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Ziliang Ye

Publications and source records attributed to Ziliang Ye.

At least 19 recordsLinked to original sources

Coherent multi-dimensional widefield microscopy

Understanding how electronic excitations evolve across space and time is essential for revealing the microscopic processes underlying quantum and optoelectronic materials. However, existing approaches cannot simultaneously resolve ultrafast coherent dynamics with microscopic spatial information: pump-probe microscopy lacks access to quantum coherence, while two-dimensional electronic spectroscopy (2DES) requires slow point-by-point scanning for spatial resolution. Here we introduce a widefield two-dimensional electronic spectroscopy microscope (2DESM) combining multidimensional coherent spectroscopy with widefield imaging, enabling simultaneous femtosecond temporal and micrometer spatial resolution across a broadband spectral range. Applying 2DESM to hBN-encapsulated WSe2, we directly visualize spatial variations in exciton coherence and relaxation associated with the local environment, establishing 2DESM as a powerful platform for probing many-body interactions, energy transport, and structure-function relationships in low-dimensional materials and devices.

physics.optics

Isolating Exciton Dissociation Pathways in ReSe$_{\text{2}}$

Strongly bound excitons dominate the optical response in many van der Waals semiconductors, yet distinguishing between the different microscopic processes governing exciton dissociation remains challenging. Using time- and angle-resolved photoemission spectroscopy (TR-ARPES), we independently track exciton and band-edge carrier populations in bulk ReSe$_{\text{2}}$ under resonant excitation. By studying the fluence dependence and polarization-controlled exciton density dependence of the exciton dissociation process, we distinguish between competing processes and identify exciton photoionization as the microscopic dissociation mechanism. These results establish a population-resolved strategy for resolving exciton-to-carrier conversion pathways in strongly excitonic materials.

cond-mat.mtrl-sci

Moiré excitons in generalized Wigner crystals

Moiré superlattices of transition-metal dichalcogenide bilayers host strong Coulomb interactions residing in narrow electron bands, leading to correlated insulating states at fractional carrier doping densities, known as generalized Wigner crystals. In excited states, the formation of moiré excitons is expected to be fundamentally shaped by the Wigner-crystal ground states, manifesting an intricate interplay between electronic and excitonic correlations. However, the microscopic description of these Wigner crystalline excitons (WCEs) remains elusive, largely subject to speculations, and is further needed for the understanding of exotic excitonic phases (e.g., exciton insulators and exciton density waves) and their unique properties (e.g., anomalous exciton diffusion). Here, using first-principles many-body GW-Bethe-Salpeter-equation calculations, we directly reveal the internal structures of WCEs in angle-aligned MoSe2/MoS2 moiré heterostructure at hole fillings of 1/3 and 2/3. Our results unveil the propagation of correlation effects from the ground state to excited states, shaping the real-space characteristics of WCEs. The strong two-particle excitonic correlations dominate over the kinetic energy of free electron-hole pairs, in analog to the strong single-particle correlations of flat bands. We propose that such unusual excited-state correlation effects of WCEs can be experimentally probed by photocurrent tunneling microscopy. Our work provides a microscopic understanding of strongly correlated WCEs, suggesting them as a highly tunable mixed boson-fermion platform to study many-body interactions and phenomena.

cond-mat.mtrl-sci

Correlated insulating states in slow Dirac fermions on a honeycomb moir{é} superlattice

Strong Coulomb repulsion is predicted to open a many-body charge gap at the Dirac point of graphene, transforming the semimetal into a Mott insulator. However, this correlated insulating phase has remained inaccessible in pristine graphene, where a large Fermi velocity dominates the interaction effects. To overcome this limitation, we realize a honeycomb moir{é} superlattice in a twisted MoSe$_2$ homobilayer, where a graphene-like band structure forms with a Fermi velocity reduced by nearly two orders of magnitude. These slow moir{é} bands are folded from the valence band maximum at the $Γ$ valley of the extended Brillouin zone with negligible spin-orbital coupling, and can therefore simulate massless Dirac fermions in the strongly correlated regime with full SU(2) symmetry. By correlating Rydberg exciton sensing with moir{é} trions of different spatial characters, we detect a Mott gap at the Dirac point that persists up to 110 K. We further identify correlated insulating states at $ν=-1$ with a weak ferromagnetic coupling as well as at several fractional fillings. Our results highlight the potential of studying a wide range of quantum many-body phenomena in twisted two-dimensional materials.

