arXiv subjects

Ziyang Gan

Publications and source records attributed to Ziyang Gan.

At least 19 recordsLinked to original sources

arXiv2026

Tailoring optical Schrödinger cat states via orientation-dependent high-harmonic generation in $\rm{H}_2^+$

We theoretically demonstrate that the molecular orientation angle $θ$ provides a structurally intrinsic, continuously tunable control parameter for engineering optical Schrödinger cat states via high-harmonic generation (HHG) in H$_2^+$. Coupling time-dependent Schrödinger equation simulations to the fully quantized HHG framework, we evaluate the Wigner functions of the post-selected harmonic-mode states under two complementary conditioning strategies. Conditioning on resonance-enhanced low-order harmonics exploits the complementary dipole selection rules of the $1σ_g\to1σ_u$ and $1σ_g\to1π_u$ transitions, driving a kitten-cat crossover whose direction is opposite in the two channels as $θ$ is varied. Conditioning on plateau harmonics instead exploits two-center destructive interference, producing a reentrant cat$\to$kitten$\to$cat transition controlled by the order-dependent interference angle $θ^*(q)$. In both cases the crossover is decoupled from the laser intensity, focal geometry, and molecular density, offering a degree of control with no counterpart in atomic targets.

quant-ph↗

arXiv2026

Electron spin resonance driven photogalvanic effect in graphene-based structures

We report an electron-spin-resonance-driven linear photogalvanic effect (LPGE) in unbiased monolayer graphene and WSe_2/graphene heterostructures. Under linearly polarized 45--75 GHz radiation, the photovoltage exhibits pronounced resonant features in both Faraday and Voigt geometries. Multiple resonances associated with the electron spin resonance in graphene are observed for both out-of-plane and in-plane magnetic-field orientations. Their magnetic-field positions vary linearly with frequency, their amplitudes reverse sign across the charge-neutrality point, and the resonant contribution has the opposite sign to the nonresonant Drude photogalvanic background. We develop a microscopic theory in which radiation-induced momentum alignment followed by skew scattering generates both contributions. Their opposite signs originate from the orthogonal momentum alignments produced by indirect Drude absorption and direct spin-resonant transitions. The theory describes well the main features of the observed resonant photocurrent and provides a microscopic description of ESR-induced LPGE in two-dimensional systems. These results establish the photogalvanic response as a probe of ESR in unbiased micron-scale graphene-based devices.

cond-mat.mtrl-sci↗

arXiv2026

Tuning proximity-induced spin-orbit coupling in graphene/WSe$_{2}$ heterostructures

Recently, proximity-induced spin-orbit coupling (SOC) has been observed in heterostructures consisting of monolayer graphene (ML-G) and transition metal dichalcogenides (TMDCs) such as WSe$_{2}$. Successful tuning of SOC in graphene/WSe$_{2}$ heterostructures by applying mechanical pressure and electric fields was also demonstrated in previous studies. In addition, theoretical calculations predicted a strong dependence of the proximity-induced SOC on the twist angle between graphene and TMDC. Here, we put these predictions to experimental test in ML-G/ML-WSe$_{2}$/hBN-heterostructures, where the twist angle is determined by aligning fractured edges, and by crystallographic etching of graphene. By performing weak anti-localization measurements, we determine the strength of the Rasbha-type SOC ($λ_\mathrm{R}$) and the valley-Zeeman-type SOC ($λ_\mathrm{VZ}$). Our experiments confirm a strong twist angle dependence of the proximity-induced SOC in agreement with theoretical predictions. Finally, we demonstrate the tunability of the SOC strength via mechanical pressure, which is in agreement with earlier findings.

cond-mat.mes-hall↗

arXiv2026

Optimized near-field optical response via adaptive tip illumination

The performance of tip-enhanced optical microscopy is often limited by inefficient coupling of the excitation field to the plasmonic tip apex, as well as by thermal drift and optical aberrations. Here, we demonstrate that adaptive wavefront shaping based on Zernike mode provides a practical approach to achieving robust near-field optimisation at the tip apex. Using a sequential feedback algorithm, initially using the near-field signal, we narrow the illumination point-spread function and suppress sidelobes. This demonstrates that Zernike-mode control can be used for both aberration correction and field engineering. In tip-enhanced Raman measurements of a Janus MoSSe monolayer, conventional near-field optimisation increases the signal intensity by around 1.4 fold. A second optimisation step based directly on the Raman-band intensity yields a further 5 to 15 fold enhancement, depending on the specific tips used. These results establish a systematic, optics-based strategy for optimising tip fields, providing a transferable framework for improving tip-enhanced and related near-field spectroscopies.

