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Zsolt Benedek

Publications and source records attributed to Zsolt Benedek.

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Persistence and emergence of quantum defects through pressure-induced phase changes

Extreme pressures can transform materials and their properties, but probing these in-situ is made challenging by the small sample volumes and access requirements demanded by diamond anvil cells. Quantum defects offer a route to local measurements under such conditions, yet their sensing performance can be dictated by pressure-induced changes in their own host material. On the other hand, pressure may also be harnessed as a tool to engineer and stabilize new quantum defects with emergent functionalities. Here, we demonstrate both aspects within a unified platform based on optically active spin-pair defects in hexagonal boron nitride (hBN). As robust quantum sensors under pressure, these spin-1/2 systems retain pressure-independent spin resonances up to 20 GPa while maintaining or even enhancing their optical emission, in stark contrast to the spin-1 boron-vacancy centre in the same material. Simultaneously, we show that compression acts as a means of quantum defect engineering: the starting hBN undergoes an irreversible transformation into wurtzite boron nitride (wBN), during which the defect landscape is reconfigured. Spin-pair sensors are seen to persist across this structural transition, however, depending on the starting material we also observe new, highly fluorescent defects in the wBN phase. These results establish spin-pair defects in boron nitride as pressure-resilient quantum sensors while highlighting high pressure itself as a versatile pathway for creating and tuning quantum emitters.

cond-mat.mes-hall

Natural van der Waals silicates as hosts for telecom quantum emitters: the case of erbium-doped talc

Erbium ion is among the most promising solid-state single photon emitters and spin-photon interfaces for quantum networks, emitting directly in the telecom C-band in many host semiconductors. Recently, the search for scalable, low-noise host materials turned toward atomically thin and van der Waals materials that enable efficient integration with nanophotonic architectures. Here, we identify talc, a naturally occurring layered magnesium silicate, as a promising host for telecom-active erbium centers. Using first-principles density functional theory combined with multireference wavefunction calculations, we investigate the thermodynamic stability, electronic structure, crystal-field splitting, and optical transitions of erbium-related defects in talc. We find that substitutional incorporation of Er at Mg sites is energetically favourable over a wide range of Fermi-levels, leading predominantly to telecom C band emitting Er$^{3+}$ configuration. The characteristic ${^4}I_{13/2} \rightarrow {^4}I_{15/2}$ transition of Er$^{3+}$ is preserved in the talc environment and remains centred near 1.55 $\mu$m, while crystal-field interactions produce a Stark manifold suitable for spectrally selective optical addressing. The combination of thermodynamic stability, wide band gap, low background emission, and compatibility with van der Waals heterostructures suggests that erbium-doped talc constitutes a promising platform for integrated photonics in the C-band.

cond-mat.mtrl-sci

An extended ab initio theory of the V$_{\text{B}}^-$ center in hBN: excited states, Jahn-Teller distortion, and pressure dependence

Ensembles of negatively charged boron vacancy (V$_{\text{B}}^-$) centers in hexagonal boron nitride (hBN) have emerged as a two-dimensional spin qubit system interfaced with optics to advance nanoscale quantum sensing. However, a comprehensive description of its optically detected magnetic resonance (ODMR) signal remains challenging due to the strongly correlated nature of the excited electronic states involved in its optical cycle. In this work, we model the energetics, structural relaxation, and transition rates of the V$_{\text{B}}^-$ center using a high-level wave-function-based electron correlation method (CASSCF-NEVPT2). We provide a thorough analysis of the excited state fine structure and pseudo Jahn-Teller effects, singlet-triplet quasi-degeneracies, photoluminescence parameters, intersystem crossing pathways, and stress-dependence of the fine structure and decay parameters. Our findings not only clarify the fundamental behavior of the V$_{\text{B}}^-$ center in hBN but also establish the theoretical foundation for advancing the V$_{\text{B}}^-$ center's readout for integrated 2D quantum sensors.

cond-mat.mtrl-sci

Demonstration of the ODMR activity of the telecom range ClV center in SiC: a wavefunction theory analysis

