@misc{indiciae2e7ee9fad943,
  title = {High-Yield of Memory Elements from Carbon Nanotube Field-Effect Transistors with Atomic Layer Deposited Gate Dielectric},
  author = {Marcus Rinkiö and Andreas Johansson and Marina Y. Zavodchikova and J. Jussi Toppari and Albert G. Nasibulin and Esko I. Kauppinen and Päivi Törmä},
  year = {2008},
  doi = {10.1088/1367-2630/10/10/103019},
  url = {https://arxiv.org/abs/0801.2359},
  note = {Source identifier: 0801.2359}
}