arXiv subjects

Zuhuang Chen

Publications and source records attributed to Zuhuang Chen.

At least 19 recordsLinked to original sources

arXiv2026

Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering

Antiferroelectrics exhibit reversible antipolar-polar transformations, offering a compelling platform for multiple functionalities in modern nanoelectronics, yet deterministic control of antiferroelectric domains and switching pathways remain elusive. Moreover, their integration with ubiquitous silicon-based electronic devices has been limited by the structural and chemical incompatibilities of conventional oxide platforms. Here, we convert the conventional drawback of thermal mismatch into a functional advantage and realize ideal antiferroelectricity in epitaxial PbZrO3 thin films on silicon through thermal tensile-strain engineering, a strain regime unattainable on conventional perovskite substrates. Combined theoretical and experimental studies show that tensile strain stabilizes the (004)o domain, enabling a direct one-step switching, whereas compressive-strain-stabilized (240)o domains switch through intermediate ferrielectric states. The resulting films exhibit near-zero remanent polarization, square double hysteresis, nanosecond switching (~75ns), large reversible electrostrain (~0.6%) and robust operation windows. These findings provide key insights into domain-engineered ideal antiferroelectricity on silicon, opening a viable route toward high-performance antiferroelectric nano-electronic devices.

cond-mat.mtrl-sci↗

arXiv2026

Unlocking Cryogenic Energy Storage by Constructing Dipole Glass with Unit-cell-level Polar Disorder

Cryogenic energy storage is vital for frontier technologies including deep-space exploration and quantum computing, yet conventional electrochemical energy systems fail below ~230 K due to frozen ion migration. While relaxor-based dielectric capacitors provide high efficiency at room temperature, the intrinsic freezing/growth of polar nanodomains at extended cryogenic regime limits their applications with deteriorated hysteresis losses. Here, we realize superior cryogenic energy-storage performance by designing unit-cell-level disordered dipole-glass state in Pb0.6Sr0.4ZrO3 thin films with composition near antiferroelectric-paraelectric phase boundary. The antiferroelectric-derived dipole-glass introduces enhanced unit-cell-level complexity of dipole interaction that suppresses long-range ferroelectric order. This enables ultralow-hysteresis operation (efficiency > 88%) down to 4 K, delivering record-high energy density (211 J/cm^3) at 9 MV/cm, stability over 10^8 charge/discharge cycles and microsecond-scale charge/discharge capability. This work establishes a dipole-glass paradigm for cryogenic dielectric capacitors, opening a new avenue to highly-efficient energy-storage systems with broad applications in frontier nanoelectronics.

cond-mat.mtrl-sci↗

arXiv2026

Origin of Anomalous Size Effects in Ferroelectric Hafnia Thin Films

The persistence of ferroelectricity in ultrathin HfO$_2$ films challenges conventional theories, particularly given the paradoxical observation that the out-of-plane lattice spacing increases as the film thickness decreases, an anomalous size effect absent in perovskite ferroelectrics. Here, we resolve this puzzle by revealing that this lattice expansion is counterintuitively coupled to a suppressed out-of-plane polarization. First-principles calculations combined with analytical modeling identify two mechanisms behind this expansion: a negative longitudinal piezoelectric response to the residual depolarization field and a positive surface stress that becomes significant at reduced thickness. Their interplay quantitatively reproduces the experimentally observed lattice expansion. Furthermore, (111)-oriented HfO$_2$ films can support out-of-plane polarization even under open-circuit conditions, in contrast to (001) films that stabilize a nonpolar ground state. This behavior points to the emergence of orientation-induced hyperferroelectricity, an unrecognized mechanism that enables polarization persistence through orientation engineering without electrode screening. We further demonstrate that this principle generalizes to conventional perovskites such as PbTiO$_3$, offering a strategy to eliminate the critical thickness limit by choosing the appropriate film orientation. As a practical pathway to device integration, we also identify the two-dimensional electride Ca$_2$N as a near-ideal electrode that fully restores the ferroelectric properties of HfO$_2$ in ultrathin capacitors.

cond-mat.mtrl-sci↗

arXiv2026

Nitrogen doping induced metal-insulator transition with iso-symmetric character in rutile VO2

