arXiv subjects

Ziye Zhu

Publications and source records attributed to Ziye Zhu.

At least 19 recordsLinked to original sources

arXiv2026

Ferroelectric switching of odd-parity magnon spin splitting

Magnetic symmetry can lift spin degeneracy in momentum space without producing net magnetization, generating spin textures classified by their parity under momentum reversal. Even-parity textures have well established in altermagnets. Odd-parity spin textures have recently emerged in electronic bands of compensated magnets, but their counterpart in collective bosonic excitations remains experimentally unresolved. Magnons provide a natural setting for this extension because they carry spin angular momentum through insulating magnets without accompanying charge flow. Beyond realizing this missing state, a broader challenge is to program spin splitting with voltage at room temperature. Here we report room-temperature transport evidence for ferroelectric switching odd-parity magnon spin splitting in multiferroic BiFeO3. Symmetry analysis and spin-wave calculations reveal that the cycloidal chirality splits opposite-spin magnon branches with an odd-in-momentum dependence and sets the sign. Experimentally, an injected in-plane-polarized spin current generates an out-of-plane magnon spin component during propagation. This component exhibits the crystalline angular dependence predicted by theory and reverses upon ferroelectric switching, providing a transport fingerprint of the spin-split magnon state. We use the programmed magnon spin to drive deterministic field-free switching of a perpendicular ferromagnet and demonstrate XNOR logic-in-memory. Our results extend odd-parity spin splitting from fermionic electronic states to bosonic collective modes and establish nonvolatile electrical control at room temperature.

cond-mat.mtrl-sci↗

arXiv2026

LettuceVisSim: A Simulator That Generates Lettuce Image Time-series for Vision-Based Reinforcement Learning

Vision-based reinforcement learning holds strong potential for decision-making in controlled environment agriculture (CEA). However, its development is hindered by the scarcity of labelled crop images. To address this gap, LettuceVisSim, a lettuce growth simulator that generates labelled time series of crop images, was developed and validated. The simulator contains a process-based model (PBM) for shoot dry weight dynamics, a canopy layout algorithm for deriving canopy layout representations from shoot dry weight, and a Unity rendering engine for image generation. Five findings support the simulator. First, the PBM reproduced shoot dry weight under dynamic plant-density management with $\mathrm{R}^{2}=0.84$. Second, a piecewise cubic regression mapped shoot dry weight to potential projected area with $\mathrm{R}^{2}=0.94$. Third, the canopy layout representation was validated using 12 experimental datasets each having different dynamic environmental and spacing conditions. It reproduced the ground coverage ratio dynamics observed in measured images, achieving $\mathrm{R}^{2}=0.84$ when driven by measured shoot dry weight and $\mathrm{R}^{2}=0.40$ (0.76 excluding one outlier) when driven by PBM-simulated values. Fourth, the Unity rendering engine converted canopy layout representations into RGB and segmentation images at less than 10~ms. Fifth, a demonstration showed that a lighting-control policy can be learned and applied by observing only crop images that were generated with LettuceVisSim, providing a proof of concept of vision-based reinforcement learning in CEA using LettuceVisSim.

cs.CV↗

arXiv2026

Large Field-Free Superconducting Diode Effect with Nonmonotonic Polarity Reversals in NbSe$_2$/CrBr$_3$ Heterostructures

The superconducting diode effect (SDE), characterized by nonreciprocal dissipationless supercurrent, offers a promising route toward ultralow-power superconducting electronics. Yet most realizations require an external magnetic field, and achieving a large, controllable SDE at zero field remains challenging. Here we report a field-free SDE with an efficiency reaching 35.7% in a van der Waals NbSe$_2$/CrBr$_3$ heterostructure, whose polarity is programmable by magnetic-field history. Unlike conventional mechanisms based on finite-momentum pairing, the SDE originates from the leading symmetry-allowed cubic term odd in Cooper-pair momentum, which yields unequal critical currents while leaving the equilibrium condensate at zero momentum. Remarkably, upon sweeping a perpendicular magnetic field, the diode polarity undergoes nonmonotonic and hysteretic reversals that cannot be explained by Meissner screening or conventional ferromagnetic proximity. Combining transport measurements, micromagnetic simulations, and a generalized Ginzbur-Landau theory, we attribute these unconventional behaviors to layered ferrimagnetism in CrBr$_3$, where coexisting ferromagnetic and antiferromagnetic interlayer couplings produce a history-dependent interfacial exchange field acting on NbSe$_2$. Our results reveal a distinct mechanism for nonreciprocal superconductivity and establish layered van der Waals magnetism as a versatile platform for high-efficiency, programmable, field-free superconducting diodes.