cond-mat.mes-hall

Nanosecond Ferroelectric Switching of Intralayer Excitons in Bilayer 3R-MoS2 through Coulomb Engineering

High-speed, non-volatile tunability is critical for advancing reconfigurable photonic devices used in neuromorphic information processing, sensing, and communication. Despite significant progress in developing phase change and ferroelectric materials, achieving highly efficient, reversible, rapid switching of optical properties has remained a challenge. Recently, sliding ferroelectricity has been discovered in 2D semiconductors, which also host strong excitonic effects. Here, we demonstrate that these materials enable nanosecond ferroelectric switching in the complex refractive index, largely impacting their linear optical responses. The maximum index modulation reaches about 4, resulting in a relative reflectance change exceeding 85%. Both on and off switching occurs within 2.5 nanoseconds, with switching energy at femtojoule levels. The switching mechanism is driven by tuning the excitonic peak splitting of a rhombohedral molybdenum disulfide bilayer in an engineered Coulomb screening environment. This new switching mechanism establishes a new direction for developing high-speed, non-volatile optical memories and highly efficient, compact reconfigurable photonic devices. Additionally, the demonstrated imaging technique offers a rapid method to characterize domains and domain walls in 2D semiconductors with rhombohedral stacking.

cond-mat.mes-hall

Femtosecond two-pulse laser approach for spall failure in thin foils

Spall failure in materials occurs when tensile waves, propagating through a material, interact leading to failure once the generated hydrostatic stress exceeds the material's strength. In this study, we introduce a novel two-pulse laser approach to induce spall failure by simultaneously illuminating both free surfaces of micro- and nanoscale-thick Ni foils using femtosecond laser pulses.By comparing this method with the conventional single-pulse approach, we demonstrate the unique effects of introducing a secondary laser pulse. Experimental observations utilizing electron microscopy and focused ion beam milling reveal that the proposed approach effectively induces failure at the center of the sample, resulting from the interaction of unloading tensile waves in the bulk. Notably, the spall threshold for nanoscale Ni foils is significantly reduced in the two-pulse approach compared to the single-pulse method. While the single-pulse method requires a threshold fluence of 2,500 $\mathrm{J \cdot m^{-2}}$, the two-pulse approach lowers this to 1,750 $\mathrm{J \cdot m^{-2}}$, highlighting its potential to generate higher hydrostatic stress with less laser pulse energy. Both experimental results and molecular dynamics simulations indicate ductile failure mechanisms involving nucleation, growth, and coalescence of voids, preceded by the emission of stacking faults and Shockley partial dislocations. These findings suggest that the two-pulse approach can be an effective approach for high-throughput photomechanical spallation experiments in metals.

cond-mat.mtrl-sci

Resolving Polarization Switching Pathways of Sliding Ferroelectricity in Trilayer 3R-MoS2

Exploring the pathways of polarization switching in 2D sliding ferroelectrics with multiple internal interfaces is crucial for understanding the switching mechanism and for enhancing their performance in memory-related applications. However, distinguishing the rich configurations of various stacking from a coexistence of polarization domains has remained challenging. In this investigation, we employ optical techniques to resolve the stacking degeneracy in a trilayer 3R-MoS2 across several polarization switching cycles. Through a comprehensive analysis of the unique excitonic response exhibited by different layers, we unveil multiple polarization switching pathways that are determined by the sequential release of domain walls initially pinned at various interfaces within the trilayer, providing an understanding of the switching mechanism in multilayered sliding ferroelectrics. Our study not only reveals the intricate dynamics of polarization switching, but also underscores the crucial role of controlling domain walls, pinning centers, and doping levels, offering new insights for enhancing the applications of these materials in sensing and computing.