physics.optics↗

arXiv2026

Enhancement of the WS$_2$ A$_{1\text{g}}$ Raman Mode in MoS$_2$/WS$_2$ Heterostructures

When combined into van der Waals heterostructures, transition metal dichalcogenide monolayers enable the exploration of novel physics beyond their unique individual properties. However, for interesting phenomena such as interlayer charge transfer and interlayer excitons to occur, precise control of the interface and ensuring high-quality interlayer contact is crucial. Here, we investigate bilayer heterostructures fabricated by combining chemical-vapor-deposition-grown MoS$_2$ and exfoliated WS$_2$ monolayers, allowing us to form several heterostructures with various twist angles within one preparation step. In case of sufficiently good interfacial contact, evaluated by photoluminescence quenching, we observe a twist-angle-dependent enhancement of the WS$_2$ A$_{1g}$ Raman mode. In contrast, other WS$_2$ and MoS$_2$ Raman modes (in particular, the MoS$_2$ A$_{1g}$ mode) do not show a clear enhancement under the same experimental conditions. We present a systematic study of this mode-selective effect using nonresonant Raman measurements that are complemented with ab-initio calculations of Raman spectra. We find that the selective enhancement of the WS$_2$ A$_{1g}$ mode exhibits a strong dependence on interlayer distance. We show that this selectivity is related to the A$_{1g}$ eigenvectors in the heterolayer: the eigenvectors are predominantly localized on one of the two layers; yet, the intensity of the MoS$_2$ mode is attenuated because the WS$_2$ layer is vibrating (albeit with much lower amplitude) out of phase, while the WS$_2$ mode is amplified because the atoms on the MoS$_2$ layer are vibrating in phase. To separate this eigenmode effect from resonant Raman enhancement, our study is extended with near-resonant Raman measurements.

cond-mat.mes-hall↗

arXiv2025

Photoluminescence-Based Gas Sensing with MoS2 Monolayers

Two-dimensional transition metal dichalcogenides (TMDs) are highly appealing for gas sensors, lab-on-a-chip devices and bio-sensing applications because of their strong light-matter interaction and high surface-to-volume ratio. The ability to grow these van der Waals materials on different substrates and waveguide geometries opens a horizon toward scalable on-chip photonic nanodevices. Here, we report on a versatile technique for real time remote optical gas sensing using two-dimensional TMDs. The adsorption of the gas molecules on the monolayer surface provides a gateway for gas sensing based on charge-transfer-induced photoluminescence variation. For gases that are weakly adsorbed on the surface of monolayer TMDs, purging the monolayers' surface by an inert gas like N2 can desorb gases from the monolayers at room temperature. We demonstrate CO, NO and NO2 detection by monitoring photoluminescence from semiconducting MoS2 monolayers grown on SiO2/Si chips at a level of 10 ppm with fast response time. Observations are supported by our density functional theory calculations, which predict a significant interaction between these gases and MoS2 monolayers. These findings may lead to advances in remote sensing, surface-sensitive bioanalytics and lab-on-a-chip sensors.

physics.app-ph↗

arXiv2024

Influence of resonant plasmonic nanoparticles on optically accessing the valley degree of freedom in 2D semiconductors

