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Zuanming Jin

Publications and source records attributed to Zuanming Jin.

9 recordsLinked to original sources

A Digital and Compact High-Precision Locking System for Pulse Laser Repetition Frequency

This paper proposes a novel approach that employs error amplification and ADC-based dual-mixer time-difference (ADC-based-DMTD) technique for high-precision locking of laser repetition frequency with compact size. This electronic system consists of two main components: a digitized error amplification module (EAM) and an FPGA-based digital frequency locking module (DFLM). The EAM mainly integrates a configurable frequency generator (CFG), a configurable frequency multiplier (CFM) and a mixer to process the laser pulses and a high-stability reference source (e.g., an atomic clock), enabling high-precision locking of pulse lasers operating at different repetition frequencies. By employing frequency multiplication and mixing, the EAM amplifies the laser's frequency error and performs frequency down-conversion, enhancing measurement sensitivity and reducing the hardware requirements of the back-end. The DFLM receives the EAM outputs by using an ADC-based-DMTD method to precisely measure frequency errors, then the digital proportional-integral-derivative (PID) controller provides feedback to achieve accurate frequency locking. Initial testing with a voltage-controlled oscillator (VCO) demonstrated excellent locking performance, achieving an Allan deviation of $9.58 \times 10^{-14}$ at 10 seconds and a standard deviation (STD) of 7.7 \textmu Hz root mean square (RMS) after locking, marking a five-order-of-magnitude stability enhancement. In laboratory experiments with a custom-built femtosecond fiber laser, the system achieved robust locking of the repetition frequency, with a stability improvement from $1.51 \times 10^{-7}$ to $1.12 \times 10^{-12}$ at a 10-second gate time and an STD of 0.43 mHz RMS after locking.

physics.optics

Defect-induced helicity-dependent terahertz emission in Dirac semimetal PtTe2 thin films

Nonlinear transport enabled by symmetry breaking in quantum materials has aroused considerable interest in condensed matter physics and interdisciplinary electronics. However, the nonlinear optical response in centrosymmetric Dirac semimetals via the defect engineering has remained highly challenging. Here, we observe the helicity-dependent terahertz (THz) emission in Dirac semimetal PtTe2 thin films via circular photogalvanic effect (CPGE) under normal incidence. This is activated by artificially controllable out-of-plane Te-vacancy defect gradient, which is unambiguously evidenced by the electron ptychography. The defect gradient lowers the symmetry, which not only induces the band spin splitting, but also generates the giant Berry curvature dipole (BCD) responsible for the CPGE. Such BCD-induced helicity-dependent THz emission can be manipulated by the Te-vacancy defect concentration. Furthermore, temperature evolution of the THz emission features the minimum of the THz amplitude due to the carrier compensation. Our work provides a universal strategy for symmetry breaking in centrosymmetric Dirac materials for efficient nonlinear transport and facilitates the promising device applications in integrated optoelectronics and spintronics.

cond-mat.mtrl-sci

Anomalous Nernst effect induced terahertz emission in a single ferromagnetic film

By developing a bidirectional-pump terahertz (THz) emission spectroscopy, we reveal an anomalous Nernst effect (ANE) induced THz emission in a single ferromagnetic film. Based on the distinctive symmetry of the THz signals, ANE is unequivocally distinguished from the previously attributed ultrafast demagnetization and anomalous Hall effect mechanisms. A quantitative method is established to separate the different contributions, demonstrating a significant ANE contribution that even overwhelms other competing mechanisms. Our work not only clarifies the origin of the ferromagnetic-based THz emission, but also offers a fertile platform for investigating the ultrafast magnetism and THz spintronics.

cond-mat.mes-hall

Transition of laser-induced terahertz spin currents from torque- to conduction-electron-mediated transport

Spin transport is crucial for future spintronic devices operating at bandwidths up to the terahertz (THz) range. In F|N thin-film stacks made of a ferro/ferrimagnetic layer F and a normal-metal layer N, spin transport is mediated by (1) spin-polarized conduction electrons and/or (2) torque between electron spins. To identify a cross-over from (1) to (2), we study laser-driven spin currents in F|Pt stacks where F consists of model materials with different degrees of electrical conductivity. For the magnetic insulators YIG, GIG and maghemite, identical dynamics is observed. It arises from the THz interfacial spin Seebeck effect (SSE), is fully determined by the relaxation of the electrons in the metal layer and provides an estimate of the spin-mixing conductance of the GIG/Pt interface. Remarkably, in the half-metallic ferrimagnet Fe3O4 (magnetite), our measurements reveal two spin-current components with opposite direction. The slower, positive component exhibits SSE dynamics and is assigned to torque-type magnon excitation of the A- and B-spin sublattices of Fe3O4. The faster, negative component arises from the pyro-spintronic effect and can consistently be assigned to ultrafast demagnetization of e-sublattice minority-spin hopping electrons. This observation supports the magneto-electronic model of Fe3O4. In general, our results provide a new route to the contact-free separation of torque- and conduction-electron-mediated spin currents.