cond-mat.mes-hall

AdaMR: Adaptable Molecular Representation for Unified Pre-training Strategy

We propose Adjustable Molecular Representation (AdaMR), a new large-scale uniform pre-training strategy for small-molecule drugs, as a novel unified pre-training strategy. AdaMR utilizes a granularity-adjustable molecular encoding strategy, which is accomplished through a pre-training job termed molecular canonicalization, setting it apart from recent large-scale molecular models. This adaptability in granularity enriches the model's learning capability at multiple levels and improves its performance in multi-task scenarios. Specifically, the substructure-level molecular representation preserves information about specific atom groups or arrangements, influencing chemical properties and functionalities. This proves advantageous for tasks such as property prediction. Simultaneously, the atomic-level representation, combined with generative molecular canonicalization pre-training tasks, enhances validity, novelty, and uniqueness in generative tasks. All of these features work together to give AdaMR outstanding performance on a range of downstream tasks. We fine-tuned our proposed pre-trained model on six molecular property prediction tasks (MoleculeNet datasets) and two generative tasks (ZINC250K datasets), achieving state-of-the-art (SOTA) results on five out of eight tasks.

q-bio.BM

Optically Probing Unconventional Superconductivity in Atomically Thin Bi$_2$Sr$_2$Ca$_{0.92}$Y$_{0.08}$Cu$_2$O$_{8+δ}$

Atomically thin cuprates exhibiting a superconducting phase transition temperature similar to bulk have recently been realized, although the device fabrication remains a challenge and limits the potential for many novel studies and applications. Here we use an optical pump-probe approach to noninvasively study the unconventional superconductivity in atomically thin Bi$_2$Sr$_2$Ca$_{0.92}$Y$_{0.08}$Cu$_2$O$_{8+δ}$ (Y-Bi2212). Apart from finding an optical response due to the superconducting phase transition that is similar to bulk Y-Bi2212, we observe that the sign and amplitude of the pump-probe signal in the atomically thin flake vary significantly in different dielectric environments depending on the nature of the optical excitation. By exploiting the spatial resolution of the optical probe, we uncover the exceptional sensitivity of monolayer Y-Bi2212 to the environment. Our results provide the first optical evidence for the intralayer nature of the superconducting condensate in Bi2212, and highlight the role of double-sided encapsulation in preserving superconductivity in atomically thin cuprates.

cond-mat.mes-hall

Non-volatile electrical polarization switching via domain wall release in 3R-MoS$_2$ bilayer

Understanding the nature of sliding ferroelectricity is of fundamental importance for the discovery and application of two-dimensional ferroelectric materials. In this work, we investigate the phenomenon of switchable polarization in a bilayer MoS$_2$ with a natural rhombohedral stacking, where the spontaneous polarization is coupled with excitonic effects through an asymmetric interlayer coupling. Using optical spectroscopy and imaging techniques, we observe how a released domain wall switches the polarization of a large single domain. Our results highlight the importance of domain walls in the polarization switching of non-twisted rhombohedral transition metal dichalcogenides and open new opportunities for the non-volatile control of their optical response.

cond-mat.mes-hall

Shear-strain-induced two-dimensional slip avalanches in rhombohedral MoS2

Slip avalanches are ubiquitous phenomena occurring in 3D materials under shear strain and their study contributes immensely to our understanding of plastic deformation, fragmentation, and earthquakes. So far, little is known about the role of shear strain in 2D materials. Here we show some evidence of two-dimensional slip avalanches in exfoliated rhombohedral MoS2, triggered by shear strain near the threshold level. Utilizing interfacial polarization in 3R-MoS2, we directly probe the stacking order in multilayer flakes and discover a wide variety of polarization domains with sizes following a power-law distribution. These findings suggest slip avalanches can occur during the exfoliation of 2D materials, and the stacking orders can be changed via shear strain. Our observation has far-reaching implications for developing new materials and technologies, where precise control over the atomic structure of these materials is essential for optimizing their properties as well as for our understanding of fundamental physical phenomena.

cond-mat.mes-hall

Ultrafast response of spontaneous photovoltaic effect in 3R-MoS2-based heterostructures

