@misc{indiciaebc21143573db,
  title = {Mechanism of recrystallization process in epitaxial GaN under dynamic stress field - Atomistic origin of planar defect formation},
  author = {C. R. Das and S. Dhara and H. C. Hsu and L. C. Chen and Y. R. Jeng and A. K. Bhaduri and Baldev Raj and K. H. Chen and S. K. Albert},
  year = {2009},
  doi = {10.1002/jrs.2336},
  url = {https://arxiv.org/abs/0807.0841},
  note = {Source identifier: 0807.0841}
}