@misc{indiciae68b20d64d639,
  title = {High growth rate 4H-SiC epitaxial growth using dichlorosilane in a hot-wall CVD reactor},
  author = {Iftekhar Chowdhury and MVS Chandrasekhar and Paul B Klein and Joshua D. Caldwell and Tangali Sudarshan},
  year = {2010},
  doi = {10.1016/j.jcrysgro.2010.11.128},
  url = {https://arxiv.org/abs/1011.1039},
  note = {Source identifier: 1011.1039}
}