Recently, density functional theory-based high-throughput screening of point defects in 4H-SiC revealed the positively charged chlorine-vacancy (ClV) defect to be a promising quantum bit candidate emitting at telecom wavelengths, with an electronic structure analogous to the well-known NV center in diamond. Furthermore, recent infrared photoluminescence (PL) measurements on chlorine-implanted 4H-SiC have revealed new PL lines associated with the ClV defect. While the defect possesses a high-spin ground state, there is a lack of evidence of optically detected magnetic resonance (ODMR), a key ingredient for optical spin initialization and readout. In this Letter, we employ a multireference wavefunction-based quantum chemistry method, specifically, second-order perturbation theory (NEVPT2) on top of a defect-localized many-body wavefunction (CASSCF), to explore the many-body electronic structure of the ClV center. We estimate photoluminescence, internal conversion, and intersystem crossing rates to investigate the possibility of spin polarization and ODMR activity. Our findings establish the ClV center in 4H-SiC as an optically addressable spin qubit with fiber optics compatibility in the technologically mature 4H-SiC host material, enabling the development of large-scale quantum networks.

cond-mat.mtrl-sci

Assessing the Reliability of Truncated Coupled Cluster Wavefunction: Estimating the Distance from the Exact Solution

A new approach is proposed to assess the reliability of the truncated wavefunction methods by estimating the deviation from the full configuration interaction (FCI) wavefunction. While typical multireference diagnostics compare some derived property of the solution with the ideal picture of a single determinant, we try to answer a more practical question, how far is the solution from the exact one. Using the density matrix renormalization group (DMRG) method to provide an approximate FCI solution for the self-consistently determined relevant active space, we compare the low-level CI expansions and one-body reduced density matrixes to determine the distance of the two solutions ($\tilde{d}_\Phi$, $\tilde{d}_\gamma$). We demonstrate the applicability of the approach for the CCSD method by benchmarking on the W4-17 dataset, as well as on transition metal-containing species. We also show that the presented moderate-cost, purely wavefunction-based metric is truly unique in the sense that it does not correlate with any popular multireference measures. We also explored the usage of CCSD natural orbitals ($\tilde{d}_{\gamma,\mathrm{NO}}$) and its effect on the active space size and the metric. The proposed diagnostic can also be applied to other wavefunction approximations, and it has the potential to provide a quality measure for post-Hartree-Fock procedures in general.

physics.chem-ph

Identifying high-energy electronic states of NV$^-$ centers in diamond

The negatively charged nitrogen-vacancy center in diamond is a prototype photoluminescent point defect spin qubit with promising quantum technology applications, enabled by its efficient optical spin polarization and readout. Its low-lying electronic states and optical spin polarization cycle have been well characterized over decades, establishing it as a benchmark system for state-of-the-art computational methods in point defect research. While the optical cycle is well understood, a comprehensive energetic analysis of higher-lying states has received less attention until recently. In this joint experimental theoretical study, we identify and characterize five high-energy states beyond those involved in the optical cycle. Using transient absorption spectroscopy, we determine their transition energies and relative oscillator strengths. Additionally, we perform two independent numerical studies employing two state-of-the-art post-DFT methods to support the experimental findings and assign energy levels. These results enhance our understanding of the NV center's energy spectrum and providing a broader reference for benchmarking high-level first-principles methods.

cond-mat.mtrl-sci

Accurate and convergent energetics of color centers by wavefunction theory

Ab initio description of point defects in semiconductors, characterized by in-gap states of significant multideterminant character, presents a longstanding theoretical challenge for density functional theory (DFT) methods. In this study, we devise a wavefunction theory (WFT) based ab initio methodology as a competing alternative approach. Specifically, we apply perturbation theory (NEVPT2 level) on top of a defect-localized many-body wavefunction (CASSCF level), which provides a balanced description of dynamic and static correlation effects, respectively. This quantum chemical methodology, exemplified for the NV$^-$ center in diamond in this study, is not only used for the calculation of energies and properties, but also for geometry optimization, performed for each electronic state individually. By relaxing cluster models of increasing size and investigating convergence behavior, we quantitatively reproduce (i) the full energy spectrum of NV$^-$ including the recently characterized high-energy states, (ii) the effect of Jahn-Teller distortion on measurable properties, (iii) the fine structure of ground and excited states, (iv) the pressure dependence of zero-phonon lines. Our findings showcase that applying conventional wave-function-based quantum chemistry on carefully crafted clusters can be a robust routine tool for discussing defect-state energetics.

cond-mat.mtrl-sci

First principles theory of the nitrogen interstitial in hBN: a plausible model for the blue emitter

