@misc{indiciae51f244ef7569,
  title = {Simulation of the Spin Field Effect Transistors: Effects of Tunneling and Spin Relaxation on its Performance},
  author = {Yunfei Gao and Tony Low and Mark S. Lundstrom and Dmitri E. Nikonov},
  year = {2010},
  doi = {10.1063/1.3496666},
  url = {https://arxiv.org/abs/1002.5035},
  note = {Source identifier: 1002.5035}
}