arXiv subjects

Zuyan Xu

Publications and source records attributed to Zuyan Xu.

At least 37 records · Page 2Linked to original sources

arXiv2022

Electronic Origin of High-Tc Maximization and Persistence in Trilayer Cuprate Superconductors

In high temperature cuprate superconductors, it was found that the superconducting transition temperature Tc depends on the number of CuO2 planes (n) in the structural unit and the maximum Tc is realized in the trilayer system (n=3). It was also found that the trilayer superconductors exhibit an unusual phase diagram that Tc keeps nearly constant in the overdoped region which is in strong contrast to the Tc decrease usually found in other cuprate superconductors. The electronic origin of the Tc maximization in the trilayer superconductors and its high Tc persistence in the overdoped region remains unclear. By taking high resolution laser-based angle resolved photoemission (ARPES) measurements, here we report our revelation of the microscopic origin of the unusual superconducting properties in the trilayer superconductors. For the first time we have observed the trilayer splitting in Bi2Sr2Ca2Cu3O10+d (Bi2223) superconductor. The observed Fermi surface, band structures, superconducting gap and the selective Bogoliubov band hybridizations can be well described by a three-layer interaction model. Quantitative information of the microscopic processes involving intra- and interlayer hoppings and pairings are extracted. The electronic origin of the maximum Tc in Bi2223 and the persistence of the high Tc in the overdoped region is revealed. These results provide key insights in understanding high Tc superconductivity and pave a way to further enhance Tc in the cuprate superconductors.

cond-mat.supr-con↗

arXiv2022

Giant and Reversible Electronic Structure Evolution in a Magnetic Topological Material EuCd2As2

The electronic structure and the physical properties of quantum materials can be significantly altered by charge carrier doping and magnetic state transition. Here we report a discovery of a giant and reversible electronic structure evolution with doping in a magnetic topological material. By performing high-resolution angle-resolved photoemission measurements on EuCd2As2,we found that a huge amount of hole doping can be introduced into the sample surface due to surface absorption. The electronic structure exhibits a dramatic change with the hole doping which can not be described by a rigid band shift. Prominent band splitting is observed at high doping which corresponds to a doping-induced magnetic transition at low temperature (below -15 K) from an antiferromagnetic state to a ferromagnetic state. These results have established a detailed electronic phase diagram of EuCd2As2 where the electronic structure and the magnetic structure change systematically and dramatically with the doping level. They further suggest that the transport, magnetic and topological properties of EuCd2As2 can be greatly modified by doping. These work will stimulate further investigations to explore for new phenomena and properties in doping this magnetic topological material.

cond-mat.mtrl-sci↗

arXiv2022

Conservation of the particle-hole symmetry in the pseudogap state in optimally-doped Bi2Sr2CuO6+δ superconductor

The pseudogap state is one of the most enigmatic characteristics in the anomalous normal state properties of the high temperature cuprate superconductors. A central issue is to reveal whether there is a symmetry breaking and which symmetries are broken across the pseudogap transition. By performing high resolution laser-based angle-resolved photoemission measurements on the optimally-doped Bi2Sr1.6La0.4CuO6+δ superconductor, we report the observations of the particle-hole symmetry conservation in both the superconducting state and the pseudogap state along the entire Fermi surface. These results provide key insights in understanding the nature of the pseudogap and its relation with high temperature superconductivity.

cond-mat.supr-con↗

arXiv2022

Ubiquitous Coexisting Electron-Mode Couplings in High Temperature Cuprate Superconductors

In conventional superconductors, the electron-phonon coupling plays a dominant role in pairing the electrons and generating superconductivity. In high temperature cuprate superconductors, the existence of the electron coupling with phonons and other boson modes and its role in producing high temperature superconductivity remain unclear. The evidence of the electron-boson coupling mainly comes from the angle-resolved photoemission (ARPES) observations of the ~70meV nodal dispersion kink and the ~40meV antinodal kink. However, the reported results are sporadic and the nature of the involved bosons are still under debate. Here we report new findings of ubiquitous two coexisting electron-mode couplings in cuprate superconductors. By taking ultra-high resolution laser-based ARPES measurements, combined with the improved second derivative analysis method, we discovered that the electrons are coupled simultaneously with two sharp phonon modes with energies of ~70meV and ~40meV in different superconductors with different doping levels, over the entire momentum space and at different temperatures above and below the superconducting transition temperature. The observed electron-phonon couplings are unusual because the associated energy scales do not exhibit an obvious change across the superconducting transition. We further find that the well-known "peak-dip-hump" structure, which has long been considered as a hallmark of superconductivity, is also omnipresent and consists of finer structures that originates from electron coupling with two sharp phonon modes. These comprehensive results provide a unified picture to reconcile all the reported observations and pinpoint the origin of the electron-mode couplings in cuprate superconductors. They provide key information to understand the role of the electron-phonon coupling in generating high temperature superconductivity.