cond-mat.supr-con↗

arXiv2026

Surface Functionalization Enables Two-Dimensional Altermagnetism and Giant Tunnel Magnetoresistance

Two-dimensional (2D) altermagnets (AMs) are highly desirable for ultrafast, stray-field-free spintronics because they combine compensated magnetic order and momentum-dependent spin splitting with the scalability, tunability, and interface compatibility of atomically thin materials. However, practical 2D AMs remain scarce. Rather than relying solely on the search for intrinsic 2D AMs, an appealing route is to transform known 2D antiferromagnets (AFMs) into AMs through symmetry engineering. Here, we propose surface functionalization as a symmetry-guided, nonvolatile chemical switch for realizing this AFM-to-AM transformation. By breaking inversion and out-of-plane mirror symmetries while preserving the rotation symmetry connecting opposite-spin sublattices, single-sided functionalization lifts spin degeneracy and induces altermagnetic spin splitting. Using monolayer FeSe as a representative platform, first-principles calculations show that hydrogenation, oxidation, and fluorination convert spin-degenerate antiferromagnetic FeSe into a d-wave AM with pronounced momentum-dependent spin splitting. At the device level, our transport simulations reveal that the functionalized FeSe monolayer magnetic tunnel junctions exhibit giant tunnel magnetoresistance (TMR) up to $1.87\times10^3\%$, originating from momentum-selective spin filtering between parallel and antiparallel Néel-vector configurations. The strong dependence of TMR on functionalization geometry further demonstrates that surface chemistry provides an effective control knob for altermagnetic transport. Our work establishes a symmetry-to-chemistry-to-device strategy for engineering 2D AMs and developing high-performance altermagnetic spintronic devices.

cond-mat.mtrl-sci↗

arXiv2026

Altermagnetic Proximity Effect

Proximity effects not only complement the conventional methods of designing materials, but also enable realizing properties that are not present in any constituent region of the considered heterostructure. Here we reveal an unexplored altermagnetic proximity effect (AMPE), distinct from its ferromagnetic and antiferromagnetic counterparts. Using first-principles and model analyses of van der Waals heterostructures based on the prototypical altermagnet V$_2$Se$_2$O, we show that its hallmark momentum-alternating spin splitting can be directly imprinted onto adjacent nonmagnetic layers -- a process we term altermagnetization. This is demonstrated in a monolayer PbO through characteristic band splitting and real-space spin densities, with systematic dependence on interlayer spacing and magnetic configuration. We further predict broader AMPE manifestations: Valley-selective spin splitting in a monolayer PbS and a topological superconducting phase in monolayer NbSe$_2$, both inheriting the alternating $k$-space spin texture of the altermagnet. These results establish AMPE not only as a distinct proximity mechanism, but also as a powerful method of using altermagnetism in designing emergent phenomena and versatile applications.

cond-mat.mtrl-sci↗

arXiv2026

Altermagnets Enable Gate-Switchable Helical and Chiral Topological Transport with Spin-Valley-Momentum-Locked Dual Protection

