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and Kristian S. Thygesen

Publications and source records attributed to and Kristian S. Thygesen.

2 recordsLinked to original sources

BSE+ calculations for 2D materials: a unified description of excitons and plasmons

The Bethe-Salpeter equation (BSE) accurately describes low-energy optical spectra in materials with strong excitonic effects, but its high computational cost limits the number of electron-hole transitions that can be included. Neglecting high-energy transitions leads to an underestimation of the real part of the dielectric function, often producing a spurious plasmon peak in the BSE electron energy loss spectrum (EELS). The recently introduced BSE+ method addresses this by combining a four-point BSE-like equation for the irreducible polarisability with a two-point Dyson equation that includes the high-energy transitions at the Random Phase Approximation (RPA) level. Here, we present a detailed account of the method, extend it to two-dimensional materials, and apply it to a set of transition metal dichalcogenide monolayers. BSE+ preserves the excitonic features of the BSE at low energies while reproducing the plasmonic structure of the RPA at higher energies, yielding good agreement with experimental EELS data across the full energy range and strongly suppressing the spurious plasmon. BSE+ converges much faster than BSE with respect to the electron-hole basis size, at a comparable computational cost, and is implemented in the GPAW code.

cond-mat.mtrl-sci↗

VNCB defect as source of single photon emission from hexagonal boron nitride

Single photon emitters in 2D hexagonal boron nitride (hBN) have attracted a considerable attention because of their highly intense, stable, and strain-tunable emission. However, the precise source of this emission, in particular the detailed atomistic structure of the involved crystal defect, remains unknown. In this work, we present first-principles calculations of the vibrationally resolved optical fingerprint of the spin-triplet (2)(_^3)B_1 to (1)(_^3)B_1 transition of the VNCB point defect in hBN. Based on the excellent agreement with experiments for key spectroscopic quantities such as the emission frequency and polarization, the photoluminescence (PL) line shape, Huang-Rhys factor, Debye-Waller factor, and re-organization energy, we conclusively assign the observed single photon emission at ~2eV to the VNCB defect. Our work thereby resolves a long-standing debate about the exact chemical nature of the source of single photon emission from hBN and establishes the microscopic understanding necessary for controlling and applying such photons for quantum technological applications.

cond-mat.mtrl-sci↗