cond-mat.supr-con↗

arXiv2022

Electronic Nature of Charge Density Wave and Electron-Phonon Coupling in Kagome Superconductor KV$_3$Sb$_5$

The Kagome superconductors AV3Sb5 (A=K, Rb, Cs) have received enormous attention due to their nontrivial topological electronic structure, anomalous physical properties and superconductivity. Unconventional charge density wave (CDW) has been detected in AV3Sb5. High-precision electronic structure determination is essential to understand its origin. Here we unveil electronic nature of the CDW phase in our high-resolution angle-resolved photoemission measurements on KV3Sb5. We have observed CDW-induced Fermi surface reconstruction and the associated band folding. The CDW-induced band splitting and the associated gap opening have been revealed at the boundary of the pristine and reconstructed Brillouin zones. The Fermi surface- and momentum-dependent CDW gap is measured and the strongly anisotropic CDW gap is observed for all the V-derived Fermi surface. In particular, we have observed signatures of the electron-phonon coupling in KV3Sb5. These results provide key insights in understanding the nature of the CDW state and its interplay with superconductivity in AV3Sb5 superconductors.

cond-mat.supr-con↗

arXiv2021

Unusual Electronic Structure of Dirac Material BaMnSb$_2$ Revealed by Angle-Resolved Photoemission Spectroscopy

High resolution angle resolved photoemission measurements and band structure calculations are carried out to study the electronic structure of BaMnSb$_2$. All the observed bands are nearly linear that extend to a wide energy range. The measured Fermi surface mainly consists of one hole pocket around $Γ$ and a strong spot at Y which are formed from the crossing points of the linear bands. The measured electronic structure of BaMnSb$_2$ is unusual and deviates strongly from the band structure calculations. These results will stimulate further efforts to theoretically understand the electronic structure of BaMnSb$_2$ and search for novel properties in this Dirac material.

cond-mat.mtrl-sci↗

arXiv2021

Electronic Structure Examination on the Topological Properties of CaMnSb$_{2}$ by Angle-Resolved Photoemission Spectroscopy

We have carried out detailed high resolution ARPES measurements and band structure calculations to study the electronic structure of CaMnSb$_{2}$. The observed Fermi surface mainly consists of one hole pocket around $Γ$ point and one tiny hole pocket at Y point. Strong spectral weight accumulation along the $Γ$-X direction is observed on the hole-like Fermi surface around $Γ$ point, suggesting strong anisotropy of the density of states along the Fermi surface. The tiny hole pocket at Y point originates from an anisotropic Dirac-like band with the crossing point of the linear bands lying $\sim$ 10 meV above the Fermi level. These observations are in a good agreement with the band structure calculations. In addition, we observe additional features along the $Γ$-Y line that cannot be accounted for by the band structure calculations. Our results provide important information in understanding and exploration of novel properties in CaMnSb$_{2}$ and related materials.

cond-mat.mtrl-sci↗

arXiv2021

Common ($π$,$π$) Band Folding and Surface Reconstruction in FeAs-Based Superconductors

High resolution angle-resolved photoemission spectroscopy (ARPES) measurements are carried out on CaKFe$_4$As$_4$, KCa$_2$Fe$_4$As$_4$F$_2$ and (Ba$_{0.6}$K$_{0.4}$)Fe$_2$As$_2$ superconductors. Clear evidence of band folding between the Brillouin zone center and corners with a ($π$,$π$) wave vector has been found from the measured Fermi surface and band structures in all the three kinds of superconductors. A dominant $\sqrt{2}\,\times\,\sqrt{2}$ surface reconstruction is observed on the cleaved surface of CaKFe$_4$As$_4$ by scanning tunneling microscopy (STM) measurements. We propose that the commonly observed $\sqrt{2}\,\times\,\sqrt{2}$ reconstruction in the FeAs-based superconductors provides a general scenario to understand the origin of the ($π$,$π$) band folding. Our observations provide new insights in understanding the electronic structure and superconductivity mechanism in iron-based superconductors.

