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Ziyad Alswaidan

Publications and source records attributed to Ziyad Alswaidan.

3 recordsLinked to original sources

A 28nm 27,648-Spin Multichip Digital Ising Accelerator with Pegasus Connectivity

We report a 28 nm four-chip Ising accelerator with 27,648 spins, degree-15 Pegasus connectivity, and 10b coefficients. Boundary-state streaming overlaps interchip transfers with spin updates, achieving 98.03% simulated weak-scaling efficiency. At 140 MHz, the four-chip system delivers 30.24G peak updates/s at 1.2 pJ/update including I/O power, with 11.5$\times$ the throughput and approximately one-quarter the logic-plus-SRAM area per spin of a prior 28 nm multichip design. We demonstrate MaxCut, spin glass, frustrated loops, factorization, and 3SAT.

cs.AR

Modeling of Dark Count Probability in Perimeter-Gated SPADs

This Letter presents a novel analytical framework showing that the dark count probability (PDC) of perimeter-gated single-photon avalanche diodes (pg-SPADs) follows a complementary Gompertz function. Specifically, we show that PDC follows a complementary Gompertz form from which we derive a pixel-specific descriptor, the midpoint perimeter gate voltage, which characterizes a pixel's equiprobable operating point. We further show that a perimeter gate voltage compensation rate may be obtained from this descriptor to offset temperature-induced changes in the pixel's activation function. The proposed framework is experimentally validated using 4,096 pg-SPADs arranged in a 64 x 64 array and manufactured in a 0.35 $μ$m CMOS process. The devices were characterized at temperatures ranging from -5 $^o$C to 55 $^o$C and perimeter gate voltage magnitudes of 0 to 5 V. The measured results demonstrate deterministic bias control of dark count probability across process and temperature variations.

physics.ins-det

Probabilistic approximate optimization using single-photon avalanche diode arrays

Combinatorial optimization problems are central to science and engineering and specialized hardware from quantum annealers to classical Ising machines are being actively developed to address them. These systems typically sample from a fixed energy landscape defined by the problem Hamiltonian encoding the discrete optimization problem. The recently introduced Probabilistic Approximate Optimization Algorithm (PAOA) takes a different approach: it treats the optimization landscape itself as variational, iteratively learning circuit parameters from samples. Here, we demonstrate PAOA on a 64$\times$64 perimeter-gated single-photon avalanche diode (pgSPAD) array fabricated in 0.35 $μ$m CMOS, the first realization of the algorithm using intrinsically stochastic nanodevices. Each p-bit exhibits a device-specific, asymmetric (Gompertz-type) activation function due to dark-count variability. Rather than calibrating devices to enforce a uniform symmetric (logistic/tanh) activation, PAOA learns around device variations, absorbing residual activation and other mismatches into the variational parameters. On canonical 26-spin Sherrington-Kirkpatrick instances, PAOA achieves high approximation ratios with $2p$ parameters ($p$ up to 17 layers), and pgSPAD-based inference closely tracks CPU simulations. These results show that variational learning can accommodate the non-idealities inherent to nanoscale devices, suggesting a practical path toward larger-scale, CMOS-compatible probabilistic computers.

cs.ET