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Zsolt Majzik

Publications and source records attributed to Zsolt Majzik.

3 recordsLinked to original sources

Orbital-selective spin excitation of a magnetic porphyrin

Scattering of electrons by localized spins is the ultimate process enabling electrical detection and control of the magnetic state of a spin-doped material. At the molecular scale, this scattering is mediated by the electronic orbitals hosting the spin. Here we report the selective excitation of a molecular spin by electrons tunneling through different molecular orbitals. Spatially-resolved tunneling spectra on iron porphyrins on Au(111) reveal that the inelastic spin excitation extends beyond the iron site. The inelastic features also change shape and symmetry along the molecule. Combining DFT simulations with a phenomenological scattering model, we show that the extension and lineshape variations of the inelastic signal are due to excitation pathways assisted by different frontier orbitals, each of them with a different degree of hybridization with the surface. By selecting the intramolecular site for electron injection, the relative weight of iron and pyrrole orbitals in the tunneling process is modified. In this way, the spin excitation mechanism, reflected by its spectral lineshape, changes depending on the degree of localization and energy alignment of the chosen molecular orbital.

cond-mat.mes-hall

Passivation of dangling bonds on hydrogenated Si(100)-2$\times$1: a possible method for error correction in hydrogen lithography

Using combined low temperature scanning tunneling microscopy (STM) and atomic force microscopy (AFM), we demonstrate hydrogen passivation of individual, selected dangling bonds (DBs) on a hydrogen-passivated Si(100)-2$\times$1 surface (H-Si) by atom manipulation. This method allows erasing of DBs and thus provides an error-correction scheme for hydrogen lithography. Si-terminated tips (Si tips) for hydrogen desorption and H-terminated tips (H tips) for hydrogen passivation are both created by deliberate contact to the H-Si surface and are assigned by their characteristic contrast in AFM. DB passivation is achieved by transferring the H atom that is at the apex of an H tip to the DB, reestablishing a locally defect-free H-Si surface.

cond-mat.mtrl-sci

Combined AFM and STM measurements of a silicene sheet grown on Ag(111) surface

In this Letter, we present the first non-contact atomic force microscopy (nc-AFM) of a silicene on silver (Ag) surface, obtained by combining non-contact atomic force microscopy (nc-AFM) and scanning tunneling microscopy (STM). STM images over large areas of silicene grown on Ag(111) surface show both (sqrt13xsqrt13)R13.9° and (4x4) superstructures. For the widely observed (4x4) structure, the nc-AFM topography shows an atomic-scale contrast inversion as the tip-surface distance is decreased. At the shortest tip-surface distance, the nc-AFM topography is very similar to the STM one. The observed structure in the nc-AFM topography is compatible with only one out of two silicon atoms being visible. This indicates unambiguously a strong buckling of the silicene honeycomb layer.

cond-mat.mtrl-sci