Metal-insulator transitions (MITs) in correlated oxides offer immense potential for next-generation Mottronic devices. However, their integration into practical applications is often hindered by the coupling of MITs with symmetry-lowering structural phase transitions, which limits switching speed and endurance. In this study, we engineered an iso-symmetric MIT on average in epitaxial rutile VO2 thin films via an in-situ nitrogen doping strategy. Nitrogen incorporation effectively suppresses V-V dimerization, enabling an iso-symmetric MIT, while preserving the original crystal symmetry. Furthermore, in-operando time-resolved optical reflectivity measurements revealed a shortened switching time in nitrogen-doped films, highlighting their enhanced performance. Our findings provide critical insights into the underlying mechanisms of MITs and introduce anion doping as a powerful tool for tailoring phase transitions in strongly correlated electron systems. This approach opens new avenues for the development of high-performance electronic and photonic devices.

cond-mat.mtrl-sci↗

arXiv2026

Decoupling effects of the resistive-switching behavior on the polarization reversal in ultrathin ferroelectric Hf0.5Zr0.5O2 films

HfO2-based ferroelectric films have attracted considerable attention as their nanoscale ferroelectricity and compatibility with cmos technology, fulfilling demands of emerging memory technologies. However, as films scale down, resistive-switching behavior becomes increasingly pronounced, intricately intertwining with the polarization-switching process and affecting ferroelectric switching factors often overlooked yet crucial for device performance optimization. By characterizing resistive-switching behavior and oxygen vacancy motion using tailored electric pulse schemes, we decouple the resistive-switching behavior from the overall switching process in ultrathin ferroelectric HZO films, which would otherwise erroneously inflate polarization values and increase coercive fields. Building on this, we elucidate endurance degradation mechanisms from dual perspectives of resistive switching and defect migration. Furthermore, we demonstrate the mitigated resistive switching activity by designing HfO2-based devices with symmetric oxide electrodes, achieving reduced coercive fields and improved cycling performances. This work provides crucial insights into the origins of inflated polarizations and reliability challenges in HfO2-based devices while offering a viable strategy to enhance ferroelectric properties for advanced memory applications.

cond-mat.mtrl-sci↗

arXiv2025

Atomistic Structure of Transient Switching States in Ferroelectric AlScN

We resolve the microscopic mechanism of polarization switching in wurtzite ferroelectric AlScN by integrating advanced thin-film fabrication, ferroelectric switching dynamics characterizations, high-resolution scanning transmission electron microscopy (STEM), and large-scale molecular dynamics simulations enabled by a deep neural network-based interatomic potential. Contrary to earlier interpretations proposing a transient nonpolar intermediate phase, we demonstrate that the broad transitional regions previously observed in STEM images are projection artifacts resulting from the intrinsic three-dimensional zigzag morphology of 180$^\circ$ domain walls, which are a characteristic form of inversion domain boundary. This is further confirmed by STEM imaging of strategically prepared, partially switched Al$_{0.75}$Sc$_{0.25}$N thin films. Our simulations reveal that switching proceeds through collective, column-by-column atomic displacements, directly explaining the emergence of zigzag-shaped domain walls, and is consistent with the nucleation-limited switching behavior observed in experimental switching dynamic measurements. Furthermore, we show that increasing Sc content systematically lowers domain wall energy and associated nucleation barrier, thereby reducing the switching field in agreement with experimental trends. These findings establish a direct connection between local domain wall structure, switching kinetics, and macroscopic ferroelectric behavior.

cond-mat.mtrl-sci↗

arXiv2025

Enhancing ferroelectric stability: Wide-range of adaptive control in epitaxial HfO2/ZrO2 superlattices

The metastability of the polar phase in HfO2, despite its excellent compatibility with the complementary metal-oxide-semiconductor process, remains a key obstacle for its industrial applications. Traditional stabilization approaches, such as doping, often induce crystal defects and impose constraints on the thickness of ferroelectric HfO2 thin films. These limitations render the ferroelectric properties vulnerable to degradation, particularly due to phase transitions under operational conditions. Here, we demonstrate robust ferroelectricity in high-quality epitaxial (HfO2)n/(ZrO2)n superlattices, which exhibit significantly enhanced ferroelectric stability across an extended thickness range. Optimized-period superlattices maintain stable ferroelectricity from up to 100 nm, excellent fatigue resistance exceeding 109 switching cycles, and a low coercive field of ~0.85 MV/cm. First-principles calculations reveal that the kinetic energy barrier of phase transition and interfacial formation energy are crucial factors in suppressing the formation of non-polar phases. This work establishes a versatile platform for exploring high-performance fluorite-structured superlattices and advances the integration of HfO2-based ferroelectrics into a broader range of applications.

