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Zuoquan Tan

Publications and source records attributed to Zuoquan Tan.

2 recordsLinked to original sources
arXiv2024

Gate Tunable Asymmetric Ozone Adsorption on Graphene

Molecular adsorption is pivotal in device fabrication and material synthesis for quantum technology. However, elucidating the behavior of physisorption poses technical challenges. Here graphene with ultrahigh sensitivity was utilized to detect ozone adsorption at cryogenic temperatures. Significant hole doping observed in graphene indicates a strong interaction between ozone and graphene. Interestingly, the adsorption exhibits asymmetry with positive and negative gate voltages. The strong affinity of ozone provides a tool to modulate materials and devices, while the gate tunability of adsorption offers new insights into construction and manipulation of oxide quantum materials.

cond-mat.mes-hall↗
arXiv2022

Direct synthesis of single-crystal bilayer graphene on dielectric substrate

The growth of high-quality Bernal-stacked bilayer graphene (BLG) directly on dielectric substrates is crucial for electronic and optoelectronic applications, but there are still challenges such as poor quality, uncontrollable thickness and polycrystalline films. In this work, a novel method to grow high-quality and single-crystalline BLG directly on various dielectric substrates (SiO2/Si, sapphire, and quartz) was demonstrated. Single-crystalline monolayer graphene was applied as a seeding layer to facilitate the homo-epitaxial synthesis of single-crystalline BLG directly on insulating substrates. The Cu nano-powders (Cu NPs) with nanostructure and high surface-area were used as the remote catalysis to provide long-lasting catalytic activity during the graphene growth. The TEM results confirm the single-crystalline nature of the BLG domains, which validates the superiority of the homo-epitaxial growth technique. The as-grown BLG show comparable quality with the CVD-grown BLG on metal surface. Field-effect transistors directly fabricated on the as-grown BLG/SiO2/Si showed a room temperature carrier mobility as high as 2297cm2/Vs.

cond-mat.mtrl-sci↗