The valley degree of freedom is one of the most intriguing properties of atomically thin transition metal dichalcogenides. Together with the possibility to address this degree of freedom by valley-contrasting optical selection rules, it has the potential to enable a completely new class of future electronic and optoelectronic devices. Resonant optical nanostructures emerge as promising tools for interacting with and controlling the valley degree of freedom at the nanoscale. However, a critical understanding gap remains in how nanostructures and their nearfields affect the circular polarization properties of valley-selective emission hindering further developments in this field. In order to address this issue, our study delves into the experimental investigation of a hybrid model system where valley-specific emission from a monolayer of molybdenum disulfide is interacting with a resonant plasmonic nanosphere. Contrary to the simple intuition suggesting that a centrosymmetric nanoresonator preserves the degree of circular polarization in the forward scattered farfield by angular momentum conservation, our cryogenic photoluminescence microscopy reveals that the light emitted from the nanoparticle position is largely unpolarized, i.e. we observe depolarization. We rigorously study the nature of this phenomenon numerically considering the monolayer-nanoparticle interaction at different levels including excitation and emission. In doing so, we find that the farfield degree of polarization strongly reduces in the hybrid system when including excitons emitting from outside of the system's symmetry point, which in combination with depolarisation at the excitation level causes the observed effect. Our results highlight the importance of considering spatially distributed emitters for precise predictions of polarization responses in these hybrid systems.

physics.optics↗

arXiv2024

Probing Electronic Motion and Core Potential by Coulomb-reshaped Terahertz Radiation

The nature of electronic motion and structural information of atoms and molecules is encoded into strong-field induced radiations ranging from terahertz (THz) to extreme ultraviolet wavelength. The dependence of THz yields in bi-chromatic laser fields on ellipticity and interpulse phase delay were experimentally measured, and the trajectory calculations establish the link between the THz emission and the motion of the photoelectron wave packet. The interaction between the photoelectron and parent core transforms from soft collision to recollision as the laser field tuned from elliptical to linear polarization, which can be reflected in THz emission. The soft collision is found to be more effective in reconstructing electron dynamics through THz polarization, which enables to construct the effective core potential of the generating medium with the Coulomb-reshaped THz radiation in an elliptically polarized laser field. Our work allows designing innovative all-optical THz measurements of electronic and structural dynamics.

physics.atom-ph↗

arXiv2023

Kapitza-resistance-like exciton dynamics in atomically flat MoSe$_{2}$-WSe$_{2}$ lateral heterojunction

Being able to control the neutral excitonic flux is a mandatory step for the development of future room-temperature two-dimensional excitonic devices. Semiconducting Monolayer Transition Metal Dichalcogenides (TMD-ML) with extremely robust and mobile excitons are highly attractive in this regard. However, generating an efficient and controlled exciton transport over long distances is a very challenging task. Here we demonstrate that an atomically sharp TMD-ML lateral heterostructure (MoSe$_{2}$-WSe$_{2}$) transforms the isotropic exciton diffusion into a unidirectional excitonic flow through the junction. Using tip-enhanced photoluminescence spectroscopy (TEPL) and a modified exciton transfer model, we show a discontinuity of the exciton density distribution on each side of the interface. We introduce the concept of exciton Kapitza resistance, by analogy with the interfacial thermal resistance referred to as Kapitza resistance. By comparing different heterostructures with or without top hexagonal boron nitride (hBN) layer, we deduce that the transport properties can be controlled, over distances far greater than the junction width, by the exciton density through near-field engineering and/or laser power density. This work provides a new approach for controlling the neutral exciton flow, which is key toward the conception of excitonic devices.

cond-mat.mes-hall↗

arXiv2023

A Dataset for Deep Learning-based Bone Structure Analyses in Total Hip Arthroplasty

Total hip arthroplasty (THA) is a widely used surgical procedure in orthopedics. For THA, it is of clinical significance to analyze the bone structure from the CT images, especially to observe the structure of the acetabulum and femoral head, before the surgical procedure. For such bone structure analyses, deep learning technologies are promising but require high-quality labeled data for the learning, while the data labeling is costly. We address this issue and propose an efficient data annotation pipeline for producing a deep learning-oriented dataset. Our pipeline consists of non-learning-based bone extraction (BE) and acetabulum and femoral head segmentation (AFS) and active-learning-based annotation refinement (AAR). For BE we use the classic graph-cut algorithm. For AFS we propose an improved algorithm, including femoral head boundary localization using first-order and second-order gradient regularization, line-based non-maximum suppression, and anatomy prior-based femoral head extraction. For AAR, we refine the algorithm-produced pseudo labels with the help of trained deep models: we measure the uncertainty based on the disagreement between the original pseudo labels and the deep model predictions, and then find out the samples with the largest uncertainty to ask for manual labeling. Using the proposed pipeline, we construct a large-scale bone structure analyses dataset from more than 300 clinical and diverse CT scans. We perform careful manual labeling for the test set of our data. We then benchmark multiple state-of-the art deep learning-based methods of medical image segmentation using the training and test sets of our data. The extensive experimental results validate the efficacy of the proposed data annotation pipeline. The dataset, related codes and models will be publicly available at https://github.com/hitachinsk/THA.

