@misc{indiciae58912e4d114f,
  title = {Performance Analysis of 60nm gate length III-V InGaAs HEMTs: Simulations vs. experiments},
  author = {Neophytos Neophytou and Titash Rakshit and Mark S. Lundstrom},
  year = {2008},
  doi = {10.1109/ted.2009.2021437},
  url = {https://arxiv.org/abs/0810.1540},
  note = {Source identifier: 0810.1540}
}