@misc{indiciaebef668209117,
  title = {High-Mobility Few-Layer Graphene Field Effect Transistors Fabricated on Epitaxial Ferroelectric Gate Oxides},
  author = {X. Hong and A. Posadas and K. Zou and C. H. Ahn and J. Zhu},
  year = {2008},
  doi = {10.1103/physrevlett.102.136808},
  url = {https://arxiv.org/abs/0810.4466},
  note = {Source identifier: 0810.4466}
}