eess.IV↗

arXiv2023

Interface engineering of charge-transfer excitons in 2D lateral heterostructures

The existence of bound charge transfer (CT) excitons at the interface of monolayer lateral heterojunctions has been debated in literature, but contrary to the case of interlayer excitons in vertical heterostructure their observation still has to be confirmed. Here, we present a microscopic study investigating signatures of bound CT excitons in photoluminescence spectra at the interface of hBN-encapsulated lateral MoSe$_2$-WSe$_2$ heterostructures. Based on a fully microscopic and material-specific theory, we reveal the many-particle processes behind the formation of CT excitons and how they can be tuned via interface- and dielectric engineering. For junction widths smaller than the Coulomb-induced Bohr radius we predict the appearance of a low-energy CT exciton. The theoretical prediction is compared with experimental low-temperature photoluminescence measurements showing emission in the bound CT excitons energy range. Our joint theory-experiment study presents a significant step towards a microscopic understanding of optical properties of technologically promising 2D lateral heterostructures.

cond-mat.mes-hall↗

arXiv2023

Coulomb potential determining terahertz polarization in two-color laser field

The orientation and ellipticity of terahertz (THz) polarization generated by two-color strong field not only cast light on underlying mechanisms of laser-matter interaction, but also play an important role for various applications. We develop the Coulomb-corrected classical trajectory Monte Carlo (CTMC) method to well reproduce the joint measurements, that the THz polarization generated by the linearly-polarized 800 nm and circularly-polarized 400 nm fields is independent on two-color phase delay. The trajectory analysis shows that the Coulomb potential twists the THz polarization by deflecting the orientation of asymptotic momentum of electron trajectories. Further, the CTMC calculations predict that, the two-color mid-infrared field can effectively accelerate the electron rapidly away from the parent core to relieve the disturbance of Coulomb potential, and simultaneously create large transverse acceleration of trajectories, leading to the circularly-polarized THz radiation.

physics.optics↗

arXiv2022

Direct Growth of Monolayer MoS$_2$ on Nanostructured Silicon Waveguides

We report for the first time the direct growth of Molybdenum disulfide (MoS$_2$) monolayers on nanostructured silicon-on-insulator waveguides. Our results indicate the possibility of utilizing the Chemical Vapour Deposition (CVD) on nanostructured photonic devices in a scalable process. Direct growth of 2D material on nanostructures rectifies many drawbacks of the transfer-based approaches. We show that the van der Waals materials grow conformally across the curves, edges, and the silicon-SiO$_2$ interface of the waveguide structure. Here, the waveguide structure used as a growth substrate is complex not just in terms of its geometry but also due to the two materials (Si and SiO$_2$) involved. A transfer-free method like this yields a novel approach for functionalizing nanostructured, integrated optical architectures with an optically active direct semiconductor.

physics.app-ph↗

arXiv2022

Tuning nanowire lasers via hybridization with two-dimensional materials

Mixed dimensional hybrid structures have recently gained increasing attention as promising building blocks for novel electronic and optoelectronic devices. In this context, hybridization of semiconductor nanowires with two-dimensional materials could offer new ways to control and modulate lasing at the nanoscale. In this work, we deterministically fabricate hybrid mixed-dimensional heterostructures composed of ZnO nanowires and MoS2 monolayers with micrometer control over their relative position. First, we show that our deterministic fabrication method does not degrade the optical properties of the ZnO nanowires. Second, we demonstrate that the lasing wavelength of ZnO nanowires can be tuned by several nanometers by hybridization with CVD-grown MoS2 monolayers. We assign this spectral shift of the lasing modes to an efficient carrier transfer at the heterointerface and the subsequent increase of the optical band gap in ZnO (Moss-Burstein effect).