We establish a unified, symmetry-driven framework that combines the alternating spin splitting of altermagnets with valley topology to realize and electrically interconvert helical and chiral topological phases within a single material platform. We first demonstrate a magnetic analogue of the quantum spin Hall effect in altermagnets, hosting helical spin-valley-momentum-locked (SVML) edge states characterized by a composite spin-valley Chern number Csv = 2. Large-scale quantum transport simulations show these SVML edge states exhibit fully quantized spin conductance robust against nonmagnetic and long-range magnetic disorder, reflecting their dual topological protection, while remaining vulnerable to short-range magnetic disorder. Exploiting that the counterpropagating SVML modes are linked by crystal rotation symmetry, we introduce a gate-tunable sublattice-staggered potential that selectively gaps one valley and converts the helical state into a chiral quantum anomalous Hall phase with Csv = 1, robust against all disorder types. Reversing the potential switches the transmitted spin-valley polarization. Our first-principles calculations identify monolayer V2STeO and VO families as realistic platforms supporting both helical and chiral topological phases and their electrical switching. These results establish altermagnets as electrically programmable platforms for robust topological devices across charge, spin, and valley.

cond-mat.mes-hall↗

arXiv2026

Ab initio study of carrier mobility in Bi$_2$O$_2$Se

Bi$_2$O$_2$Se is an emerging high-performance layered semiconductor with excellent stability. While experimental studies have explored carrier transport across various doping levels for both $n$-type and $p$-type conduction, a comprehensive theoretical understanding remains incomplete. In this work, we present parameter-free first-principles calculations of the electron and hole mobilities in Bi$_2$O$_2$Se, based on iterative solution of the Boltzmann transport equation that includes electron-phonon scattering and ionized impurity scattering on an equal footing. Intriguingly, we find that Bi$_2$O$_2$Se exhibits high electron mobilities in both the in-plane and out-of-plane directions, whereas the hole mobilities are only significant in the in-plane direction, displaying a unique three-dimensional (3D) electron transport and two-dimensional (2D) hole transport behavior. At 300~K, the calculated intrinsic electron and hole mobilities along the in-plane direction are 447~$\mathrm{cm^2\,V^{-1}\,s^{-1}}$ and 29~$\mathrm{cm^2\,V^{-1}\,s^{-1}}$, respectively, which are primarily affected by Fröhlich electron-phonon interactions. Due to its large static dielectric permittivity, Bi$_2$O$_2$Se exhibits an exceptionally high low-temperature electron mobilities above $1.0\times10^5~\mathrm{cm^2\,V^{-1}\,s^{-1}}$, and its electron mobilities above 50~K is robust against ionized impurity scattering over a wide range of impurity concentrations. By incorporating the Hall effect into our analysis, we predict an in-plane electron Hall mobility of 517~$\mathrm{cm^2\,V^{-1}\,s^{-1}}$ at 300~K, in excellent agreement with experimental data. These results provide valuable insights into the carrier transport mechanisms in Bi$_2$O$_2$Se, and offer predictive benchmarks for future theoretical and experimental investigations.

cond-mat.mtrl-sci↗

arXiv2026

Symmetry-Driven Unconventional Magnetoelectric Coupling in Perovskite Altermagnets: From Bulk to the Two-Dimensional Limit

The emergence of altermagnets establishes a new paradigm for multiferroics. Unlike conventional multiferroics relying on direct magnetoelectric coupling, multiferroic altermagnets host a crystal-symmetry-mediated magnetoelectric interaction that is intrinsically more efficient and robust. Among candidate material platforms, layered perovskites are particularly appealing owing to their structural diversity and synthetic versatility. However, magnetoelectric properties at the two-dimensional scale remain largely unexplored, hindering their applicability in miniaturized, highly integrated devices. Here, we systematically investigate the dimensional evolution of ferroelectric polarization and magnetism in perovskite systems through symmetry analysis. We demonstrate that altermagnetism can persist in the two-dimensional limit, yet is strongly constrained by the magnetic configuration-with only C-type antiferromagnetic order supporting it. Based on mode-decomposition calculations, we further reveal that symmetry-restricted multimode couplings simultaneously govern ferroelectric polarization and altermagnetic spin splitting. Finally, combined with first-principles calculations, we propose several strategies to lift the magnetic-configuration constraint, extending the range of viable altermagnetic systems. These results underscore the critical role of dimensionality in symmetry-driven magnetoelectric coupling in perovskite altermagnets and pave the way toward next-generation electrically controlled spintronic and multiferroic devices.