cond-mat.supr-con↗

arXiv2021

Genuine Electronic Structure and Superconducting Gap Structure in (Ba$_{0.6}$K$_{0.4}$)Fe$_{2}$As$_{2}$ Superconductor

The electronic structure and superconducting gap structure are prerequisites to establish microscopic theories in understanding the superconductivity mechanism of iron-based superconductors. However, even for the most extensively studied optimally-doped (Ba$_{0.6}$K$_{0.4}$)Fe$_2$As$_2$, there remain outstanding controversies on its electronic structure and superconducting gap structure. Here we resolve these issues by carrying out high-resolution angle-resolved photoemission spectroscopy (ARPES) measurements on the optimally-doped (Ba$_{0.6}$K$_{0.4}$)Fe$_2$As$_2$ superconductor using both Helium lamp and laser light sources. Our results indicate the "flat band" feature observed around the Brillouin zone center in the superconducting state originates from the combined effect of the superconductivity-induced band back-bending and the folding of a band from the zone corner to the center. We found direct evidence of the band folding between the zone corner and the center in both the normal and superconducting state. Our resolution of the origin of the flat band makes it possible to assign the three hole-like bands around the zone center and determine their superconducting gap correctly. Around the zone corner, we observe a tiny electron-like band and an M-shaped band simultaneously in both the normal and superconducting states. The obtained gap size for the bands around the zone corner ($\sim$5.5 meV) is significantly smaller than all the previous ARPES measurements. Our results establish a new superconducting gap structure around the zone corner and resolve a number of prominent controversies concerning the electronic structure and superconducting gap structure in the optimally-doped (Ba$_{0.6}$K$_{0.4}$)Fe$_2$As$_2$. They provide new insights in examining and establishing theories in understanding superconductivity mechanism in iron-based superconductors.

cond-mat.supr-con↗

arXiv2021

Momentum-Resolved Visualization of Electronic Evolution in Doping a Mott Insulator

High temperature superconductivity in cuprates arises from doping a parent Mott insulator by electrons or holes. A central issue is how the Mott gap evolves and the low-energy states emerge with doping. Here we report angle-resolved photoemission spectroscopy measurements on a cuprate parent compound by sequential in situ electron doping. The chemical potential jumps to the bottom of the upper Hubbard band upon a slight electron doping, making it possible to directly visualize the charge transfer band and the full Mott gap region. With increasing doping, the Mott gap rapidly collapses due to the spectral weight transfer from the charge transfer band to the gapped region and the induced low-energy states emerge in a wide energy range inside the Mott gap. These results provide key information on the electronic evolution in doping a Mott insulator and establish a basis for developing microscopic theories for cuprate superconductivity.

cond-mat.str-el↗

arXiv2021

Spectroscopic Evidence on Realization of a Genuine Topological Nodal Line Semimetal in LaSbTe

The nodal line semimetals have attracted much attention due to their unique topological electronic structure and exotic physical properties. A genuine nodal line semimetal is qualified by the presence of Dirac nodes along a line in the momentum space that are protected against the spin-orbit coupling. In addition, it requires that the Dirac points lie close to the Fermi level allowing to dictate the macroscopic physical properties. Although the material realization of nodal line semimetals have been theoretically predicted in numerous compounds, only a few of them have been experimentally verified and the realization of a genuine nodal line semimetal is particularly rare. Here we report the realization of a genuine nodal line semimetal in LaSbTe. We investigated the electronic structure of LaSbTe by band structure calculations and angle-resolved photoemission (ARPES) measurements. Taking spin-orbit coupling into account, our band structure calculations predict that a nodal line is formed in the boundary surface of the Brillouin zone which is robust and lies close to the Fermi level. The Dirac nodes along the X-R line in momentum space are directly observed in our ARPES measurements and the energies of these Dirac nodes are all close to the Fermi level. These results constitute clear evidence that LaSbTe is a genuine nodal line semimetal,providing a new platform to explore for novel phenomena and possible applications associated with the nodal line semimetals.