Rhombohedrally stacked MoS2 has been shown to exhibit spontaneous polarization down to the bilayer limit and can sustain a strong depolarization field when sandwiched between graphene. Such a field gives rise to a spontaneous photovoltaic effect without needing any p-n junction. In this work, we show the photovoltaic effect has an external quantum efficiency of 10\% for devices with only two atomic layers of MoS2 at low temperatures, and identify a picosecond-fast photocurrent response, which translates to an intrinsic device bandwidth at ~ 100-GHz level. To this end, we have developed a non-degenerate pump-probe photocurrent spectroscopy technique to deconvolute the thermal and charge-transfer processes, thus successfully revealing the multi-component nature of the photocurrent dynamics. The fast component approaches the limit of the charge-transfer speed at the graphene-MoS2 interface. The remarkable efficiency and ultrafast photoresponse in the graphene-3R-MoS2 devices support the use of ferroelectric van der Waals materials for future high-performance optoelectronic applications.

cond-mat.mes-hall

Optically probing the asymmetric interlayer coupling in rhombohedral-stacked MoS2 bilayer

The interlayer coupling is emerging as a new parameter for tuning the physical properties of two-dimensional (2D) van der Waals materials. When two identical semiconductor monolayers are stacked with a twist angle, the periodic interlayer coupling modulation due to the moiré superlattice may endow exotic physical phenomena, such as moiré excitons and correlated electronic phases. To gain insight into these new phenomena, it is crucial to unveil the underlying coupling between atomic layers. Recently, the rhombohedral-stacked transition metal dichalcogenide (TMD) bilayer has attracted significant interest because of the emergence of an out-of-plane polarization from non-ferroelectric monolayer constituents. However, as a key parameter responsible for the physical properties, the interlayer coupling and its relationship with ferroelectricity in them remain elusive. Here we probe the asymmetric interlayer coupling between the conduction band of one layer and the valence band from the other layer in a 3R-MoS2 bilayer, which can be understood as a result of a layer-dependent Berry phase winding. By performing optical spectroscopy in a dual-gated device, we show a type-II band alignment exists at K points in the 3R-MoS2 bilayer. Furthermore, by unraveling various contributions to the band offset, we quantitatively determine the asymmetric interlayer coupling and spontaneous polarization in 3R-MoS2.

cond-mat.mes-hall

Spontaneous Polarization Induced Photovoltaic Effect In Rhombohedrally Stacked MoS$_2$

Stacking order in van der Waals materials determines the coupling between atomic layers and is therefore key to the materials' properties. By exploring different stacking orders, many novel physical phenomena have been realized in artificial vdW stacks. Recently, 2D ferroelectricity has been observed in zero-degree aligned hBN and graphene-hBN heterostructures, holding promise in a range of electronic applications. In those artificial stacks, however, the single domain size is limited by the stacking-angle misalignment to about 0.1 to 1 $μ$m, which is incompatible with most optical or optoelectronic applications. Here we show MoS$_2$ in the rhombohedral phase can host a homogeneous spontaneous polarization throughout few-$μ$m-sized exfoliated flakes, as it is a natural crystal requiring no stacking and is, therefore free of misalignment. Utilizing this homogeneous polarization and its induced depolarization field (DEP), we build a graphene-MoS$_2$ based photovoltaic device with high efficiency. The few-layer MoS$_2$ is thinner than most oxide-based ferroelectric films, which allows us to maximize the DEP and study its impact at the atomically thin limit, while the highly uniform polarization achievable in the commensurate crystal enables a tangible path for up-scaling. The external quantum efficiency of our device is up to 16% at room temperature, over one order larger than the highest efficiency observed in bulk photovoltaic devices, owing to the reduced screening in graphene, the exciton-enhanced light-matter interaction, and the ultrafast interlayer relaxation in MoS$_2$. In view of the wide range of bandgap energy in other TMDs, our findings make rhombohedral TMDs a promising and versatile candidate for applications such as energy-efficient photo-detection with high speed and programmable polarity.

cond-mat.mes-hall

Ultrafast Manipulation of Valley Pseudospin

The coherent manipulation of spin and pseudospin underlies existing and emerging quantum technologies, including NMR, quantum communication, and quantum computation. Valley polarization, associated with the occupancy of degenerate, but quantum mechanically distinct valleys in momentum space, closely resembles spin polarization and has been proposed as a pseudospin carrier for the future quantum electronics. Valley exciton polarization has been created in the transition metal dichalcogenide (TMDC) monolayers using excitation by circularly polarized light and has been detected both optically and electrically. In addition, the existence of coherence in the valley pseudospin has been identified experimentally. The manipulation of such valley coherence has, however, remained out of reach. Here we demonstrate an all-optical control of the valley coherence by means of the pseudomagnetic field associated with the optical Stark effect. Using below-bandgap circularly polarized light, we experimentally rotate the valley exciton pseudospin in monolayer WSe2 on the femtosecond time scale. Both the direction and speed of the rotation can be optically manipulated by tuning the dynamic phase of excitons in opposite valleys. This study completes the generation-manipulation-detection paradigm for valley pseudospin, enabling the platform of excitons in 2D materials for the control of this novel degree of freedom in solids.