cond-mat.mtrl-sci↗

arXiv2025

Altermagnetoelectric Spin Field Effect Transistor

Spin field-effect transistors (SFETs) are promising candidates for low-power spin-based electronics, yet existing realizations that rely on spin-orbit coupling are constrained by limited material choices and short spin-coherence lengths. Here we propose a different operating principle based on multiferroic altermagnets, in which spin splitting is tuned by an electric field through symmetry control rather than conventional spin-orbit physics. Using an effective model combined with quantum transport simulations, we show that the conductance is determined by the degree of matching between the electrically controlled spin texture of the channel and the fixed spin polarization of ferromagnetic contacts, enabling clear ON and OFF states. Remarkably, we also address a long-standing challenge in multiferroic device design: spintronic channels require metallic carriers, whereas ferroelectricity is usually suppressed in metals. We resolve this conflict by imprinting multiferroic altermagnetism into highly conductive materials via the proximity effect. First-principles calculations for graphene on multiferroic vanadium sulfide halides confirm that graphene acquires a ferroelectrically switchable spin splitting while retaining its metallic character. These results establish a practical route to SFET implementation and identify multiferroic altermagnets as a versatile platform for next-generation spintronic devices.

cond-mat.mtrl-sci↗

arXiv2025

Emergent Multiferroic Altermagnets and Spin Control via Noncollinear Molecular Polarization

Altermagnets, with spin splitting and vanishing magnetization, have been attributed to many fascinating phenomena and potential applications. In particular, integrating ferroelectricity with altermagnetism to enable magnetoelectric coupling and electric control of spin has drawn significant attention. However, its experimental realization and precise spin manipulation remain elusive. Here, by focusing on molecular ferroelectrics, the first discovered ferroelectrics renowned for their highly controllable molecular polarizations and structural flexibility, we reveal that these obstacles can be removed by an emergent multiferroic altermagnets with tunable spin polarization in a large class of fabricated organic materials. Using a symmetry-based design and a tight-binding model, we uncover the underlying mechanism of such molecular ferroelectric altermagnets and demonstrate how noncollinear molecular polarization can switch the spin polarization on and off and even reverse its sign. From the first-principles calculations, we verify the feasibility of these materials in a series of well-established hybrid organic-inorganic perovskites and metal-organic frameworks. Our findings bridge molecular ferroelectrics and altermagnetic spintronics, highlighting an unexplored potential of multifunctional organic multiferroics.

cond-mat.mtrl-sci↗

arXiv2025

Two-Dimensional Ferroelectric Altermagnets: From Model to Material Realization

Multiferroic altermagnets offer new opportunities for magnetoelectric coupling and electrically tunable spintronics. However, due to intrinsic symmetry conflicts between altermagnetism and ferroelectricity, achieving their coexistence, known as ferroelectric altermagnets (FEAM), remains an outstanding challenge, especially in two-dimensional (2D) systems. Here, we propose a universal, symmetry-based design principle for 2D FEAM, supported by tight-binding models and first-principles calculations. We show that lattice distortions can break spin equivalence and introduce the necessary rotation-related symmetry, enabling altermagnetism with electrically reversible spin splitting. Guided by this framework, we identify a family of 2D vanadium oxyhalides and sulfide halides as promising FEAM candidates. In these compounds, pseudo Jahn-Teller distortions and Peierls-like dimerization cooperatively establish the required symmetry conditions. We further propose the magneto-optical Kerr effect as an experimental probe to confirm FEAM and its electric spin reversal. Our findings provide a practical framework for 2D FEAM and advancing electrically controlled spintronic devices.