cond-mat.mtrl-sci↗

arXiv2020

Origin of the Electronic Structure in Single-Layer FeSe/SrTiO3 Films

The accurate theoretical description of the underlying electronic structures is essential for understanding the superconducting mechanism of iron-based superconductors. Compared to bulk FeSe, the superconducting single-layer FeSe/SrTiO3 films exhibit a distinct electronic structure consisting of only electron Fermi pockets, due to the formation of a new band gap at the Brillouin zone (BZ) corners and an indirect band gap between the BZ center and corners. Although intensive studies have been carried out, the origin of such a distinct electronic structure and its connection to bulk FeSe remain unclear. Here we report a systematic study on the temperature evolution of the electronic structure in single-layer FeSe/SrTiO3 films by angle-resolved photoemission spectroscopy. A temperature-induced electronic phase transition was clearly observed at 200 K, above which the electronic structure of single-layer FeSe/SrTiO3 films restored to that of bulk FeSe, characterized by the closing of the new band gap and the vanishing of the indirect band gap. Moreover, the interfacial charge transfer effect induced band shift of ~ 60 meV was determined for the first time. These observations not only show the first direct evidence that the electronic structure of single-layer FeSe/SrTiO3 films originates from bulk FeSe through a combined effect of an electronic phase transition and an interfacial charge transfer, but also provide a quantitative basis for theoretical models in describing the electronic structure and understanding the superconducting mechanism in single-layer FeSe/SrTiO3 films.

cond-mat.supr-con↗

arXiv2020

Spectroscopic Evidence of Superconductivity Pairing at 83 K in Single-Layer FeSe/SrTiO3 Films

Single-layer FeSe films grown on the SrTiO3 substrate (FeSe/STO) have attracted much attention because of their possible record-high superconducting critical temperature Tc and distinct electronic structures in iron-based superconductors. However, it has been under debate on how high its Tc can really reach due to the inconsistency of the results obtained from the transport, magnetic and spectroscopic measurements. Here we report spectroscopic evidence of superconductivity pairing at 83 K in single-layer FeSe/STO films. By preparing high-quality single-layer FeSe/STO films, we observe for the first time strong superconductivity-induced Bogoliubov back-bending bands that extend to rather high binding energy ~100 meV by high-resolution angle-resolved photoemission measurements. The Bogoliubov back-bending band provides a new definitive benchmark of superconductivity pairing that is directly observed up to 83 K in the single-layer FeSe/STO films. Moreover, we find that the superconductivity pairing state can be further divided into two temperature regions of 64-83 K and below 64 K. We propose the 64-83 K region may be attributed to superconductivity fluctuation while the region below 64 K corresponds to the realization of long-range superconducting phase coherence. These results indicate that either Tc as high as 83 K is achievable in iron-based superconductors, or there is a pseudogap formation from superconductivity fluctuation in single-layer FeSe/STO films.

cond-mat.supr-con↗

arXiv2020

Evidence for bosonic mode coupling in electron dynamics of LiFeAs superconductor

Super-high resolution laser-based angle-resolved photoemission measurements are carried out on LiFeAs superconductor to investigate its electron dynamics. Three energy scales at $\sim$20 meV, $\sim$34 meV and $\sim$55 meV are revealed for the first time in the electron self-energy both in the superconducting state and normal state. The $\sim$20 meV and $\sim$34 meV scales can be attributed to the coupling of electrons with sharp bosonic modes which are most likely phonons. These observations provide definitive evidence on the existence of mode coupling in iron-based superconductors.

cond-mat.supr-con↗

arXiv2020

Electronic Evolution from the Parent Mott Insulator to a Superconductor in Lightly Hole-Doped Bi2Sr2CaCu2O8+delta

High temperature superconductivity in cuprates is realized by doping the Mott insulator with charge carriers. A central issue is how such an insulating state can evolve into a conducting or superconducting state when charge carriers are introduced. Here, by in situ vacuum annealing and Rb deposition on the Bi2Sr2Ca0.6Dy0.4Cu2O8+delta (Bi2212) sample surface to push its doping level continuously from deeply underdoped (Tc=25 K, doping level p-0.066) to the near zero doping parent Mott insulator, angle-resolved photoemission spectroscopy measurements are carried out to observe the detailed electronic structure evolution in lightly hole-doped region for the first time. Our results indicate that the chemical potential lies at about 1 eV above the charge transfer band for the parent state at zero doping which is quite close to the upper Hubbard band. With increasing hole doping, the chemical potential moves continuously towards the charge transfer band and the band structure evolution exhibits a rigid band shift-like behavior. When the chemical potential approaches the charge transfer band at a doping level of -0.05, the nodal spectral weight near the Fermi level increases, followed by the emergence of the coherent quasiparticle peak and the insulator-superconductor transition. Our observations provide key insights in understanding the insulator-superconductor transition in doping the parent cuprate compound and for establishing related theories.