cond-mat.mtrl-sci↗

arXiv2025

Ideal antiferroelectricity with large digital electrostrain in PbZrO3 epitaxial thin films

Antiferroelectrics exhibit reversible antipolar-polar phase transitions under electric fields, yielding large electrostrain suitable for electromechanical devices. Nevertheless, in thin-film form, the antiferroelectric behavior is often obscured by competing ferroic orders, resulting in slanted hysteresis loops with undesired remnant polarization, subsequently posing challenges in obtaining ideal antiferroelectricity and understanding their intrinsic electrical behavior. Here, atomistic models for controllable antiferroelectric-ferroelectric phase transition pathways are unveiled along specific crystallographic directions. Guided by the anisotropic phase transition and orientation design, we achieved ideal antiferroelectricity with square double hysteresis loop, large saturated polarization (~60 μC/cm2), near-zero remnant polarization, fast response time (~75 ns), and near-fatigue-free performance (~10^10 cycles) in (111)P-oriented PbZrO3 epitaxial thin films. Moreover, a bipolar and frequency-independent digital electrostrain (~0.83%) were demonstrated in this architype antiferroelectric system. In-situ X-ray diffraction studies further reveal that the large digital electrostrain results from intrinsic field-induced antiferroelectric-ferroelectric structural transition. This work demonstrates the anisotropic phase transition mechanism and ideal antiferroelectricity with large digital electrostrain in antiferroelectric thin films, offering a new avenue for applications of antiferroelectricity in nanoelectromechanical systems.

cond-mat.mtrl-sci↗

arXiv2025

Theoretical lower limit of coercive field in ferroelectric hafnia

The high coercive field ($E_c$) of hafnia-based ferroelectrics presents a major obstacle to their applications. The ferroelectric switching mechanisms in hafnia that dictate $E_c$, especially those related to domain nucleation in the Nucleation-Limited-Switching (NLS) model and domain wall motion in the Kolmogorov-Avrami-Ishibas (KAI) model, have remained elusive. We develop a deep-learning-assisted multiscale approach, incorporating atomistic insights into the critical nucleus, to predict both NLS- and KAI-type coercive fields. The theoretical NLS-type $E_c$ values agree with previous experimental results as well as our own measurements and also exhibit the correct thickness scaling for films between 3 and 20 nm. Combined theoretical and experimental investigations reveal that the giant $E_c$ in hafnia-based ferroelectrics arises from the ultra-thin geometry, which confines switching to the NLS mechanism. We predict that the theoretical lower limit for KAI-type $E_c$ is 0.1 MV/cm arsing from mobile domain walls. The activation of KAI-type switching to achieve lower $E_c$ is supported by our experimental demonstration of a low coercive field of 1 MV/cm in a 60 nm ferroelectric (HfO$_2$)$_n$/(ZrO$_2$)$_n$ ($n=3$ unit cells) superlattices. These findings establish a comprehensive framework for understanding ferroelectric switching in hafnia and highlight the potential of geometry and domain-wall engineering to achieve low-$E_c$ devices.

cond-mat.mtrl-sci↗

arXiv2025

Small polarons mediated near-room-temperature metal-insulator transition in vanadium dioxide and their hopping dynamics

Researchers pursuing advanced photoelectric devices have discovered near room-temperature metal-insulator transitions (MIT) in non-volatile VO2. Despite theoretical investigations suggesting that polaron dynamics mediate the MIT, direct experimental evidence remains scarce. In this study, we present direct evidence of the polaron state in insulating VO2 through high-resolution spectroscopic ellipsometry measurements and first-principles calculations. We illustrate the complementary role of polaron dynamics in facilitating Peierls and Mott transitions, thereby contributing to the MIT processes. Furthermore, our observations and characterizations of conventional metallic and correlated plasmons in the respective phases of the VO2 film offer valuable insights into their electron structures. This investigation enhances comprehension of the MIT mechanism in correlated systems and underscores the roles of polarons, lattice distortions, and electron correlations in facilitating phase transition processes in strongly-correlated systems. Additionally, the detailed detection of small polarons and plasmons serves as inspiration for the development of new device functionalities.

