arXiv subjects

Zuo Feng

Publications and source records attributed to Zuo Feng.

4 recordsLinked to original sources

arXiv2024

Commensurate and Incommensurate Chern Insulators in Magic-angle Bilayer Graphene

The interplay between strong electron-electron interaction and symmetry breaking can have profound influence on the topological properties of materials. In magic angle twisted bilayer graphene (MATBG), the flat band with a single SU(4) flavor associated with the spin and valley degrees of freedom gains non-zero Chern number when C2z symmetry or C2zT symmetry is broken. Electron-electron interaction can further lift the SU(4) degeneracy, leading to the Chern insulator states. Here we report a complete sequence of zero-field Chern insulators at all odd integer fillings (v = +-1, +-3) with different chirality (C = 1 or -1) in hBN aligned MATBG which structurally breaks C2z symmetry. The Chern states at hole fillings (v = -1, -3), which are firstly observed in this work, host an opposite chirality compared with the electron filling scenario. By slightly doping the v = +-3 states, we have observed new correlated insulating states at incommensurate moir\'e fillings which is highly suggested to be intrinsic Wigner crystals according to our theoretical calculations. Remarkably, we have observed prominent Streda-formula violation around v = -3 state. By doping the Chern gap at v = -3 with notable number of electrons at finite magnetic field, the Hall resistance Ryx robustly quantizes to ~ h/e2 whereas longitudinal resistance Rxx vanishes, indicating that the chemical potential is pinned within a Chern gap, forming an incommensurate Chern insulator. By providing the first experimental observation of zero-field Chern insulators in the flat valence band, our work fills up the overall topological framework of MATBG with broken C2z symmetry. Our findings also demonstrate that doped topological flat band is an ideal platform to investigate exotic incommensurate correlated topological states.

cond-mat.mes-hall↗

arXiv2024

Rapid infrared imaging for rhombohedral graphene

The extrinsic stacking sequence based on intrinsic crystal symmetry in multilayer two-dimensional materials plays a significant role in determining their electronic and optical properties. Compared with Bernal-stacked (ABA) multilayer graphene, rhombohedral (ABC) multilayer graphene hosts stronger electron-electron interaction due to its unique dispersion at low-energy excitations and has been utiliazed as a unique platform to explore strongly correlated physics. However, discerning the stacking sequence has always been a quite time-consuming process by scanning mapping methods. Here, we report a rapid recognition method for ABC- stacked graphene with high accuracy by infrared imaging based on the distinct optical responses at infrared range. The optical contrast of the image between ABC and ABA stacked graphene is strikingly clear, and the discernibility is comparable to traditional optical Raman microscopy but with higher consistency and throughput. We further demonstrate that the infrared imaging technique can be integrated with dry transfer techniques commonly used in the community. This rapid and convenient infrared imaging technique will significantly improve the sorting efficiency for differently stacked multilayer graphene, thereby accelerating the exploration of the novel emergent correlated phenomena in ABC stacked graphene.

cond-mat.mes-hall↗

arXiv2024

Tunable Fractional Chern Insulators in Rhombohedral Graphene Superlattices

Fractional Chern insulators (FCIs) showing a transport effect with fractionally quantized Hall plateaus emerging under zero magnetic field, provide a radically new opportunity to engineer topological quantum electronics. By construction of topological flat band with moire engineering, intrinsic FCIs have been observed in twisted MoTe2 system and rhombohedral pentalayer graphene/hBN moire superlattices with anomalous Hall resistivity quantization number C <= 2/3 including the gapless composite Fermi-liquid state with C = 1/2. Here, we experimentally demonstrate a new system of rhombohedral hexalayer graphene (RHG)/hBN moire superlattices, which exhibit both integer and fractional quantum anomalous Hall effects with rich tunability including electric displacement field, perpendicular magnetic field and in-plane magnetic field. By tuning the electrical and magnetic fields at 0 < v < 1, we have observed a quantum phase transition showing a sign reversal of the Hall resistivity at finite magnetic fields. Surprisingly, the FCI state at v = 2/3 survives in the phase transitions, exhibiting a robust quantized Hall resistivity across both phases. Finally we have further demonstrated the indispensable role moire potential plays in the formation of the flat Chern band from a theoretical perspective. Our work has established RHG/hBN moire superlattices as a promising platform for exploring quasi-particles with fractional charge and non-Abelian anyons at zero magnetic field.

cond-mat.mes-hall↗

arXiv2024

Correlated Charge Density Wave Insulators in Chirally Twisted Triple Bilayer Graphene

Electrons residing in flat-band system can play a vital role in triggering spectacular phenomenology due to relatively large interactions and spontaneous breaking of different degeneracies. In this work we demonstrate chirally twisted triple bilayer graphene, a new moir\'e structure formed by three pieces of helically stacked Bernal bilayer graphene, as a highly tunable flat-band system. In addition to the correlated insulators showing at integer moir\'e fillings, commonly attributed to interaction induced symmetry broken isospin flavors in graphene, we observe abundant insulating states at half-integer moir\'e fillings, suggesting a longer-range interaction and the formation of charge density wave insulators which spontaneously break the moir\'e translation symmetry. With weak out-of-plane magnetic field applied, as observed half-integer filling states are enhanced and more quarter-integer filling states appear, pointing towards further quadrupling moir\'e unit cells. The insulating states at fractional fillings combined with Hartree-Fock calculations demonstrate the observation of a new type of correlated charge density wave insulators in graphene and points to a new accessible twist manner engineering correlated moir\'e electronics.

cond-mat.mes-hall↗