@misc{indiciae9f729bdfe4cc,
  title = {Detrapping and retrapping of free carriers in nominally pure single crystal GaP, GaAs and 4H-SiC semiconductors under light illumination at cryogenic temperatures},
  author = {David Mouneyrac and John G. Hartnett and Jean-Michel Le Floch and Michael E. Tobar and Dominique Cros and Jerzy Krupka},
  year = {2010},
  doi = {10.1063/1.3514009},
  url = {https://arxiv.org/abs/1010.1610},
  note = {Source identifier: 1010.1610}
}