TY  - RPRT
TI  - High growth rate 4H-SiC epitaxial growth using dichlorosilane in a hot-wall CVD reactor
AU  - Iftekhar Chowdhury
AU  - MVS Chandrasekhar
AU  - Paul B Klein
AU  - Joshua D. Caldwell
AU  - Tangali Sudarshan
PY  - 2010
DO  - 10.1016/j.jcrysgro.2010.11.128
UR  - https://arxiv.org/abs/1011.1039
ID  - 1011.1039
ER  -