cond-mat.supr-con↗

arXiv2020

Direct Measurement of the Electronic Structure and band gap nature of atomic-layer-thick 2H-MoTe2

The millimeter sized monolayer and bilayer 2H-MoTe2 single crystal samples are prepared by a new mechanical exfoliation method. Based on such high-quality samples, we report the first direct electronic structure study on them, using standard high resolution angle-resolved photoemission spectroscopy (ARPES). A direct band gap of 0.924eV is found at K in the rubidium-doped monolayer MoTe2. Similar valence band alignment is also observed in bilayer MoTe2,supporting an assumption of a analogous direct gap semiconductor on it. Our measurements indicate a rather large band splitting of 212meV at the valence band maximum (VBM) in monolayer MoTe2, and the splitting is systematically enlarged with layer stacking, from monolayer to bilayer and to bulk. Meanwhile, our PBE band calculation on these materials show excellent agreement with ARPES results. Some fundamental electronic parameters are derived from the experimental and calculated electronic structures. Our findings lay a foundation for further application-related study on monolayer and bilayer MoTe2.

cond-mat.mtrl-sci↗

arXiv2020

Spectroscopic Evidence of Bilayer Splitting and Interlayer Pairing in an Iron Based Superconductor

In high temperature cuprate superconductors, the interlayer coupling between the CuO$_2$ planes plays an important role in dictating superconductivity, as indicated by the sensitive dependence of the critical temperature (T$_C$) on the number of CuO$_2$ planes in one structural unit. In Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ superconductor with two CuO$_2$ planes in one structural unit, the interaction between the two CuO$_2$ planes gives rise to band splitting into two Fermi surface sheets (bilayer splitting) that have distinct superconducting gap. The iron based superconductors are composed of stacking of the FeAs/FeSe layers; whether the interlayer coupling can cause similar band splitting and its effect on superconductivity remain unclear. Here we report high resolution laser-based angle-resolved photoemission spectroscopy (ARPES) measurements on a newly discovered iron based superconductor, KCa$_2$Fe$_4$As$_4$F$_2$ (T$_C$=33.5\,K) which consists of stacking FeAs blocks with two FeAs layers separated by insulating Ca$_2$F$_2$ blocks. Bilayer splitting effect is observed for the first time that gives rise to totally five hole-like Fermi surface sheets around the Brilliouin zone center. Band structure calculations reproduce the observed bilayer splitting by identifying interlayer interorbital interaction between the two FeAs layers within one FeAs block. All the hole-like pockets around the zone center exhibit Fermi surface-dependent and nodeless superconducting gap. The gap functions with short-range antiferromagetic fluctuations are proposed and the gap symmetry can be well understood when the interlayer pairing is considered. The particularly strong interlayer pairing is observed for one of the bands. Our observations provide key information on the interlayer coupling and interlayer pairing in understanding superconductivity in iron based superconductors.

cond-mat.supr-con↗

arXiv2019

Electronic Structure of Exfoliated Millimeter-Sized Monolayer WSe2 on Silicon Wafer

The monolayer WSe2 is interesting and important for future application in nanoelectronics, spintronics and valleytronics devices, because it has the largest spin splitting and longest valley coherence time among all the known monolayer transition-metal dichalcogenides (TMDs). To obtain the large-area monolayer TMDs' crystal is the first step to manufacture scalable and high-performance electronic devices. In this letter, we have successfully fabricated millimeter-sized monolayer WSe2 single crystals with very high quality, based on our improved mechanical exfoliation method. With such superior samples, using standard high resolution angle-resolved photoemission spectroscopy, we did comprehensive electronic band structure measurements on our monolayer WSe2. The overall band features point it to be a 1.2eV direct band gap semiconductor. Its spin-splitting of the valence band at K point is found as 460 meV, which is 30 meV less than the corresponding band splitting in its bulk counterpart. The effective hole masses of valence bands are determined as 2.344 me at Gamma, and 0.529 me as well as 0.532 me at K for the upper and lower branch of splitting bands, respectively. And screening effect from substrate is shown to substantially impact on the electronic properties. Our results provide important insights into band structure engineering in monolayer TMDs. Our monolayer WSe2 crystals may constitute a valuable device platform.

cond-mat.mes-hall↗