Color centers in hexagonal boron nitride (hBN) have attracted considerable attention due to their remarkable optical properties enabling robust room temperature photonics and quantum optics applications in the visible spectral range. On the other hand, identification of the microscopic origin of color centers in hBN has turned out to be a great challenge that hinders in-depth theoretical characterization, on-demand fabrication, and development of integrated photonic devices. This is also true for the blue emitter, which is an irradiation damage in hBN emitting at 436 nm wavelengths with desirable properties. Here, we propose the negatively charged nitrogen split interstitial defect in hBN as a plausible microscopic model for the blue emitter. To this end, we carry out a comprehensive first principles theoretical study of the nitrogen interstitial. We carefully analyze the accuracy of first principles methods and show that the commonly used HSE hybrid exchange-correlation functional fails to describe the electronic structure of this defect. Using the generalized Koopman's theorem, we fine tune the functional and obtain a zero-phonon photoluminescence (ZPL) energy in the blue spectral range. We show that the defect exhibits high emission rate in the ZPL line and features a characteristic phonon side band that resembles the blue emitter's spectrum. Furthermore, we study the electric field dependence of the ZPL and numerically show that the defect exhibits a quadratic Stark shift for perpendicular to plane electric fields, making the emitter insensitive to electric field fluctuations in first order. Our work emphasize the need for assessing the accuracy of common first principles methods in hBN and exemplifies a workaround methodology. Furthermore, our work is a step towards understanding the structure of the blue emitter and utilizing it in photonics applications.

cond-mat.mtrl-sci

Symmetric carbon tetramers forming chemically stable spin qubits in hBN

Point defect quantum bits in semiconductors have the potential to revolutionize sensing at atomic scales. Currently, vacancy related defects, such as the NV center in diamond and the VB$^-$ in hexagonal boron nitride (hBN), are at the forefront of high spatial resolution and low dimensional sensing. On the other hand, vacancies' reactive nature and instability at the surface limit further developments. Here, we study the symmetric carbon tetramers in hBN and propose them as a chemically stable spin qubit for sensing in low dimensions. We utilize periodic-DFT and quantum chemistry approaches to reliably and accurately predict the electronic, optical, and spin properties of the studied defect. We show that the nitrogen centered symmetric carbon tetramer gives rise to spin state dependent optical signals with strain sensitive intersystem crossing rates. Furthermore, the weak hyperfine coupling of the defect to their spin environments results in a reduced electron spin resonance linewidth that may enhance sensitivity.

cond-mat.mtrl-sci

Towards large-scale restricted active space calculations inspired by the Schmidt decomposition

We present an alternative, memory-efficient, Schmidt decomposition-based description of the inherently bipartite restricted active space (RAS) scheme, which can be implemented effortlessly within the density matrix renormalization group (DMRG) method via the dynamically extended active space procedure. Benchmark calculations are compared against state-of-the-art results of C$_2$ and Cr$_2$, which are notorious for their multi-reference character. Our results for ground and excited states together with spectroscopic constants demonstrate that the proposed novel approach, dubbed as DMRG-RAS, which is variational and free of uncontrolled method errors, has the potential to outperfom conventional methods for strongly correlated molecules.

physics.chem-ph

Sensitivity of Coupled Cluster Electronic Properties on the Reference Determinant: Can Kohn-Sham Orbitals Be More Beneficial than Hartree-Fock Orbitals?

Coupled cluster calculations are traditionally performed over Hartree-Fock reference orbitals (HF-CC methodology). However, it has been repeatedly argued in the literature that the use of a Kohn-Sham reference (KS-CC methodology) might result in improved performance relative to HF-CC at the same computational cost. In the present theoretical study, we re-examine the relation of HF-CC and KS-CC methods by comparing the results of widely applied truncated CC calculations (CCSD, CCSD(T), CCSDT) to the limit of full configuration interaction (FCI), which in contrast to wave-function diagnostics with vague physical meaning or experimental data with considerable uncertainty serves as an undebatable reference point of accuracy. We find that apart from incidental exceptions, the Kohn-Sham referenced CC methods show systematic deterioration compared to HF-CC, that is, the KS-CC molecular properties (electronic energy and density) are always farther from the FCI limit than those obtained from HF-CC at the same coupled cluster level. Furthermore, the introduction of common approximations (frozen core, density fitting) to the CC calculation results in significantly higher errors in the case of KS reference. We conclude that the use of KS reference orbitals is not expected to increase the reliability of low-level CC energetics. Nevertheless, molecular errors from the components of the studied chemical reaction might fortunately cancel out resulting in illusory improvement compared to HF-CC. It is also notable that the choice of reference orbitals has negligible influence on the results at sufficiently high CC levels which can be estimated by test calculations or by the magnitude of double amplitudes. Therefore, the application of KS-CC is not unreasonable as it might bypass the difficulties of HF convergence.

physics.chem-ph