cond-mat.mtrl-sci↗

arXiv2025

Antiferroelectric Altermagnets: Antiferroelectricity Alters Magnets

Magnetoelectric coupling is crucial for uncovering fundamental phenomena and advancing technologies in high-density data storage and energy-efficient devices. The emergence of altermagnets, which unify the advantages of ferromagnets and antiferromagnets, offers unprecedented opportunities for magnetoelectric coupling. However, electrically tuning altermagnets remains an outstanding challenge. Here, we demonstrate how this challenge can be overcome by using antiferroelectricity and ferroelectricity to modulate the spin splitting in altermagnets, employing a universal, symmetry-based design principle supported by an effective model. We introduce an unexplored class of multiferroics: antiferroelectric altermagnets (AFEAM), where antiferroelectricity and altermagnetism coexist in a single material. From first-principles calculations, we validate the feasibility of AFEAM in well-established van der Waals metal thio(seleno)phosphates and perovskite oxides. We reveal the design of AFEAM ranging from two-dimensional monolayers to three-dimensional bulk structures. Remarkably, even a weak electric field can effectively toggle spin polarization in the AFEAM by switching between antiferroelectric and ferroelectric states. Our findings not only enrich the understanding of magnetoelectric coupling but also pave the way for electrically controlled spintronic and multiferroic devices.

cond-mat.mtrl-sci↗

arXiv2025

Quantum Geometric Origin of Strain-Induced Ferroelectric Phase Transitions

Strain-regulated ferroelectric (FE) materials have long attracted significant attention due to their diverse applications. While soft-phonon theory and the (pseudo) Jahn-Teller effect have achieved considerable success in providing phenomenological descriptions and general understanding, the detailed connection between these perspectives and their microscopic dependence on strain regulation remains unclear. Here, under the framework of density-functional perturbation theory (DFPT), we demonstrate that the Berry curvature of electron-phonon coupling (EPC) plays a pivotal role in the interatomic force matrix (IFM). A subsequent model analysis shows that external strain can reverse the polarity of the EPC Berry curvature in (quasi)-degenerate electronic subsystems through band inversion, thereby directly leading to phonon softening. The general theory is then applied to the BiOCl monolayer as a benchmark, which offers an accurate description of the density functional theory (DFT) calculations. This mechanism is further observed across a broad range of materials through ab initio calculations, providing an insightful perspective on EPC quantum geometry in lattice dynamics and FE phase transitions.

cond-mat.mtrl-sci↗

arXiv2025

Quantum Geometric Origin of Strain-Tunable Giant Second-Harmonic Generation in Bi$_2$O$_2$X (X=S, Se, Te)

Two-dimensional (2D) materials with giant nonlinear optical (NLO) responses are essential for the development of advanced on-chip NLO devices. Using first-principles calculations, we predict a remarkable strain-induced enhancement of second-harmonic generation (SHG) in the high-performance 2D semiconductors Bi$_2$O$_2$X (X = S, Se, Te). The SHG susceptibilities of Bi$_2$O$_2$X under strain are on the order of 1~nm/V, rivalling the highest values reported among 2D materials. This giant SHG response originates from gauge-invariant geometric quantities, including the quantum metric, shift vector, and triple phase product. The strain also induces a bandgap variation in Bi$_2$O$_2$X. Intriguingly, in Bi$_2$O$_2$Te, strain-induced bandgap tuning drives a transition from a semiconductor to a half-metal, and ultimately to a polar metal. Our findings present a unique platform that combines strain-tunable bandgap engineering with exceptional NLO properties, while also highlighting the crucial role of quantum geometry in enhancing SHG.

cond-mat.mtrl-sci↗

arXiv2024

Highly Polarizable Semiconductors and Universal Origin of Ferroelectricity in Materials with a Litharge-Type Structural Unit

We discover that a large family of [Pb$_2$F$_2$]- and [Bi$_2$O$_2$]-based mixed-anion materials with a litharge-type structural unit are highly polarizable layered semiconductors on the edge of ferroelectricity. First-principles calculations demonstrate that in this family of materials, compounds as diverse as PbFBr, BiOCl, BiCuOSe, Bi$_2$OS$_2$, and Bi$_5$O$_4$S$_3$Cl exhibit static dielectric constants an order of magnitude higher than typical semiconductors. Additionally, they undergo a ferroelectric transition when subjected to a few percent of tensile strain. The ferroelectric transitions of these materials are found to have a universal origin in the strong cross-bandgap hybridization of the cation $p$ orbitals, enabled by the cation 6s$^2$ lone-pair electrons and the litharge-type structure of the [Pb$_2$F$_2$] and [Bi$_2$O$_2$] layers, as demonstrated by the strain-induced ferroelectric transition in the archetypal litharge $α$-PbO. These results establish materials with a litharge-type structural unit as a large and versatile family of highly polarizable layered semiconductors in proximity to ferroelectricity, offering vast opportunities for multifunctional materials design.

