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Ziliang Ruan

Publications and source records attributed to Ziliang Ruan.

6 recordsLinked to original sources
arXiv2026

Robust and Active Visible-Light Integrated Photonics on Thin-Film Lithium Tantalate for Underwater Optical Wireless Communications

Visible-light integrated photonics enables compact platforms for sensing, precision metrology, and free-space data links at visible wavelengths. However, many applications remain limited by the lack of high-speed and robust modulators in the blue-green band. Here we report, both operating at 532 nm, thin-film lithium tantalate waveguides of propagation losses of dB/cm scale and modulators with a flat frequency response to ~50 GHz. The modulator remains stable when delivering 5 dBm modulated optical power for an hour, which cannot be achieved by thin-film lithium niobate based counterparts under similar conditions and structures. System-level underwater optical wireless communication (UWOC) is validated with 112-Gb/s transmission over 3-m and 64-Gb/s transmission over 9-m underwater links. This represents the first integrated external modulator based UWOC system, overcoming the bandwidth-power-chirp trade-offs of traditional directly modulated laser-based systems. We further demonstrate dual-drive modulators for optical single-sideband and electro-optic frequency-comb generations in the green-wavelength band. These results provide a foundation for complex, robust, and active visible-light photonic integrated circuits for underwater optical applications.

physics.optics↗
arXiv2026

Hybrid Integration of Quantum Dot Single Photon Sources with Lithium Tantalate Photonics for On Chip Routing

A promising pathway towards scalable quantum photonic processors involves the simultaneous integration of deterministic single-photon sources, low-loss photonic circuitry, and fast reconfigurability. Thin-film lithium tantalate on insulator (LTOI) offers an exceptional electro-optic response and low optical loss at 900 nm wavelength band, yet its lack of efficient quantum emitters has hindered progress toward fully integrated quantum technologies. Here, we demonstrate heterogeneous integration of indium arsenide quantum dots (QDs) with low-loss reconfigurable LTOI waveguides using micro-transfer printing. By directly butt-coupling tapered gallium arsenide waveguides with inversely tapered LTOI waveguides, we achieve robust and alignment-tolerant inter-waveguide coupling. The hybrid chip operates at cryogenic temperatures, enabling deterministic routing of successively emitted single photons from the QDs with a halfwave voltage-length product, confirming the cryogenic stability of LTOI's electro-optic coefficient. These results establish the first demonstration of high-speed on-chip routing of single photons with hybrid QD-LTOI circuits, providing a scalable pathway toward integrated quantum photonic processors.

physics.optics↗
arXiv2025

Heterogeneous back-end-of-line integration of thin-film lithium niobate on active silicon photonics for single-chip optical transceivers

The explosive growth of artificial intelligence, cloud computing, and large-scale machine learning is driving an urgent demand for short-reach optical interconnects featuring large bandwidth, low power consumption, high integration density, and low cost preferably adopting complementary metal-oxide-semiconductor (CMOS) processes. Heterogeneous integration of silicon photonics and thin-film lithium niobate (TFLN) combines the advantages of both platforms, and enables co-integration of high-performance modulators, photodetectors, and passive photonic components, offering an ideal route to meet these requirements. However, process incompatibilities have constrained the direct integration of TFLN with only passive silicon photonics. Here, we demonstrate the first heterogeneous back-end-of-line integration of TFLN with a full-functional and active silicon photonics platform via trench-based die-to-wafer bonding. This technology introduces TFLN after completing the full CMOS compatible processes for silicon photonics. Si/SiN passive components including low-loss fiber interfaces, 56-GHz Ge photodetectors, 100-GHz TFLN modulators, and multilayer metallization are integrated on a single silicon chip with efficient inter-layer and inter-material optical coupling. The integrated on-chip optical links exhibit greater than 60 GHz electrical-to-electrical bandwidth and support 128-GBaud OOK and 100-GBaud PAM4 transmission below forward error-correction thresholds, establishing a scalable platform for energy-efficient, high-capacity photonic systems.

physics.optics↗
arXiv2019

Lithium Niobate Michelson Interferometer Modulator on Silicon-On-Insulator Platform

We propose and demonstrate a hybrid silicon and lithium niobate Michelson Interferometer Modulator (MIM) with enhanced modulation efficiency compared to a Mach-Zehnder modulator. The modulator is based on seamless integration of a high-contrast waveguide based on lithium niobate-a popular modulator material-with compact, low-loss silicon circuitry. The present device demonstrates a modulation efficiency as high as 1.2 Vcm and a low insertion loss of 3.3 dB. The 3dB electro-optic bandwidth is approximately 17.5 GHz. The optical eye diagrams, operating at 32 Gbit/s and 40 Gbit/s, with measured dynamic extinction ratios at 8 dB and 6.6 dB respectively. The present device avoids absorption loss and nonlinearity in conventional silicon modulators and demonstrates highest modulation efficiency in LN modulators, showing potential in future optical interconnects.

physics.app-ph↗
arXiv2018

High-Performance Hybrid Silicon and Lithium Niobate Mach-Zehnder Modulators for 100 Gbit/s and Beyond

Optical modulators are at the heart of optical communication links. Ideally, they should feature low insertion loss, low drive voltage, large modulation bandwidth, high linearity, compact footprint and low manufacturing cost. Unfortunately, these criteria have only been achieved on separate occasions.Based on a Silicon and Lithium Niobate hybrid integration platform, we demonstrate Mach-Zehnder modulators that simultaneously fulfill these criteria. The presented device exhibits an insertion loss of 2.5 dB, voltage-length product of 2.2 Vcm, high linearity, electro-optic bandwidth of at least 70 GHz and modulation rates up to 112 Gbit/s. The high-performance modulator is realized by seamless integration of high-contrast waveguide based on Lithium Niobate - the most mature modulator material - with compact, low-loss silicon circuits. The hybrid platform demonstrated here allows for the combination of 'best-in-breed' active and passive components, opening up new avenues for enabling future high-speed, energy efficient and cost-effective optical communication networks.

physics.app-ph↗