TY  - RPRT
TI  - Mechanism of recrystallization process in epitaxial GaN under dynamic stress field - Atomistic origin of planar defect formation
AU  - C. R. Das
AU  - S. Dhara
AU  - H. C. Hsu
AU  - L. C. Chen
AU  - Y. R. Jeng
AU  - A. K. Bhaduri
AU  - Baldev Raj
AU  - K. H. Chen
AU  - S. K. Albert
PY  - 2009
DO  - 10.1002/jrs.2336
UR  - https://arxiv.org/abs/0807.0841
ID  - 0807.0841
ER  -