cond-mat.mes-hall

Ultrastrong Magnon-Magnon Coupling Dominated by Antiresonant Interactions

Exotic quantum vacuum phenomena are predicted in cavity quantum electrodynamics (QED) systems with ultrastrong light-matter interactions. Their ground states are predicted to be vacuum squeezed states with suppressed quantum fluctuations. The source of such phenomena are antiresonant terms in the Hamiltonian, yet antiresonant interactions are typically negligible compared to resonant interactions in light-matter systems. We report an unusual coupled matter-matter system of magnons that can simulate a unique cavity QED Hamiltonian with coupling strengths that are easily tunable into the ultrastrong coupling regime and with dominant antiresonant terms. We found a novel regime where vacuum Bloch-Siegert shifts, the hallmark of antiresonant interactions, greatly exceed analogous frequency shifts from resonant interactions. Further, we theoretically explored the system's ground state and calculated up to 5.9 dB of quantum fluctuation suppression. These observations demonstrate that magnonic systems provide an ideal platform for simulating exotic quantum vacuum phenomena predicted in ultrastrongly coupled light-matter systems.

quant-ph

Observation of Negative THz Photoconductivity in Large Area Type-II Dirac Semimetal PtTe2

As a newly emergent type-II Dirac semimetal, Platinum Telluride (PtTe2) stands out from other 2D noble-transition-metal dichalcogenides for the unique structure and novel physical properties, such as high carrier mobility, strong electron-phonon coupling and tunable bandgap, which make the PtTe2 a good candidate for applications in optoelectronics, valleytronics and far infrared detectors. Although the transport properties of PtTe2 have been studied extensively, the dynamics of the nonequilibrium carriers remain nearly uninvestigated. Herein we employ optical pump-terahertz (THz) probe spectroscopy (OPTP) to systematically study the photocarrier dynamics of PtTe2 thin films with varying pump fluence, temperature, and film thickness. Upon photoexcitation the THz photoconductivity (PC) of 5 nm PtTe2 film shows abrupt increase initially, while the THz PC changes into negative value in a subpicosecond time scale, followed by a prolonged recovery process that lasted hundreds of picoseconds (ps). This unusual THz PC response observed in the 5 nm PtTe2 film was found to be absent in a 2 nm PtTe2 film. We assign the unexpected negative THz PC as the small polaron formation due to the strong electron-Eg-mode phonon coupling, which is further substantiated by pump fluence- and temperature-dependent measurements as well as the Raman spectroscopy. Moreover, our investigations give a subpicosecond time scale of sequential carrier cooling and polaron formation. The present study provides deep insights into the underlying dynamics evolution mechanisms of photocarrier in type-II Dirac semimetal upon photoexcitation, which is fundamental importance for designing PtTe2-based optoelectronic devices.

cond-mat.mtrl-sci

Terahertz emission in the van der Waals magnet CrSiTe3

The van der Waals magnet CrSiTe3 (CST) has captured immense interest because it is capable of retaining the long-range ferromagnetic order even in its monolayer form, thus offering potential use in spintronic devices. Bulk CST crystal has inversion symmetry that is broken on the crystal surface. Here, by employing ultrafast terahertz (THz) emission spectroscopy and time resolved THz spectroscopy, the THz emission of the CST crystal was investigated, which shows a strong THz emission from the crystal surface under femtosecond (fs) pulse excitation at 800 nm. Theoretical analysis based on space symmetry of CST suggests the dominant role of shift current occurring on the surface with a thickness of a few quintuple layers in producing the THz emission, in consistence with the experimental observation that the emitted THz amplitude strongly depends on the azimuthal and pumping polarization angles. The present study offers a new efficient THz emitter as well as a better understanding of the nonlinear optical response of CST. It hopefully will open a window toward the investigation on the nonlinear optical response in the mono-/few-layer van der Waals crystals with low-dimensional magnetism.

physics.optics

Probing the Charge Separation Process on In2S3/Pt-TiO2 Nanocomposites for Boosted Visible-light Photocatalytic Hydrogen Production

A simple refluxing wet-chemical approach is employed for fabricating In2S3/Pt-TiO2 heterogeneous catalysts for hydrogen generation under visible light irradiation. When the mass ratio between Pt-TiO2 and cubic-phased In2S3 (denoted as In2S3/Pt-TiO2) is two, the composite catalyst shows the highest hydrogen production, which exhibits an 82-fold enhancement over in-situ deposited Pt-In2S3. UV-vis diffuse reflectance and valence band X-ray photoelectron spectra elucidate that the conduction band of In2S3 is 0.3 eV more negative compared to that of TiO2, favoring charge separation in the nanocomposites. Photoelectrochemical transient photo-current measurements and optical pump - terahertz probe spectroscopic studies further corroborate the charge separation in In2S3/Pt-TiO2. The migration of photo-induced electrons from the In2S3 conduction band to the TiO2 conduction band and subsequently into the Pt nanoparticles is found to occur within 5 picoseconds. Based on the experimental evidence, a charge separation process is proposed which accounts for the enhanced activity exhibited by the In2S3/Pt-TiO2 composite catalysts.

physics.chem-ph

Electron spin relaxation in intrinsic bulk InP semiconductor

Electron spin dynamics in intrinsic bulk Indium Phosphide (InP) semiconductor is studied by time resolved pump probe reflectivity (TRPPR) technique using the co- and counter-circularly polarized femtosecond pulses at room temperature and 70 K. The reflectivity change from bleaching into absorption is observed with increasing pump photon energy, which can be explained in terms of the spin sensitive band filling and band gap renormalization effects. Density dependence of electron spin relaxation time shows similar tendency at room temperature and 70 K. With increasing carrier density, the electron spin relaxation time increases and then decreases after reaching a maximum value. Our experimental results agree well with the recent theoretical prediction [Jiang and Wu, Phys. Rev. B 79, 125206 (2009)] and D'yakonov-Perel' mechanism is considered as a dominating contribution to the electron spin relaxation in intrinsic bulk InP semiconductor.

physics.optics