TY  - RPRT
TI  - High-Mobility Few-Layer Graphene Field Effect Transistors Fabricated on Epitaxial Ferroelectric Gate Oxides
AU  - X. Hong
AU  - A. Posadas
AU  - K. Zou
AU  - C. H. Ahn
AU  - J. Zhu
PY  - 2008
DO  - 10.1103/physrevlett.102.136808
UR  - https://arxiv.org/abs/0810.4466
ID  - 0810.4466
ER  -