanomechanical Atomic Force Qubit

Silicon nanomechanical resonators display ultra-long lifetimes at cryogenic temperatures and microwave frequencies. Achieving quantum control of single-phonons in these devices has so far relied on nonlinearities enabled by coupling to ancillary qubits. In this work, we propose using atomic forces to realize a silicon nanomechanical qubit without coupling to an ancillary qubit. The proposed qubit operates at 60 MHz with a single-phonon level anharmonicity of 5 MHz. We present a circuit quantum acoustodynamics architecture where electromechanical resonators enable dispersive state readout and multi-qubit operations. The combination of strong anharmonicity, ultrahigh mechanical quality factors, and small footprints achievable in this platform could enable quantum-nonlinear phononics for quantum information processing and transduction.

quant-ph↗

Acceptor-induced bulk dielectric loss in superconducting circuits on silicon

The performance of superconducting quantum circuits is primarily limited by dielectric loss due to interactions with two-level systems (TLS). State-of-the-art circuits with engineered material interfaces are approaching a limit where dielectric loss from bulk substrates plays an important role. However, a microscopic understanding of dielectric loss in crystalline substrates is still lacking. In this work, we show that boron acceptors in silicon constitute a strongly coupled TLS bath for superconducting circuits. We discuss how the electronic structure of boron acceptors leads to an effective TLS response in silicon. We sweep the boron concentration in silicon and demonstrate the bulk dielectric loss limit from boron acceptors. We show that boron-induced dielectric loss can be reduced in a magnetic field due to the spin-orbit structure of boron. This work provides the first detailed microscopic description of a TLS bath for superconducting circuits, and demonstrates the need for ultrahigh purity substrates for next-generation superconducting quantum processors.

quant-ph↗

Non-Markovian dynamics of a superconducting qubit in a phononic bandgap

The overhead to construct a logical qubit from physical qubits rapidly increases with the decoherence rate. Current superconducting qubits reduce dissipation due to two-level systems (TLSs) by using large device footprints. However, this approach provides partial protection, and results in a trade-off between qubit footprint and dissipation. This work introduces a new platform using phononics to engineer superconducting qubit-TLS interactions. We realize a superconducting qubit on a phononic bandgap metamaterial that suppresses TLS-mediated phonon emission. We use the qubit to probe its thermalization dynamics with the phonon-engineered TLS bath. Inside the phononic bandgap, we observe the emergence of non-Markovian qubit dynamics due to the Purcell-engineered TLS lifetime of 34 $μs$. We discuss the implications of these observations for extending qubit relaxation times through simultaneous phonon protection and miniaturization.

quant-ph↗

Room-temperature photo-chromism of silicon vacancy centers in CVD diamond

The silicon-vacancy (SiV) center in diamond is typically found in three stable charge states, SiV0, SiV- and SiV2-, but studying the processes leading to their formation is challenging, especially at room temperature, due to their starkly different photo-luminescence rates. Here, we use confocal fluorescence microscopy to activate and probe charge interconversion between all three charge states under ambient conditions. In particular, we witness the formation of SiV0 via the two-step capture of diffusing, photo-generated holes, a process we expose both through direct SiV0 fluorescence measurements at low temperatures and confocal microscopy observations in the presence of externally applied electric fields. Further, we show that continuous red illumination induces the converse process, first transforming SiV0 into SiV-, then into SiV2-. Our results shed light on the charge dynamics of SiV and promise opportunities for nanoscale sensing and quantum information processing.

cond-mat.mtrl-sci↗

A telecom O-band emitter in diamond

Color centers in diamond are promising platforms for quantum technologies. Most color centers in diamond discovered thus far emit in the visible or near-infrared wavelength range, which are incompatible with long-distance fiber communication and unfavorable for imaging in biological tissues. Here, we report the experimental observation of a new color center that emits in the telecom O-band, which we observe in silicon-doped bulk single crystal diamonds and microdiamonds. Combining absorption and photoluminescence measurements, we identify a zero-phonon line at 1221 nm and phonon replicas separated by 42 meV. Using transient absorption spectroscopy, we measure an excited state lifetime of around 270 ps and observe a long-lived baseline that may arise from intersystem crossing to another spin manifold.

cond-mat.mtrl-sci↗

Neutral Silicon Vacancy Centers in Diamond via Photoactivated Itinerant Carriers

Neutral silicon vacancy (SiV0) centers in diamond are promising candidates for quantum network applications because of their exceptional optical properties and spin coherence. However, the stabilization of SiV0 centers requires careful Fermi level engineering of the diamond host material, making further technological development challenging. Here, we show that SiV0 centers can be efficiently stabilized by photoactivated itinerant carriers. Even in this nonequilibrium configuration, the resulting SiV0 centers are stable enough to allow for resonant optical excitation and optically detected magnetic resonance. Our results pave the way for on-demand generation of SiV0 centers as well as other emerging quantum defects in diamond.

