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Zia Ur Rehman

Publications and source records attributed to Zia Ur Rehman.

3 recordsLinked to original sources

Chiral Phonons and Giant Anisotropic Photoresponse in Quasi-1D van der Waals Semiconductor ZrSnS3

Low-dimensional van der Waals semiconductors with reduced symmetry provide a unique platform for exploring anisotropic physical properties. The quasi-one-dimensional family MXQ$_3$ (M = Hf, Zr; X = Sn; Q = S, Se) exhibits notable structural anisotropy, where zigzag atomic chains influence optical phenomena such as birefringence. This study investigates anisotropic lattice dynamics in ZrSnS$_3$ using angle- and polarization-dependent Raman spectroscopy. Temperature-dependent measurements reveal anharmonic phonon behavior, indicating strong phonon-phonon coupling. Density functional theory calculations show good agreement with the experimentally observed Raman spectra, validating the microscopic description of the lattice dynamics. We also observe a helicity-dependent intensity and a reversal in phonon intensity between lower- and higher-frequency modes under circularly polarized light, which is characteristic of chiral phonons governed by the polarization of the Zr/Sn chains. Our first-principles analysis further shows that angular-momentum-like phonon textures can emerge away from the $Γ$-point near mode-hybridization and avoided-crossing regions, providing microscopic insight into the observed helicity-dependent Raman signatures. Furthermore, we fabricate an optoelectronic device from a thin ZrSnS$_3$ nanowire, demonstrating a photoresponsivity of 50~mA/W under 520~nm laser excitation (1~mW/cm$^2$). The device exhibits a pronounced, power-scalable anisotropic photoresponse with a clear preferred polarization direction. These results highlight the coupling mechanisms between polarization, lattice vibrations, and charge carriers in ZrSnS$_3$, establishing it as a promising material for polarization-sensitive optoelectronics and directional quantum transport.

cond-mat.mtrl-sci↗

Sampling Boltzmann distributions via normalizing flow approximation of transport maps

In a celebrated paper \cite{noe2019boltzmann}, Noé, Olsson, Köhler and Wu introduced an efficient method for sampling high-dimensional Boltzmann distributions arising in molecular dynamics via normalizing flow approximation of transport maps. Here, we place this approach on a firm mathematical foundation. We prove the existence of a normalizing flow between the reference measure and the true Boltzmann distribution up to an arbitrarily small error in the Wasserstein distance. This result covers general Boltzmann distributions from molecular dynamics, which have low regularity due to the presence of interatomic Coulomb and Lennard-Jones interactions. The proof is based on a rigorous construction of the Moser transport map for low-regularity endpoint densities and approximation theorems for neural networks in Sobolev spaces. Numerical simulations for a simple model system and for the alanine dipeptide molecule confirm that the true and generated distributions are close in the Wasserstein distance. Moreover we observe that the RealNVP architecture does not just successfully capture the equilibrium Boltzmann distribution but also the metastable dynamics.

cs.LG↗

Raman scattering fingerprints of the charge density wave state in one-dimensional NbTe$_4$

Charge-density waves (CDWs) are ordered quantum states of conduction electrons accompanied by periodic lattice distortions. Raman scattering (RS) spectroscopy is therefore well suited for probing CDW-induced structural modulations. We investigate the CDW state in quasi-one-dimensional NbTe$_4$ using RS spectroscopy. At $T$=5~K, the resonantly enhanced Raman spectrum exhibits 25 phonon modes. Polarization-dependent measurements reveal a strong coupling between phonon-mode symmetry and crystallographic symmetry, with modes polarized parallel or perpendicular to the crystallographic $c$-axis, along which the one-dimensional structure is elongated. Temperature-dependent RS measurements identify a transition between commensurate and incommensurate CDW phases, accompanied by pronounced thermal hysteresis, with transition temperatures of approximately 45~K upon cooling and 90~K upon warming. The hysteresis width depends on the warming rate, indicating a finite nucleation rate of CDW domains and suggesting potential relevance for memory-device applications.

cond-mat.mtrl-sci↗