physics.app-ph↗

arXiv2025

Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design

Due to traits of CMOS compatibility and scalability, HfO2-based ferroelectrics are promising candidates for next-generation memory devices. However, their commercialization has been greatly hindered by reliability issues, with fatigue being a major impediment. We report the fatigue-free behavior in interface-designed Hf0.5Zr0.5O2-based heterostructures. A coherent CeO2-x/Hf0.5Zr0.5O2 heterointerface is constructed, wherein CeO2-x acts as an oxygen sponge, capable of reversibly accepting and releasing oxygen vacancies. This design effectively alleviates defect aggregation at the electrode-ferroelectric interface, enabling improved switching characteristics. Further, a symmetric capacitor architecture is designed to minimize the imprint, thereby suppressing the cycling-induced oriented defect drift. The two-pronged technique mitigates oxygen-voltammetry-generated chemical/energy fluctuations, suppressing the formation of paraelectric phase and polarization degradation. The design ensures a fatigue-free feature exceeding 10^11 switching cycles and an endurance lifetime surpassing 10^12 cycles for Hf0.5Zr0.5O2-based capacitors, along with excellent temperature stability and retention. These findings pave the way for developing ultra-stable hafnia-based ferroelectric devices.

cond-mat.mtrl-sci↗

arXiv2024

Large Enhancement of Properties in Strained Lead-free Multiferroic Solid Solutions with Strong Deviation from Vegard's Law

Efforts to combine the advantages of multiple systems to enhance functionlities through solid solution design present a great challenge due to the constraint imposed by the classical Vegard law. Here, we successfully navigate this trade off by leveraging the synergistic effect of chemical doping and strain engineering in solid solution system of BiFeO3 BaTiO3. Unlike bulks, a significant deviation from the Vegard law accompanying with enhanced multiferroism is observed in the strained solid solution epitaxial films, where we achieve a pronounced tetragonality, enhanced saturated magnetization, substantial polarization, high ferroelectric Curie temperature, all while maintaining impressively low leakage current. These characteristics surpass the properties of their parent BiFeO3 and BaTiO3 films. Moreover, the superior ferroelectricity has never been reported in corresponding bulks. These findings underscore the potential of strained BiFeO3 BaTiO3 films as lead-free, room-temperature multiferroics.

cond-mat.mtrl-sci↗

arXiv2024

Enhanced polarization switching characteristics of HfO2 ultrathin films via acceptor-donor co-doping

In the realm of ferroelectric memories, HfO2-based ferroelectrics stand out because of their exceptional CMOS compatibility and scalability. Nevertheless, their switchable polarization and switching speed are not on par with those of perovskite ferroelectrics. It is widely acknowledged that defects play a crucial role in stabilizing the metastable polar phase of HfO2. Simultaneously, defects also pin the domain walls and impede the switching process, ultimately rendering the sluggish switching of HfO2. Herein, we present an effective strategy involving acceptor-donor co-doping to effectively tackle this dilemma. Remarkably enhanced ferroelectricity and the fastest switching process ever reported among HfO2 polar devices are observed in La3+-Ta5+ co-doped HfO2 ultrathin films. Moreover, robust macro-electrical characteristics of co-doped films persist even at a thickness as low as 3 nm, expanding potential applications of HfO2 in ultrathin devices. Our systematic investigations further demonstrate that synergistic effects of uniform microstructure and smaller switching barrier introduced by co-doping ensure the enhanced ferroelectricity and shortened switching time. The co-doping strategy offers an effective avenue to control the defect state and improve the ferroelectric properties of HfO2 films.

cond-mat.mtrl-sci↗

arXiv2023

Antiferroelectric Oxide Thin-Films: Fundamentals, Properties, and Applications

Antiferroelectrics have received blooming interests because of a wide range of potential applications in energy storage, solid-state cooling, thermal switch, transducer, actuation, and memory devices. Many of those applications are the most prospective in thin film form. The antiferroelectric ordering in thin films is highly sensitive to a rich set of factors, such as lattice strain, film thickness, surface and interface effects as well as film stoichiometry. To unlock the full potential of these materials and design high-quality thin films for functional devices, a comprehensive and systematic understanding of their behavior is essential. In conjunction with the necessary fundamental background of antiferroelectrics, we review recent progress on various antiferroelectric oxide thin films, the key parameters that trigger their phase transition and the device applications that rely on the robust responses to electric, thermal, and optical stimuli. Current challenges and future perspectives highlight new and emerging research directions in this field. It is hoped that this review can boost the development of antiferroelectric thin-film materials and device design, stimulating more researchers to explore the unknowns together.