cond-mat.mtrl-sci↗

arXiv2024

Phase engineering of giant second harmonic generation in Bi$_2$O$_2$Se

Two-dimensional (2D) materials with remarkable second-harmonic generation (SHG) hold promise for future on-chip nonlinear optics. Relevant materials with both giant SHG response and environmental stability are long-sought targets. Here, we demonstrate the enormous SHG from the phase engineering of a high-performance semiconductor, Bi$_2$O$_2$Se (BOS), under uniaxial strain. SHG signals captured in strained 20 nm-BOS films exceed those of NbOI$_2$ and NbOCl$_2$ of similar thickness by a factor of 10, and are four orders of magnitude higher than monolayer-MoS$_2$, resulting in a significant second-order nonlinear susceptibility on the order of 1 nm V$^{-1}$. Intriguingly, the strain enables continuous adjustment of the ferroelectric phase transition across room temperature. Consequently, an exceptionally large tunability of SHG, approximately six orders of magnitude, is achieved through strain or thermal modulation. This colossal SHG, originating from the geometric phase of Bloch wave functions and coupled with sensitive tunability through multiple approaches in this air-stable 2D semiconductor, opens new possibilities for designing chip-scale, switchable nonlinear optical devices.

cond-mat.mtrl-sci↗

arXiv2023

Chirality-induced spin splitting in 1D InSeI

Spin-orbit coupling in chiral materials can induce chirality-dependent spin splitting, enabling electrical manipulation of spin polarization. Here, we use first-principles calculations to investigate the electronic states of chiral one-dimensional (1D) semiconductor InSeI, which has two enantiomorphic configurations with left- and right-handedness. We find that opposite spin states exist in the left- and right-handed 1D InSeI with significant spin splitting and spin-momentum collinear locking. Although the spin states at the conduction band minimum (CBM) and valence band maximum (VBM) of 1D InSeI are both nearly degenerate, a direct-to-indirect bandgap transition occurs when a moderate tensile strain ($\sim$4%) is applied along the 1D chain direction, leading to a sizable spin splitting ($\sim$0.11 eV) at the CBM. These findings indicate that 1D InSeI is a promising material for chiral spintronics.

cond-mat.mtrl-sci↗

arXiv2023

Polar discontinuities and interfacial electronic properties of Bi$_2$O$_2$Se on SrTiO$_3$

The layered oxychalcogenide semiconductor Bi$_2$O$_2$Se (BOS) hosts a multitude of unusual properties including high electron mobility. Owing to similar crystal symmetry and lattice constants, the perovskite oxide SrTiO$_3$ (STO) has been demonstrated to be an excellent substrate for wafer-scale growth of atomically thin BOS films. However, the structural and electronic properties of the BOS/STO interface remain poorly understood. Here, through first-principles study, we reveal that polar discontinuities and interfacial contact configurations have a strong impact on the electronic properties of ideal BOS/STO interfaces. The lowest-energy [Bi-TiO$_2$] contact type, which features the contact between a Bi$_2$O$_2$ layer of BOS with the TiO$_2$-terminated surface of STO, incurs significant interfacial charge transfer from BOS to STO, producing a BOS/STO-mixed, $n$-type metallic state at the interface. By contrast, the [Se-SrO] contact type, which is the most stable contact configuration between BOS and SrO-terminated STO substrate, has a much smaller interfacial charge transfer from STO to BOS and exhibits $p$-type electronic structure with much weaker interfacial hybridization between BOS and STO. These results indicate that BOS grown on TiO$_2$-terminated STO substrates could be a fruitful system for exploring emergent phenomena at the interface between an oxychalcogenide and an oxide, whereas BOS grown on SrO-terminated substrates may be more advantageous for preserving the excellent intrinsic transport properties of BOS.

cond-mat.mtrl-sci↗