quant-ph↗

Neutral silicon vacancy centers in undoped diamond via surface control

Neutral silicon vacancy centers (SiV0) in diamond are promising candidates for quantum networks because of their long spin coherence times and stable, narrow optical transitions. However, stabilizing SiV0 requires high purity, boron doped diamond, which is not a readily available material. Here, we demonstrate an alternative approach via chemical control of the diamond surface. We use low-damage chemical processing and annealing in a hydrogen environment to realize reversible and highly stable charge state tuning in undoped diamond. The resulting SiV0 centers display optically detected magnetic resonance and bulk-like optical properties. Controlling the charge state tuning via surface termination offers a route for scalable technologies based on SiV0 centers, as well as charge state engineering of other defects.

quant-ph↗

Optically detected magnetic resonance in neutral silicon vacancy centers in diamond via bound exciton states

Neutral silicon vacancy (SiV0) centers in diamond are promising candidates for quantum networks because of their excellent optical properties and long spin coherence times. However, spin-dependent fluorescence in such defects has been elusive due to poor understanding of the excited state fine structure and limited off-resonant spin polarization. Here we report the realization of optically detected magnetic resonance and coherent control of SiV0 centers at cryogenic temperatures, enabled by efficient optical spin polarization via previously unreported higher-lying excited states. We assign these states as bound exciton states using group theory and density functional theory. These bound exciton states enable new control schemes for SiV0 as well as other emerging defect systems.

cond-mat.mes-hall↗

Heisenberg-scaling measurement of the single-photon Kerr non-linearity using mixed states

Improving the precision of measurements is a significant scientific challenge. The challenge is twofold: first, overcoming noise that limits the precision given a fixed amount of a resource, N, and second, improving the scaling of precision over the standard quantum limit (SQL), 1/\sqrt{N}, and ultimately reaching a Heisenberg scaling (HS), 1/N. Here we present and experimentally implement a new scheme for precision measurements. Our scheme is based on a probe in a mixed state with a large uncertainty, combined with a post-selection of an additional pure system, such that the precision of the estimated coupling strength between the probe and the system is enhanced. We performed a measurement of a single photon's Kerr non-linearity with an HS, where an ultra-small Kerr phase of around 6 *10^{-8} rad was observed with an unprecedented precision of around 3.6* 10^{-10} rad. Moreover, our scheme utilizes an imaginary weak-value, the Kerr non-linearity results in a shift of the mean photon number of the probe, and hence, the scheme is robust to noise originating from the self-phase modulation.

quant-ph↗

Observation of an environmentally insensitive solid state spin defect in diamond

Engineering coherent systems is a central goal of quantum science. Color centers in diamond are a promising approach, with the potential to combine the coherence of atoms with the scalability of a solid state platform. However, the solid environment can adversely impact coherence. For example, phonon- mediated spin relaxation can induce spin decoherence, and electric field noise can change the optical transition frequency over time. We report a novel color center with insensitivity to both of these sources of environmental decoherence: the neutral charge state of silicon vacancy (SiV0). Through careful material engineering, we achieve over 80% conversion of implanted silicon to SiV0. SiV0 exhibits excellent spin properties, with spin-lattice relaxation times (T1) approaching one minute and coherence times (T2) approaching one second, as well as excellent optical properties, with approximately 90% of its emission into the zero-phonon line and near-transform limited optical linewidths. These combined properties make SiV0 a promising defect for quantum networks.

cond-mat.mtrl-sci↗

Strengthen Weak Measurement with Conjugated Destructive Interference

Standard weak measurement (SWM) has been proved to be a useful ingredient for measuring small longitudinal phase shifts. [Phys. Rev. Lett. 111, 033604 (2013)]. In this letter, we show that with specfic pre-coupling and postselection, destructive interference can be observed for the two conjugated variables, i.e. time and frequency, of the meter state. Using a broad band source, this conjugated destructive interference (CDI) can be observed in a regime approximately 1 attosecond, while the related spectral shift reaches hundreds of THz. This extreme sensitivity can be used to detect tiny longitudinal phase perturbation. Combined with a frequency-domain analysis, conjugated destructive interference weak measurement (CDIWM) is proved to outperform SWM by two orders of magnitude.

quant-ph↗