cond-mat.mtrl-sci↗

arXiv2023

Challenges for density functional theory in simulating metal-metal singlet bonding: a case study of dimerized VO2

VO2 is renowned for its electric transition from an insulating monoclinic (M1) phase characterized by V-V dimerized structures, to a metallic rutile (R) phase above 340 Kelvin. This transition is accompanied by a magnetic change: the M1 phase exhibits a non-magnetic spin-singlet state, while the R phase exhibits a state with local magnetic moments. Simultaneous simulation of the structural, electric, and magnetic properties of this compound is of fundamental importance, but the M1 phase alone has posed a significant challenge to density functional theory (DFT). In this study, we show none of the commonly used DFT functionals, including those combined with on-site Hubbard U to better treat 3d electrons, can accurately predict the V-V dimer length. The spin-restricted method tends to overestimate the strength of the V-V bonds, resulting in a small V-V bond length. Conversely, the spin-symmetry-breaking method exhibits the opposite trends. Each bond-calculation method underscores one of the two contentious mechanisms, i.e., Peierls or Mott, involved in the metal-insulator transition in VO2. To elucidate the challenges encountered in DFT, we also employ an effective Hamiltonian that integrates one-dimensional magnetic sites, thereby revealing the inherent difficulties linked with the DFT computations.

cond-mat.mtrl-sci↗

arXiv2023

Hexagonal close-packed polar-skyrmion lattice in ultrathin ferroelectric PbTiO3 films

Polar skyrmions are topologically stable, swirling polarization textures with particle-like characteristics, which hold promise for next-generation, nanoscale logic and memory. While understanding of how to create ordered polar skyrmion lattice structures and how such structure respond to applied electric fields, temperature, and film thickness remains elusive. Here, using phase-field simulations, the evolution of polar topology and the emergence of a phase transition to a hexagonal close-packed skyrmion lattice is explored through the construction of a temperature-electric field phase diagram for ultrathin ferroelectric PbTiO3 films. The hexagonal-lattice skyrmion crystal can be stabilized under application of an external, out-of-plane electric field which carefully adjusts the delicate interplay of elastic, electrostatic, and gradient energies. In addition, the lattice constants of the polar skyrmion crystals are found to increase with film thickness, consistent with expectation from Kittel law. Our studies pave the way for the development of novel ordered condensed matter phases assembled from topological polar textures and related emergent properties in nanoscale ferroelectrics.

cond-mat.mtrl-sci↗

arXiv2023

Spin State Disproportionation in Insulating Ferromagnetic LaCoO3 Epitaxial Thin Films

The origin of insulating ferromagnetism in epitaxial LaCoO3 films under tensile strain remains elusive despite extensive research efforts have been devoted. Surprisingly, the spin state of its Co ions, the main parameter of its ferromagnetism, is still to be determined. Here, we have systematically investigated the spin state in epitaxial LaCoO3 thin films to clarify the mechanism of strain induced ferromagnetism using element-specific x-ray absorption spectroscopy and dichroism. Combining with the configuration interaction cluster calculations, we unambiguously demonstrate that Co3+ in LaCoO3 films under compressive strain (on LaAlO3 substrate) are practically a low spin state, whereas Co3+ in LaCoO3 films under tensile strain (on SrTiO3 substrate) have mixed high spin and low spin states with a ratio close to 1:3. From the identification of this spin state ratio, we infer that the dark strips observed by high-resolution scanning transmission electron microscopy indicate the position of Co3+ high spin state, i.e., an observation of a spin state disproportionation in tensile-strained LaCoO3 films. This consequently explains the nature of ferromagnetism in LaCoO3 films.

cond-mat.mtrl-sci↗

arXiv2019

Nanosecond Optically Induced Phase Transformation in Compressively Strained BiFeO3 on LaAlO3

Above-bandgap optical illumination induces a transformation from tilted tetragonal-like (T-like) and rhombohedral-like (R-like) phases to an untilted T-like phase in compressively strained BiFeO3. Optical excitation leads to an out-of-plane lattice expansion in the T-like phase. The transformation proceeds in regions with boundaries between the T-like and tilted R-like and tilted T-like phases, consistent with the motion of a boundary. The optically induced transformation indicates that there are new optically driven routes towards nanosecond-scale control of phase transformations in ferroelectrics and multiferroics.

cond-mat.mes-hall↗