cond-mat.mes-hall

Optical Selection Rule based on Valley-Exciton Locking for 2D Valleytronics

Optical selection rule fundamentally determines the optical transition between energy states in a variety of physical systems from hydrogen atoms to bulk crystals such as GaAs. It is important for optoelectronic applications such as lasers, energy-dispersive X-ray spectroscopy and quantum computation. Recently, single layer transition metal dichalcogenide (TMDC) exhibits valleys in momentum space with nontrivial Berry curvature and excitons with large binding energy. However, it is unclear how the unique valley degree of freedom combined with the strong excitonic effect influences the optical excitation. Here we discover a new set of optical selection rules in monolayer WS2,imposed by valley and exciton angular momentum. We experimentally demonstrated such a principle for second harmonic generation (SHG) and two-photon luminescence (TPL). Moreover, the two-photon induced valley populations yield net circular polarized photoluminescence after a sub-ps interexciton relaxation (2p->1s) and last for 8 ps. The discovery of this new optical selection rule in valleytronic 2D system not only largely extend information degrees but sets a foundation in control of optical transitions that is crucial to valley optoeletronic device applications such as 2D valley-polarized light emitting diodes (LED), optical switches and coherent control for quantum computing.

cond-mat.mtrl-sci

Observation of Piezoelectricity in Monolayer Molybdenum Disulfide

Piezoelectricity offers precise and robust conversion between electricity and mechanical force. Here we report the first experimental evidence of piezoelectricity in a single layer of molybdenum disulfide (MoS2) crystal as a result of inversion symmetry breaking of the atomic structure, with measured piezoelectric coefficient e11 = 2.9e-10 C/m. Through the angular dependence of electro-mechanical coupling, we uniquely determined the two-dimensional (2D) crystal orientation. We observed that only MoS2 membranes with odd number of layers exhibited piezoelectricity, in sharp contrast to the conventional materials. The piezoelectricity discovered in single molecular membrane promises scaling down of nano-electro-mechanical systems (NEMS) to single atomic unit cell - the ultimate material limit.

cond-mat.mtrl-sci

Probing Excitonic Dark States in Single-layer Tungsten Disulfide

Transition metal dichalcogenide (TMDC) monolayer has recently emerged as an important two-dimensional semiconductor with promising potentials for electronic and optoelectronic devices. Unlike semi-metallic graphene, layered TMDC has a sizable band gap. More interestingly, when thinned down to a monolayer, TMDC transforms from an indirect bandgap to a direct bandgap semiconductor, exhibiting a number of intriguing optical phenomena such as valley selective circular dichroism, doping dependent charged excitons, and strong photocurrent responses. However, the fundamental mechanism underlying such a strong light-matter interaction is still under intensive investigation. The observed optical resonance was initially considered to be band-to-band transitions. In contrast, first-principle calculations predicted a much larger quasiparticle band gap size and an optical response that is dominated by excitonic effects. Here, we report experimental evidence of the exciton dominance mechanism by discovering a series of excitonic dark states in single-layer WS2 using two-photon excitation spectroscopy. In combination with GW-BSE theory, we find the excitons are Wannier excitons in nature but possess extraordinarily large binding energy (~0.7 eV), leading to a quasiparticle band gap of 2.7 eV. These strongly bound exciton states are observed stable even at room temperature. We reveal an exciton series in significant deviation from hydrogen models, with a novel inverse energy dependence on the orbital angular momentum. These excitonic energy levels are experimentally found robust against environmental perturbations. The discovery of excitonic dark states and exceptionally large binding energy not only sheds light on the importance of many-electron effects in this two-dimensional gapped system, but also holds exciting potentials for the device application of TMDC monolayers and their heterostructures.

cond-mat.mes-hall