@misc{indiciae102f19305144,
  title = {Nonvolatile Static Random Access Memory (NV-SRAM) Using Magnetic Tunnel Junctions with Current-Induced Magnetization Switching Architecture},
  author = {Shuu'ichirou Yamamoto and Satoshi Sugahara},
  year = {2009},
  doi = {10.1143/jjap.48.043001},
  url = {https://arxiv.org/abs/0803.3370},
  note = {Source identifier: 0803.3370}
}