TY  - RPRT
TI  - Properties of a radiation-induced charge multiplication region in epitaxial silicon diodes
AU  - Jörn Lange
AU  - Julian Becker
AU  - Eckhart Fretwurst
AU  - Robert Klanner
AU  - Gunnar Lindström
PY  - 2010
DO  - 10.1016/j.nima.2010.07.036
UR  - https://arxiv.org/abs/1007.4735
ID  - 1007.4735
ER  -