physics.optics↗

arXiv2022

One pot chemical vapor deposition of high optical quality large area monolayer Janus transition metal dichalcogenides

We report one-pot chemical vapor deposition (CVD) growth of large-area Janus SeMoS monolayers, with the asymmetric top (Se) and bottom (S) chalcogen atomic planes with respect to the central transition metal (Mo) atoms. The formation of these two-dimensional semiconductor monolayers takes place upon the thermodynamic equilibrium-driven exchange of the bottom Se atoms of the initially grown MoSe2 single crystals on gold foils with S atoms. The growth process is characterized by complementary experimental techniques including Raman and X-ray photoelectron spectroscopy and the growth mechanisms are rationalized by first principle calculations. The remarkably high optical quality of the synthesized Janus monolayers is demonstrated by optical and magneto-optical measurements which reveal the strong exciton-phonon coupling and enable to obtain the exciton g-factor of -3.3.

cond-mat.mtrl-sci↗

arXiv2022

Exciton spectroscopy and diffusion in MoSe2-WSe2 lateral heterostructures encapsulated in hexagonal boron nitride

Chemical vapor deposition (CVD) allows lateral edge epitaxy of transition metal dichalcogenide heterostructures with potential applications in optoelectronics. Critical for carrier and exciton transport is the quality of the two materials that constitute the monolayer and the nature of the lateral heterojunction. Important details of the optical properties were inaccessible in as-grown heterostructure samples due to large inhomogeneous broadening of the optical transitions. Here we perform optical spectroscopy at T = 4 K and also at 300 K to access the optical transitions in CVD grown MoSe2-WSe2 lateral heterostructures that are transferred from the growth-substrate and are encapsulated in hBN. Photoluminescence (PL), reflectance contrast and Raman spectroscopy reveal considerably narrowed optical transition linewidth similar to high quality exfoliated monolayers. In high-resolution transmission electron microscopy (HRTEM) we find near-atomically sharp junctions with a typical extent of 3nm for the covalently bonded MoSe2-WSe2. In PL imaging experiments we find effective excitonic diffusion length that are longer for WSe2 than for MoSe2 at low T=4 K, whereas at 300 K this trend is reversed.

cond-mat.mtrl-sci↗

arXiv2022

Signatures of multi-band effects in high-harmonic generation in monolayer MoS$_2$

High-harmonic generation (HHG) in solids has been touted as a way to probe ultrafast dynamics and crystal symmetries in condensed matter systems. Here, we investigate the polarization properties of high-order harmonics generated in monolayer MoS$_2$, as a function of crystal orientation relative to the mid-infrared laser field polarization. At several different laser wavelengths we experimentally observe a prominent angular shift of the parallel-polarized odd harmonics for energies above approximately 3.5 eV, and our calculations indicate that this shift originates in subtle differences in the recombination dipole strengths involving multiple conduction bands. This observation is material specific and is in addition to the angular dependence imposed by the dynamical symmetry properties of the crystal interacting with the laser field, and may pave the way for probing the vectorial character of multi-band recombination dipoles.

cond-mat.mtrl-sci↗

arXiv2021

All-optical polarization and amplitude modulation of second-harmonic generation in atomically thin semiconductors

Second-harmonic generation is of paramount importance in several fields of science and technology, including frequency conversion, self-referencing of frequency combs, nonlinear spectroscopy and pulse characterization. Advanced functionalities are enabled by modulation of the harmonic generation efficiency, which can be achieved with electrical or all-optical triggers. Electrical control of the harmonic generation efficiency offers large modulation depth at the cost of low switching speed, by contrast to all-optical nonlinear devices, which provide high speed and low modulation depth. Here we demonstrate all-optical modulation of second-harmonic generation in MoS2 with a modulation depth of close to 100% and speed limited only by the fundamental pulse duration. This result arises from a combination of D3h crystal symmetry and the deep subwavelength thickness of the sample, it can therefore be extended to the whole family of transition metal dichalcogenides to provide great flexibility in the design of advanced nonlinear optical devices such as high-speed integrated frequency converters, broadband autocorrelators for ultrashort pulse characterization, and tunable nanoscale holograms.

physics.optics↗